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1. 发明授权

US09257587B2 Suspension and absorber structure for bolometer 有权
标题翻译：辐射热计的悬架和吸收结构
公开(公告)号：US09257587B2
公开(公告)日：2016-02-09
申请号：US14109929
申请日：2013-12-17
申请人： Robert Bosch GmbH
发明人： Fabian Purkl , Gary Yama , Ando Lars Feyh
IPC分类号： H01L31/101 , G01J5/20 , G01J5/08 , H01L31/0232
CPC分类号： H01L31/101 , G01J5/0853 , G01J5/20 , H01L31/02327
摘要： A semiconductor device includes a substrate having an upper surface that defines a sensing region. A fixed beam structure is supported at a first level above the sensing region. The fixed beam structure includes fixed beam supports that extend upwardly from the upper surface of the substrate to position the fixed beam structure at the first level above the sensing region. An absorber structure is supported above the fixed beam structure at a second level above the sensing region. The absorber structure includes a pillar support that extends upwardly from the fixed beam structure to position the absorber structure at the second level above the sensing region.
摘要翻译：半导体器件包括具有限定感测区域的上表面的衬底。在感测区域上方的第一级处支撑固定光束结构。固定梁结构包括从基板的上表面向上延伸的固定梁支架，以将固定梁结构定位在感测区域上方的第一水平处。吸收体结构在感测区域上方的第二级支撑在固定光束结构上方。吸收器结构包括从固定梁结构向上延伸的支柱支撑件，以将吸收体结构定位在感测区域上方的第二水平处。

2. 发明申请

US20140264955A1 ELECTRONIC DEVICE WITH AN INTERLOCKING MOLD PACKAGE 有权
标题翻译：具有互连模具包的电子设备
公开(公告)号：US20140264955A1
公开(公告)日：2014-09-18
申请号：US14203012
申请日：2014-03-10
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Gary O'Brien , Andrew Graham
IPC分类号： H01L23/31 , H01L21/56
CPC分类号： H01L23/3142 , B81B7/0077 , B81C2203/0154 , B81C2203/0163 , H01L21/56 , H01L21/565 , H01L23/3121 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： An electronic device includes a mold package which encapsulates a portion of the electronic device and does not encapsulate another portion of the electronic device to enable a sensing portion of the electronic device to be exposed to a condition to be sensed. In an electronic sensing device having a sensor formed by a substrate such as silicon, a sensor area is not encapsulated, but areas surrounding the sensor area are encapsulated. The area surrounding the sensor area includes one or more trenches or interlock structures formed in the surrounding substrate which receives the mold material to provide an interlock feature. The interlock feature reduces or substantially prevents the mold from delaminating at an interface of the mold and the substrate.
摘要翻译：电子设备包括：模具包装，其封装电子设备的一部分，并且不封装电子设备的另一部分，以使电子设备的感测部分能够暴露于待感测的状态。在具有由诸如硅的基板形成的传感器的电子感测装置中，传感器区域不被封装，而是封装传感器区域周围的区域。围绕传感器区域的区域包括形成在周围基底中的一个或多个沟槽或互锁结构，其接收模具材料以提供互锁特征。互锁特征减少或基本上防止模具在模具和基底的界面处分层。

3. 发明授权

US09159637B2 Electronic device with an interlocking mold package 有权
标题翻译：具有互锁模具包装的电子装置
公开(公告)号：US09159637B2
公开(公告)日：2015-10-13
申请号：US14203012
申请日：2014-03-10
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Gary O'Brien , Andrew Graham
IPC分类号： H01L23/31 , H01L21/56 , B81B7/00
CPC分类号： H01L23/3142 , B81B7/0077 , B81C2203/0154 , B81C2203/0163 , H01L21/56 , H01L21/565 , H01L23/3121 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： An electronic device includes a mold package which encapsulates a portion of the electronic device and does not encapsulate another portion of the electronic device to enable a sensing portion of the electronic device to be exposed to a condition to be sensed. In an electronic sensing device having a sensor formed by a substrate such as silicon, a sensor area is not encapsulated, but areas surrounding the sensor area are encapsulated. The area surrounding the sensor area includes one or more trenches or interlock structures formed in the surrounding substrate which receives the mold material to provide an interlock feature. The interlock feature reduces or substantially prevents the mold from delaminating at an interface of the mold and the substrate.
摘要翻译：电子设备包括：模具包装，其封装电子设备的一部分，并且不封装电子设备的另一部分，以使电子设备的感测部分能够暴露于待感测的状态。在具有由诸如硅的基板形成的传感器的电子感测装置中，传感器区域不被封装，而是封装传感器区域周围的区域。围绕传感器区域的区域包括形成在周围基底中的一个或多个沟槽或互锁结构，其接收模具材料以提供互锁特征。互锁特征减少或基本上防止模具在模具和基底的界面处分层。

4. 发明授权

US09093594B2 Multi-stack film bolometer 有权
标题翻译：多层薄膜辐射热量计
公开(公告)号：US09093594B2
公开(公告)日：2015-07-28
申请号：US14054923
申请日：2013-10-16
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Po-Jui Chen , Fabian Purkl , Gary Yama , Gary O'Brien
IPC分类号： G01J5/20 , H01L31/09 , H01L37/02 , G01J5/02 , G01J5/10 , G01J5/08
CPC分类号： H01L31/09 , G01J5/024 , G01J5/0853 , G01J5/10 , G01J5/20 , H01L37/02
摘要： A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less.
摘要翻译：半导体器件包括衬底，从衬底的上表面延伸的悬浮结构以及通过悬挂结构附接到衬底的吸收体堆叠。悬架结构将吸收体堆叠物悬挂在衬底上，使得在吸收体堆叠和衬底之间限定间隙。吸收体堆叠包括与多个绝缘层交错的多个金属化层。至少一层金属化层的厚度约为10nm以下。

5. 发明申请

US20140264781A1 PASSIVATION LAYER FOR HARSH ENVIRONMENTS AND METHODS OF FABRICATION THEREOF 有权
标题翻译：哈桑环境的钝化层及其制造方法
公开(公告)号：US20140264781A1
公开(公告)日：2014-09-18
申请号：US14201247
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Fabian Purkl , Andrew Graham , Gary Yama
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： B81C1/00809 , B81C2201/016 , H01L21/02601 , H01L23/3192 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al2O3) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.
摘要翻译：一种制造用于电子设备的钝化层和钝化层的方法。钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。附加层由交替的膜层和纳米颗粒层形成。所得到的钝化层提供了一种具有高膜质量的薄且坚固的钝化层，以保护电子设备，部件和系统免受破坏性环境条件的影响。

6. 发明申请

US20140090485A1 MEMS Pressure Sensor Assembly 审中-公开
标题翻译： MEMS压力传感器组件
公开(公告)号：US20140090485A1
公开(公告)日：2014-04-03
申请号：US13633619
申请日：2012-10-02
申请人： ROBERT BOSCH GMBH
发明人： Ando Lars Feyh , Gary O'Brien
IPC分类号： G01L1/20
CPC分类号： G01L19/148 , B81B2201/0264 , B81C1/00238 , B81C2203/0792 , G01L9/0073 , G01L19/0061
摘要： A pressure sensor assembly includes a first die assembly, a second die assembly, and a conducting member. The first die assembly includes a MEMS pressure sensor. The second die assembly includes an ASIC configured to generate an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. The conducting member is positioned between the first die assembly and the second die assembly and is configured and to electrically connect the MEMS pressure sensor to the ASIC.
摘要翻译：压力传感器组件包括第一模具组件，第二模具组件和导电构件。第一模具组件包括MEMS压力传感器。第二管芯组件包括被配置为产生对应于由MEMS压力传感器感测的压力的电输出的ASIC。导电构件定位在第一模具组件和第二模具组件之间，并且被配置并将MEMS压力传感器电连接到ASIC。

7. 发明授权

US09255000B2 CMOS integrated moving-gate transducer with silicon as a functional layer 有权
标题翻译： CMOS集成式移动栅极换能器，以硅为功能层
公开(公告)号：US09255000B2
公开(公告)日：2016-02-09
申请号：US14108901
申请日：2013-12-17
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Po-Jui Chen , Markus Ulm
IPC分类号： H01L29/84 , H01L21/50 , B81C1/00 , B81B3/00 , B81B7/00 , H01L29/772 , H01L21/02 , H01L21/58
CPC分类号： B81B3/0021 , B81B2201/0221 , B81B2201/0228 , B81C1/00134 , B81C1/00246 , B81C2203/0771
摘要： A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.
摘要翻译：半导体器件包括衬底，位于衬底上方的第一介电层，移动栅极换能器和校验块。移动栅极换能器至少部分地形成在衬底内并且至少部分地形成在第一介电层内。检测质量包括第一电介质层的一部分和硅层的一部分。硅层位于第一介电层的上方。

8. 发明授权

US09233842B2 Passivation layer for harsh environments and methods of fabrication thereof 有权
标题翻译：用于恶劣环境的钝化层及其制造方法
公开(公告)号：US09233842B2
公开(公告)日：2016-01-12
申请号：US14201247
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Fabian Purkl , Andrew Graham , Gary Yama
IPC分类号： H01L21/31 , B81C1/00 , H01L23/31 , H01L21/314 , H01L45/00 , H01L21/02
CPC分类号： B81C1/00809 , B81C2201/016 , H01L21/02601 , H01L23/3192 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al2O3) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.
摘要翻译：一种制造用于电子设备的钝化层和钝化层的方法。钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。附加层由交替的膜层和纳米颗粒层形成。所得到的钝化层提供了一种具有高膜质量的薄且坚固的钝化层，以保护电子设备，部件和系统免受破坏性环境条件的影响。

9. 发明授权

US09130081B2 Bolometer having absorber with pillar structure for thermal shorting 有权
标题翻译：热分解器具有用于热短路的柱结构的吸收器
公开(公告)号：US09130081B2
公开(公告)日：2015-09-08
申请号：US14109936
申请日：2013-12-17
申请人： Robert Bosch GmbH
发明人： Gary Yama , Fabian Purkl , Ando Lars Feyh
IPC分类号： G01J5/20 , H01L31/0248 , H01L31/18 , G01J5/02 , H01L31/09
CPC分类号： H01L31/0248 , G01J5/024 , G01J5/0245 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition.
摘要翻译：半导体器件包括具有电极结构的衬底。吸收体结构悬挂在电极结构上并与第一电极结构隔开第一距离。所述吸收体结构包括：i）从所述衬底向上延伸并与读出导体电连接的悬挂结构，以及ii）从所述吸收体结构朝向所述第一电极结构向下延伸的柱结构。柱结构具有位于距离第一电极结构第二距离的接触部分，第二距离小于第一距离。吸收体结构被配置成在测试条件下朝向衬底弯曲。选择第二距离，使得当吸收体结构根据测试条件弯曲时，柱结构的接触部分定位成与第一电极结构接触。

10. 发明申请

US20140264900A1 ANISOTROPIC CONDUCTOR AND METHOD OF FABRICATION THEREOF 有权
标题翻译：各向异性导体及其制造方法
公开(公告)号：US20140264900A1
公开(公告)日：2014-09-18
申请号：US14200991
申请日：2014-03-07
申请人： Robert Bosch GmbH
发明人： Ando Lars Feyh , Fabian Purkl , Ashwin K. Samarao , Gary Yama , Gary O'Brien
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00095 , B81B7/0006 , B82Y10/00 , B82Y30/00 , H01L21/02601 , H01L21/3142 , H01L45/146
摘要： An anisotropic conductor and a method of fabrication thereof. The anisotropic conductor includes an insulating matrix and a plurality of nanoparticles disposed therein. A first portion of the plurality of nanoparticles provides a conductor when subjected to a voltage and/or current pulse. A second portion of the plurality of the nanoparticles does not form a conductor when the voltage and or current pulse is applied to the first portion. The anisotropic conductor forms a conductive path between conductors of electronic devices, components, and systems, including microelectromechanical systems (MEMS) devices, components, and systems.
摘要翻译：各向异性导体及其制造方法。各向异性导体包括绝缘基体和设置在其中的多个纳米颗粒。多个纳米颗粒的第一部分在经受电压和/或电流脉冲时提供导体。当电压和/或电流脉冲施加到第一部分时，多个纳米颗粒的第二部分不形成导体。各向异性导体在电子器件，部件和系统的导体之间形成导电路径，包括微机电系统（MEMS）器件，部件和系统。

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