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    • 1. 发明授权
    • Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
    • 使用含卤素等离子体对氟化钙材料进行脱羟基化和纯化
    • US06982001B2
    • 2006-01-03
    • US10856633
    • 2004-05-28
    • Robert A. BellmanDana C. BookbinderKishor P. GadkareeCynthia B. Giroux
    • Robert A. BellmanDana C. BookbinderKishor P. GadkareeCynthia B. Giroux
    • C30B11/00C30B11/12
    • C01B9/08C01F11/22C30B11/00C30B29/12
    • The invention is directed to a process of purifying metal fluoride materials used to make metal fluoride single crystals suitable for making optical elements used in the transmission of wavelengths below 200 nm, and in particular to a process of purifying such materials by the use of a halogen containing plasma to convert metal oxygenates contaminating the feedstocks used in the preparation of the crystals to metal fluorides. The invention also is directed to a process of growing a metal fluoride single crystal using a crystal growth furnace to carry out the foregoing purification procedure followed by the steps of melting the purified material and cooling it using s selected time and temperature cycle to from a metal fluoride single crystal. The plasmas used in practicing the invention can be derived from a variety of halogenated materials including, for example, fluorocarbons, chlorocarbons, boron trihalides, chlorine, fluorine, xenon difluoride and other gaseous or easily volatilized halogenated substances known in the art.
    • 本发明涉及一种净化金属氟化物材料的方法,所述金属氟化物材料用于制备适于制造用于波长低于200nm的透射体的光学元件的金属氟化物单晶,并且特别涉及一种通过使用卤素 将等离子体转化成金属氧化物,将用于制备晶体的原料污染成金属氟化物。 本发明还涉及使用晶体生长炉生长金属氟化物单晶的方法,以执行上述纯化程序,然后是将精制材料熔化并使用选定的时间和温度循环冷却至金属 氟化物单晶。 用于实施本发明的等离子体可以衍生自各种卤化物质,包括例如碳氟化合物,氯代烃,三卤化硼,氯,氟,氙二氟化物以及本领域已知的其它气态或易挥发的卤化物质。
    • 9. 发明授权
    • High germanium content waveguide materials
    • 高锗含量波导材料
    • US06768856B2
    • 2004-07-27
    • US09917039
    • 2001-07-27
    • Ikerionwu A. AkwaniRobert A. BellmanLynn B. Simpson
    • Ikerionwu A. AkwaniRobert A. BellmanLynn B. Simpson
    • G02B610
    • G02F1/1326C03C3/076C03C3/111G02B6/132G02B2006/12145
    • Germanium-silicon oxide, germanium-silicon oxynitride and silica-germania-titania materials and oxynitride materials suitable for fabricating optical waveguides for liquid crystal based cross-connect optical switching devices have a refractive index of from about 1.48 to about 1.52 at 1550 nm, and a coefficient of thermal expansion at room temperature of from about 3×10−6° C.−1 to about 4.4×10−6° C.−1. The compositions are adjusted so that the refractive index of the germanium-silicon oxide, germanium-silicon oxynitride or silica-germania-titania material is closely matched to the refractive index of a typical liquid crystal material whereby improved optical performance of a liquid crystal based cross-connect optical switching device is achieved. The coefficient of thermal expansion of the germanium-silicon oxide, germanium-silicon oxynitride, or silica-germania-titania material is closely matched to the coefficient of thermal expansion of silicon, whereby strain induced birefringence caused by thermal stresses is reduced or avoided.
    • 锗 - 氧化硅,锗硅氮氧化物和二氧化硅 - 二氧化锗 - 二氧化钛材料和适用于制造用于液晶的交叉连接光开关器件的光波导的氧氮化物材料在1550nm具有约1.48至约1.52的折射率,以及 在室温下的热膨胀系数为约3×10 -6℃至约4.4×10 -6℃。 调整组合物使得锗 - 氧化硅,锗 - 氮氧化硅或二氧化硅 - 二氧化锗 - 二氧化钛材料的折射率与典型液晶材料的折射率紧密匹配,从而改善了基于液晶的交叉的光学性能 实现了连接光开关器件。 锗 - 硅氧化物,锗 - 氮氧化硅或二氧化硅 - 二氧化锗 - 二氧化钛材料的热膨胀系数与硅的热膨胀系数紧密匹配,从而降低或避免了由热应力引起的应变引起的双折射。