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    • 1. 发明申请
    • PATTERN INSPECTION APPARATUS
    • 图案检查装置
    • US20120081538A1
    • 2012-04-05
    • US13242655
    • 2011-09-23
    • Riki OgawaMasatoshi HironoTakeshi NishizakaRyoichi HiranoIkunao IsomuraKazuto MatsukiFumio Ozaki
    • Riki OgawaMasatoshi HironoTakeshi NishizakaRyoichi HiranoIkunao IsomuraKazuto MatsukiFumio Ozaki
    • H04N7/18
    • G01N21/956
    • This pattern inspection apparatus includes an inspection region information storage unit that stores an inspection region specified in a pattern region, a pattern surface height detection unit that detects a pattern surface height signal corresponding to a pattern surface height measurement position on the inspection sample, an autofocus mechanism that focuses on the inspection sample using the pattern surface height signal detected by the pattern surface height detection unit, a determination unit, and an autofocus mechanism control unit. When the determination unit determines that the pattern surface height measurement position is located within the inspection region, the autofocus mechanism control unit drives the autofocus mechanism, and the determination unit determines that the pattern surface height measurement position is not located within the inspection region, the autofocus mechanism control unit stops the autofocus mechanism.
    • 该图案检查装置包括:检查区域信息存储单元,其存储在图案区域中指定的检查区域;图案表面高度检测单元,其检测与检查样品上的图案表面高度测量位置对应的图案表面高度信号;自动对焦 使用由图案表面高度检测单元,确定单元和自动对焦机构控制单元检测到的图案表面高度信号来关注检查样本的机构。 当确定单元确定图案表面高度测量位置位于检查区域内时,自动聚焦机构控制单元驱动自动聚焦机构,并且确定单元确定图案表面高度测量位置不位于检查区域内, 自动对焦机构控制单元停止自动对焦机构。
    • 4. 发明授权
    • Photomask inspection method
    • 光掩模检查方法
    • US08229206B2
    • 2012-07-24
    • US12546963
    • 2009-08-25
    • Masatoshi Hirono
    • Masatoshi Hirono
    • G06K9/00G01N21/00G01N21/86G01V8/00
    • G06T7/0004G06T2207/10056G06T2207/30148
    • A photomask inspection method that identifies a foreign particle such as dirt on a photomask with high sensitivity by suppressing erroneous identification due to an influence of noise is provided. The photomask inspection method includes acquiring image data of a photomask having regions with different layer structures on a surface thereof, creating inverted image data by subtracting the image data from pixel value data of the regions, creating offset inverted image data by raising pixel values of the inverted image data by a fixed amount, creating normalized correlation image data by computing a normalized correlation of the offset inverted image data and an offset Gaussian distribution-type kernel, and identifying foreign particles by comparing the normalized correlation image data and a predetermined threshold.
    • 提供了一种光掩模检查方法,其通过抑制由于噪声的影响而导致的错误识别,以高灵敏度识别光掩模上的杂质等杂质。 光掩模检查方法包括获取具有在其表面上具有不同层结构的区域的光掩模的图像数据,通过从区域的像素值数据中减去图像数据来产生反转的图像数据,通过提高偏移反转的图像数据, 反转图像数据固定量,通过计算偏移反转图像数据和偏移高斯分布型核心的归一化相关性,通过比较归一化相关图像数据和预定阈值来识别外来粒子,从而产生归一化相关图像数据。
    • 7. 发明授权
    • Mask blank for EUV exposure and mask for EUV exposure
    • EUV暴露的掩护空白和EUV暴露的掩码
    • US07935460B2
    • 2011-05-03
    • US12209380
    • 2008-09-12
    • Masatoshi Hirono
    • Masatoshi Hirono
    • G03F1/00B32B17/10
    • G03F1/24B82Y10/00B82Y40/00Y10T428/31616
    • Provided are a mask for EUV exposure and a mask blank for EUV exposure for manufacturing the same, so as to improve the contrast of ultraviolet inspection light and improve the inspection performance for the mask. This mask blank for EUV exposure includes a substrate, a reflecting layer which is provided on the substrate and reflects EUV light, and an absorbent layer which is provided on the reflecting layer and absorbs EUV light. Reflectance of light at a wavelength between 150 nm and 300 nm is greater at the absorbent layer than that of the reflecting layer. The mask for EUV exposure can be manufactured by processing this mask blank for EUV exposure.
    • 提供用于EUV曝光的掩模和用于制造EUV曝光的掩模板,以提高紫外线检查光的对比度并提高掩模的检查性能。 用于EUV曝光的掩模空白包括基板,设置在基板上并反射EUV光的反射层,以及设置在反射层上并吸收EUV光的吸收层。 在吸收层处,150nm至300nm波长处的光的反射率大于反射层的反射率。 用于EUV曝光的掩模可以通过处理该掩模空白来进行EUV曝光来制造。