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1. 发明授权

US06344363B1 Method of making ferroelectric film with protective cover film against hydrogen and moisture 失效
标题翻译：制造具有保护性覆膜的铁电体膜防止氢气和水分的方法
公开(公告)号：US06344363B1
公开(公告)日：2002-02-05
申请号：US09143099
申请日：1998-08-28
申请人： Rika Shinohara , Atsuhiro Tsukune , Hiroshi Kudo
发明人： Rika Shinohara , Atsuhiro Tsukune , Hiroshi Kudo
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , C23C16/401 , C23C16/402 , C23C16/511 , H01L21/02131 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/31629 , H01L28/55
摘要： A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.
摘要翻译：在下层基板的主面上形成铁电体膜。通过使用高密度等离子体的气相沉积，沉积绝缘保护膜，以便将铁电体膜覆盖。沉积的保护膜可以防止铁电体膜劣化。

2. 发明授权

US08836126B2 Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese 有权
标题翻译：具有包含氧的绝缘层和含有锰的阻挡层的半导体器件
公开(公告)号：US08836126B2
公开(公告)日：2014-09-16
申请号：US12535489
申请日：2009-08-04
申请人： Hirosato Ochimizu , Atsuhiro Tsukune , Hiroshi Kudo
发明人： Hirosato Ochimizu , Atsuhiro Tsukune , Hiroshi Kudo
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L21/768 , H01L23/528
CPC分类号： H01L21/76807 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76879 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2224/05149 , H01L2224/05649 , H01L2224/29149 , H01L2224/29649 , H01L2224/80449 , H01L2224/81449 , H01L2224/83449 , H01L2224/84449 , H01L2224/85449 , H01L2924/0002 , H01L2924/01025 , H01L2924/00
摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要翻译：半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线，所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

3. 发明申请

US20100038792A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100038792A1
公开(公告)日：2010-02-18
申请号：US12535489
申请日：2009-08-04
申请人： Hirosato OCHIMIZU , Atsuhiro Tsukune , Hiroshi Kudo
发明人： Hirosato OCHIMIZU , Atsuhiro Tsukune , Hiroshi Kudo
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76807 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76879 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2224/05149 , H01L2224/05649 , H01L2224/29149 , H01L2224/29649 , H01L2224/80449 , H01L2224/81449 , H01L2224/83449 , H01L2224/84449 , H01L2224/85449 , H01L2924/0002 , H01L2924/01025 , H01L2924/00
摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要翻译：半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线，所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

4. 发明授权

US06448666B1 Semiconductor device and method for forming insulating film 有权
标题翻译：用于形成绝缘膜的半导体器件和方法
公开(公告)号：US06448666B1
公开(公告)日：2002-09-10
申请号：US09389009
申请日：1999-09-02
申请人： Hiroshi Kudo , Rika Shinohara
发明人： Hiroshi Kudo , Rika Shinohara
IPC分类号： H01K2100
CPC分类号： H01L21/0212 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31629
摘要： The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm3.
摘要翻译：本发明涉及一种形成具有低相对介电常数的绝缘膜的方法。一种用于形成等离子体化学气相沉积的绝缘膜的方法，其特征在于，使用Si供应气体，供氧气体和氟供应气体来形成所述绝缘膜，并且所述绝缘膜是在所形成的绝缘膜的密度等于或大于2.25g / cm 3的成膜条件下形成。

5. 发明授权

US6037274A Method for forming insulating film 失效
标题翻译：绝缘膜的形成方法
公开(公告)号：US6037274A
公开(公告)日：2000-03-14
申请号：US597879
申请日：1996-02-07
申请人： Hiroshi Kudo , Rika Shinohara
发明人： Hiroshi Kudo , Rika Shinohara
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316
CPC分类号： H01L21/0212 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31629
摘要： The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm.sup.3.
摘要翻译：本发明涉及一种形成具有低相对介电常数的绝缘膜的方法。一种用于形成等离子体化学气相沉积的绝缘膜的方法，其特征在于，使用Si供应气体，供氧气体和氟供应气体来形成所述绝缘膜，并且所述绝缘膜是在所形成的绝缘膜的密度等于或大于2.25g / cm 3的成膜条件下形成。

6. 发明授权

US08067791B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08067791B2
公开(公告)日：2011-11-29
申请号：US12621106
申请日：2009-11-18
申请人： Hiroshi Kudo , Junko Naganuma , Sadahiro Kishii
发明人： Hiroshi Kudo , Junko Naganuma , Sadahiro Kishii
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823835 , H01L21/823842 , H01L29/4966 , H01L29/66545 , H01L29/66606
摘要： A semiconductor device formed by the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.
摘要翻译：一种半导体器件，通过以下步骤形成：形成虚拟电极22n和虚拟电极22p; 在虚拟电极22p上形成金属膜32; 在第一温度进行热处理以用包含金属膜32的构成材料的材料的电极34a代替虚设电极22n; 在虚拟电极22n上形成金属膜36; 并且在低于第一温度的第二温度下进行热处理，并且在电极34a与金属膜36之间的构成材料不发生相互扩散的情况下，用第二虚拟电极用电极34b 含有金属膜36的构成材料的材料。

7. 发明授权

US07163887B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07163887B2
公开(公告)日：2007-01-16
申请号：US10924847
申请日：2004-08-25
申请人： Hiroshi Kudo , Koichiro Inazawa
发明人： Hiroshi Kudo , Koichiro Inazawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/31138 , H01L21/76807
摘要： A method for fabricating a semiconductor device that prevents the occurrence of bowing and thickness reduction in a dual damascene method. As shown in FIG. 2(B), silicon nitride etching is performed on a semiconductor device in process of fabrication which has a section shown in FIG. 2(A). As a result, part of a copper film is oxidized and changes into oxide. Moreover, a CFx deposit is formed on it. By performing organic insulating film etching by the use of hydrogen plasma in FIG. 2(C), however, the oxide is deoxidized to copper and the CFx deposit is converted into a volatile compound and is removed.
摘要翻译：一种制造半导体器件的方法，该半导体器件防止在双镶嵌方法中产生弯曲和厚度减小。如图所示。如图2（B）所示，在具有图2所示部分的制造工艺中对半导体器件进行氮化硅蚀刻。 2（A）。结果，部分铜膜被氧化并变成氧化物。此外，在其上形成CF x x沉积物。通过在图1中使用氢等离子体进行有机绝缘膜蚀刻。然而，如图2（C）所示，氧化物脱氧成铜，将CF>矿沉积物转化为挥发性化合物并除去。

8. 发明授权

US5495255A FM radar system 失效
公开(公告)号：US5495255A
公开(公告)日：1996-02-27
申请号：US147461
申请日：1993-11-02
申请人： Satoru Komatsu , Hiroshi Kudo
发明人： Satoru Komatsu , Hiroshi Kudo
IPC分类号： G01S7/02 , G01S7/03 , G01S7/28 , G01S13/34 , G01S13/87 , G01S13/93 , H01Q1/24 , H01Q1/32 , H01Q1/52 , H01Q3/24 , H01Q21/06 , H01Q23/00
CPC分类号： H01Q23/00 , G01S13/34 , G01S13/87 , G01S7/032 , H01Q1/247 , H01Q1/3233 , H01Q1/525 , H01Q21/065 , H01Q3/24 , H01Q3/245 , G01S13/931 , G01S2013/9375 , G01S2013/9378 , G01S2013/9385
摘要： An FM radar system of more simple construction, smaller size, lower cost and improved performance is provided in which circulators of any type in the prior art are eliminated by constructing a transceiver comprised of a transmitting part and a receiving part, each formed on a common dielectric plate and having a dedicated transmitting antenna and a dedicated receiving antenna respectively. The antennas comprise planar array antennas, in contrast to the solid antennas used in prior art systems. The planar array antennas are also formed on the single dielectric plate. The transmitting part comprises a plurality of transmission antennas and a plurality of frequency multipliers coupled to said transmission antennas. The receiving part comprises a plurality of receiving antennas which are coupled to a plurality of switches through a plurality of mixers, frequency multipliers, and low noise amplifiers.

9. 发明授权

US07679144B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07679144B2
公开(公告)日：2010-03-16
申请号：US11938441
申请日：2007-11-12
申请人： Hiroshi Kudo , Kenji Ishikawa
发明人： Hiroshi Kudo , Kenji Ishikawa
IPC分类号： H01L27/088 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1104 , H01L23/485 , H01L27/0207 , H01L27/11 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes a silicon substrate, a device isolation insulating film dividing an active region of the silicon substrate into plural pieces, a gate electrode formed on the active region, a source/drain region which is formed in the active region on both sides of the gate electrode, and which constitutes a MOS transistor of an SRAM memory cell with the gate electrode, an interlayer insulating film formed over each of the active region and the device isolation insulating film, a first hole which is formed in the interlayer isolation insulating film, and which commonly overlaps with two adjacent active regions and the device isolation insulating film between the active regions, and a first conductive plug which is formed in the first hole, and which electrically connects the two active regions.
摘要翻译：半导体器件包括硅衬底，将硅衬底的有源区分成多个部件的器件隔离绝缘膜，形成在有源区上的栅电极，形成在有源区的两侧的有源区中的源/漏区并且构成具有栅电极的SRAM存储单元的MOS晶体管，形成在有源区和器件隔离绝缘膜之上的层间绝缘膜，形成在层间隔离绝缘膜中的第一孔并且其通常与有源区域之间的两个相邻的有源区和器件隔离绝缘膜重叠，并且形成在第一孔中并且电连接两个有源区的第一导电插塞。

10. 外观设计

USD580540S1 Range hood 有权
公开(公告)号：USD580540S1
公开(公告)日：2008-11-11
申请号：US29306495
申请日：2008-04-10
申请人： Hiroshi Kudo
设计人： Hiroshi Kudo

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