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    • 2. 发明授权
    • Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
    • 具有隔离气体连接器的反应器和用于将材料沉积到微器件工件上的方法
    • US07588804B2
    • 2009-09-15
    • US10922039
    • 2004-08-19
    • Ross S. Dando
    • Ross S. Dando
    • C23C16/455C23C16/44C23C16/22C23C16/30
    • C23C16/4409C23C16/455C23C16/45561
    • Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reaction chamber, a lid attachable to the reaction chamber, and a connector. The connector has a first portion coupled to the lid, a second portion coupled to the reaction chamber, a gas passageway extending through the first and second portions, and a seal. The seal can surround the gas passageway between the first and second portions. The first portion is detachably coupled to the second portion. In one aspect of this embodiment, the connector can also include a second gas passageway extending through the first and second portions and a second seal surrounding the second gas passageway between the first and second portions.
    • 具有隔离气体连接器的反应器,包括这种反应器的系统以及用于将材料沉积到微器件工件上的方法在本文中公开。 在一个实施例中,用于将材料沉积到微器件工件上的反应器包括反应室,可附接到反应室的盖和连接器。 连接器具有联接到盖的第一部分,耦合到反应室的第二部分,延伸穿过第一和第二部分的气体通道和密封件。 密封件可围绕第一和第二部分之间的气体通道。 第一部分可拆卸地联接到第二部分。 在该实施例的一个方面,连接器还可以包括延伸穿过第一和第二部分的第二气体通道和围绕第一和第二部分之间的第二气体通道的第二密封件。
    • 5. 发明授权
    • Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
    • 具有隔离气体连接器的反应器和用于将材料沉积到微器件工件上的方法
    • US06926775B2
    • 2005-08-09
    • US10365085
    • 2003-02-11
    • Craig M. CarpenterRoss S. DandoDanny Dynka
    • Craig M. CarpenterRoss S. DandoDanny Dynka
    • C23C16/44C23C16/455C23C16/54C23C16/00
    • C23C16/54C23C16/4401C23C16/45519C23C16/45544
    • Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.
    • 具有用于将材料沉积到微器件工件上的气体分配器的反应器,包括这种反应器的系统以及将材料沉积到微器件工件上的方法在本文中公开。 在一个实施例中,用于将材料沉积到微器件工件上的反应器包括反应室,通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。
    • 6. 发明授权
    • Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
    • 用于在将材料沉积到微器件工件上的过程中控制气体脉动的方法
    • US06838114B2
    • 2005-01-04
    • US10155547
    • 2002-05-24
    • Craig M. CarpenterRoss S. DandoAllen P. Mardian
    • Craig M. CarpenterRoss S. DandoAllen P. Mardian
    • C23C16/44C23C16/455C23C16/52C23C16/00
    • C23C16/45525C23C16/52
    • Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.
    • 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动,以将第一前体沉积在反应室中的微器件工件上,并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时,通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。