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1. 发明授权

US06800172B2 INTERFACIAL STRUCTURE FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND SUBSTRATE TRANSFER CHAMBERS AND FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND ACCESSORY ATTACHMENTS, AND SEMICONDUCTOR SUBSTRATE PROCESSOR 失效
标题翻译：半导体基板加工板和基板转移板和半导体基板加工板和附件附件的界面结构以及半导体基板处理器
公开(公告)号：US06800172B2
公开(公告)日：2004-10-05
申请号：US10082599
申请日：2002-02-22
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23F100
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

2. 发明授权

US06821347B2 Apparatus and method for depositing materials onto microelectronic workpieces 失效
公开(公告)号：US06821347B2
公开(公告)日：2004-11-23
申请号：US10191889
申请日：2002-07-08
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： B05C318
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

3. 发明授权

US07387685B2 Apparatus and method for depositing materials onto microelectronic workpieces 失效
标题翻译：将材料沉积到微电子工件上的装置和方法
公开(公告)号：US07387685B2
公开(公告)日：2008-06-17
申请号：US10933604
申请日：2004-09-02
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： C23C16/455 , C23C16/00 , H01L21/3065
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
摘要翻译：用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。反应室可以包括入口和出口。气体分配器位于反应室中。气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。通道从第一表面延伸穿过分配器板到第二表面。此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

4. 发明授权

US07192487B2 Semiconductor substrate processing chamber and accessory attachment interfacial structure 失效
标题翻译：半导体衬底处理室和附件附件界面结构
公开(公告)号：US07192487B2
公开(公告)日：2007-03-20
申请号：US10695727
申请日：2003-10-28
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23C16/00 , C23F1/00 , H01L21/301
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

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