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    • 2. 发明授权
    • Insulation displacement electrical connector with improved strain relief
    • 绝缘位移电连接器,具有改善的应力消除
    • US5586905A
    • 1996-12-24
    • US146384
    • 1993-11-01
    • Robert C. MarshallFrank Pansari, Jr.
    • Robert C. MarshallFrank Pansari, Jr.
    • H01R4/24H01R13/58
    • H01R4/2454H01R4/2433
    • An electrical connector assembly is provided for terminating an insulated electrical wire. The assembly includes a housing having a wire-receiving opening adapted to receive the insulated electrical wire. The housing is defined by two housing halves which are relatively movable between an open condition for insertion of an insulated wire into the opening and a closed condition. A terminal is mounted on the housing and has an insulation displacement slot positioned in the opening adapted to displace the insulation of the wire and electrically engage an inner conductor of the wire. Opposing flexible portions of the housing halves provide strain relief to the insulated electrical wire by gripping the wire substantially entirely thereabout when the housing halves are in their closed condition.
    • 提供电连接器组件用于终止绝缘电线。 组件包括具有适于容纳绝缘电线的线接收开口的壳体。 壳体由两个壳体半部限定,两个半壳体在用于将绝缘电线插入开口的打开状态和闭合状态之间可相对移动。 端子安装在壳体上,并且具有定位在开口中的绝缘移动槽,其适于移动线的绝缘并电连接导线的内导体。 外壳半部的相对的柔性部分通过在外壳半部处于其闭合状态时基本上完全夹紧导线来为绝缘电线提供应变消除。
    • 4. 发明授权
    • Technique for the growth of compositionally ungraded single crystals of
solid solutions
    • 用于固体溶液组成不分级单晶生长的技术
    • US4602979A
    • 1986-07-29
    • US731744
    • 1985-05-07
    • Robert C. MarshallJohn K. KennedyCharles S. Sahagian
    • Robert C. MarshallJohn K. KennedyCharles S. Sahagian
    • C30B15/02C30B15/10
    • C30B15/10C30B15/02
    • This invention describes a modified method of growing high purity, compositionally ungraded, single crystals of multicomponent solid solutions by the Czochralski, Kyropoulos, Bridgman or other related melt growth technique. In the method of this invention, the container or crucible used to contain the multicomponent crystal growing melt is fabricated from the higher melting point component of the multicomponent melt while lower melting point components are positioned within the crucible. The temperature of the crucible is then raised beyond the melting point of the lower melting point component to a temperature which is the exact melting point of the solid solution, or crystal alloy desired. This will dissolve an amount of the crucible material (higher melting point component) equal to the exact amount required to produce a solid solution having the desired composition. A seed is then introduced into the melt and normal crystal pulling is initiated resulting in the growth of a compositionally ungraded crystal having a uniform compositional content throughout its structure.
    • 本发明描述了通过Czochralski,Kyropoulos,Bridgman或其它相关的熔融生长技术生长高分子多组分固溶体的高纯度,组成未分级的单晶的改进方法。 在本发明的方法中,用于容纳多组分晶体生长熔体的容器或坩埚由多组分熔体的较高熔点组分制成,而较低熔点组分位于坩埚内。 然后将坩埚的温度升高到低熔点组分的熔点以上至所需固溶体或晶体合金的精确熔点的温度。 这将溶解一定量的坩埚材料(较高熔点成分)等于产生具有所需组成的固溶体所需的精确量。 然后将晶种引入熔体中,引发正常的晶体拉伸,导致其整个结构具有均匀组成含量的组成未分级晶体的生长。