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1. 发明授权

US06501198B2 Control lever for heavy machinery with near-proximity sensing 有权
标题翻译：用于具有近距离感测的重型机械的控制杆
公开(公告)号：US06501198B2
公开(公告)日：2002-12-31
申请号：US09505781
申请日：2000-02-17
申请人： Richard G. Taylor , Louis A. Bafile
发明人： Richard G. Taylor , Louis A. Bafile
IPC分类号： G05G9047
CPC分类号： G05G5/005 , B66F9/20 , E02F9/2004 , F16P3/12 , F16P3/148 , G05G1/06 , G05G9/047 , H01H2003/0293 , H01H2009/066 , H01H2239/006
摘要： A control lever for heavy machinery includes a proximity sensor for reducing the likelihood of inadvertent activation of the heavy machinery components. The proximity sensor is disposed adjacent an operating position of the control implement and detects when an operator's hand is in an operating position on the control implement in accordance with a capacitance of the operator's hand. The sensing circuit outputs an activate signal to a controller circuit for controlling the heavy machinery components when the operator's hand is in the operating position on the control implement. As a consequence, the operator is not required to perform excessive operations to effect control of the heavy machinery and has both hands available for machine operation.
摘要翻译：用于重型机械的控制杆包括用于减少重型机械部件意外激活的可能性的接近传感器。接近传感器设置在控制工具的操作位置附近，并且根据操作者的手的电容检测操作者的手何时处于控制工具上的操作位置。当操作者的手处于控制工具的操作位置时，检测电路向控制器电路输出激活信号，以控制重型机械部件。因此，操作者不需要执行过多的操作来实现重型机械的控制，并且双手可用于机器操作。

2. 发明授权

US4843137A Method for making polysilanes 失效
标题翻译：制造聚硅烷的方法
公开(公告)号：US4843137A
公开(公告)日：1989-06-27
申请号：US184992
申请日：1988-04-22
申请人： Richard G. Taylor , James W. White
发明人： Richard G. Taylor , James W. White
IPC分类号： C08G77/00 , C08G77/02 , C08G77/60 , G03F7/075
CPC分类号： G03F7/0754 , C08G77/60
摘要： Polysilanes having higher molecular weight are prepared in a higher yield by reacting diorganodihalosilanes with an alkali metal at a temperature of at least 150.degree. C. in a medium which comprises a solvent in which the diorganodihalosilane is soluble. Preferred solvents comprise siloxanes, particularly cyclic dimethylsiloxanes.
摘要翻译：通过使二有机二卤硅烷与碱金属在至少150℃的温度下在包含二有机二卤甲硅烷可溶的溶剂的介质中反应制备具有较高分子量的聚硅烷。优选的溶剂包括硅氧烷，特别是环状二甲基硅氧烷。

3. 外观设计

USD499184S1 Splint for use with a wrist brace 失效
标题翻译：夹板用于腕托
公开(公告)号：USD499184S1
公开(公告)日：2004-11-30
申请号：US29174452
申请日：2003-01-17
申请人： Jessica A. Mills , Richard G. Taylor , Ralph M. Buschbacher
设计人： Jessica A. Mills , Richard G. Taylor , Ralph M. Buschbacher

4. 外观设计

USD461600S1 Wrist support with ring and strap fastening system 失效
标题翻译：手腕支架带环和绑带系统
公开(公告)号：USD461600S1
公开(公告)日：2002-08-13
申请号：US29130067
申请日：2000-09-27
申请人： Edward M. Domanski , Sherry A. Hinds , Richard G. Taylor
设计人： Edward M. Domanski , Sherry A. Hinds , Richard G. Taylor

5. 发明授权

US6124180A BiCMOS process for counter doped collector 失效
标题翻译： BiCMOS工艺的反掺杂集电极
公开(公告)号：US6124180A
公开(公告)日：2000-09-26
申请号：US66618
申请日：1993-05-24
申请人： Stephen T. Chambers , Richard G. Taylor
发明人： Stephen T. Chambers , Richard G. Taylor
IPC分类号： H01L27/06 , H01L21/285 , H01L21/331 , H01L21/8249 , H01L29/10 , H01L29/73 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/28525 , H01L21/8249 , H01L29/1004 , Y10S148/009 , Y10S148/01 , Y10S148/011
摘要： A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.
摘要翻译：其中在较高掺杂的n型衬底区域中形成基极区的BiCMOS工艺。硼以两个不同的能级注入，以形成基极区和基极集电极结附近的反向掺杂n区，以防止碰撞电离。

6. 发明授权

US5420051A Pre-poly emitter implant 失效
标题翻译：预聚发射体植入
公开(公告)号：US5420051A
公开(公告)日：1995-05-30
申请号：US174291
申请日：1993-12-28
申请人： Mark T. Bohr , Richard G. Taylor , Stephen T. Chambers
发明人： Mark T. Bohr , Richard G. Taylor , Stephen T. Chambers
IPC分类号： H01L21/331 , H01L21/265 , H01L21/44
CPC分类号： H01L29/66272 , Y10S148/01
摘要： A process of forming an emitter of a bipolar transistor is described. Dopants of a first conductivity type is implanted in the substrate to form the base. Dopants of a second conductivity type is then implanted into the base region to form a substrate emitter region. A polysilicon layer is then deposited over the substrate emitter and doped to form the doped polysilicon layer. An outdiffusion step follows to link the doped polysilicon layer to the substrate emitter.
摘要翻译：描述形成双极晶体管的发射极的工艺。将第一导电类型的掺杂剂注入到基板中以形成基底。然后将第二导电类型的掺杂剂注入到基极区域中以形成衬底发射极区域。然后将多晶硅层沉积在衬底发射极上并掺杂以形成掺杂多晶硅层。将掺杂多晶硅层连接到衬底发射极之后，进行扩散步骤。

7. 发明授权

US6065565A Hybrid power system for a vehicle 失效
标题翻译：混合动力系统的车辆
公开(公告)号：US6065565A
公开(公告)日：2000-05-23
申请号：US791676
申请日：1997-01-30
申请人： Ignacy Puszkiewicz , Richard G. Taylor
发明人： Ignacy Puszkiewicz , Richard G. Taylor
IPC分类号： B66F11/04
CPC分类号： B66F11/04 , B66F11/042 , B66F11/046
摘要： An apparatus includes a generator assembly having a power source operable to power a generator. The generator is connected to a battery assembly having one or more batteries. The battery assembly is operably connected to a drive system, such as an electric drive propulsion assembly and/or an electric or hydraulic positioning assembly. A selector is operably connected to the generator assembly to select either the battery assembly or both of the generator assembly and the battery assembly to power the apparatus.
摘要翻译：一种装置包括具有可操作以为发电机供电的电源的发电机组件。发电机连接到具有一个或多个电池的电池组件。电池组件可操作地连接到诸如电驱动推进组件和/或电动或液压定位组件的驱动系统。选择器可操作地连接到发电机组件，以选择电池组件或发电机组件和电池组件两者来为设备供电。

8. 发明授权

US5891978A Room temperature curable compositions 失效
标题翻译：室温固化组合物
公开(公告)号：US5891978A
公开(公告)日：1999-04-06
申请号：US856709
申请日：1997-05-15
申请人： Scott S. D. Brown , Patrick J. Merlin , Richard G. Taylor
发明人： Scott S. D. Brown , Patrick J. Merlin , Richard G. Taylor
IPC分类号： C08K5/56 , C08G77/08 , C08K5/00 , C08L83/06 , H05K3/28 , C08G77/06
CPC分类号： H05K3/287 , C08G77/08 , C08K5/0091
摘要： A curable composition which comprises (A) an organosilicon compound having at least one silicon-bonded alkoxy group per molecule and on average at least three hydroxyl and/or alkoxy groups bonded to silicon per molecule; (B) a catalyst component characterized in that the catalyst component is according to the formula ##STR1## wherein R.sup.1 and R.sup.2 each independently represent a pentahapto ligand, R.sup.3 represents a fluoroaromatic ligand having a fluorine atom bonded in the ortho position relative to the M-ligand bond, R.sup.4 represents a group R.sup.3 or a monovalent alkyl, alkenyl, alkoxy, alkoxy alkoxy, halogen, aryl, halo substituted aryl, organosilicon or organosiloxane group and M represents Ti, Zr or Hf, which is curable by exposure by UV radiation; and optionally (C) an organo-silicon having two of silicon-bonded hydroxyl or alkoxy groups per molecule, wherein the organo-silicone is selected from the group consisting of organopolysiloxane and organosilicon-organic copolymer.
摘要翻译：一种可固化组合物，其包含（A）每分子具有至少一个与硅键合的烷氧基的有机硅化合物，并且平均每个分子与至少三个与硅键合的羟基和/或烷氧基; （B）催化剂组分，其特征在于所述催化剂组分按照下式其中R 1和R 2各自独立地表示五巴配体，R 3表示氟原子在相邻M- 配体键，R4表示R3或单价烷基，烯基，烷氧基，烷氧基烷氧基，卤素，芳基，卤素取代的芳基，有机硅或有机硅氧烷基团，M表示可通过紫外线照射而固化的Ti，Zr或Hf。和（C）每分子具有两个与硅键合的羟基或烷氧基的有机硅，其中有机硅选自有机聚硅氧烷和有机硅 - 有机共聚物。

9. 发明授权

US5629547A BICMOS process for counter doped collector 失效
标题翻译：反掺杂收集器的BICMOS工艺
公开(公告)号：US5629547A
公开(公告)日：1997-05-13
申请号：US558874
申请日：1995-11-16
申请人： Stephen T. Chambers , Richard G. Taylor
发明人： Stephen T. Chambers , Richard G. Taylor
IPC分类号： H01L21/285 , H01L21/331 , H01L21/8249 , H01L29/10 , H01L29/76 , H01L23/58 , H01L27/082 , H01L27/102
CPC分类号： H01L29/1004 , H01L21/28525 , H01L21/8249 , H01L29/66272
摘要： A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.
摘要翻译： BiCMOS工艺，其中在较高掺杂的n型衬底区域中形成基极区。硼以两个不同的能级注入，以形成基极区和基极集电极结附近的反向掺杂n区，以防止碰撞电离。

10. 发明授权

US5331020A Organosilicon compounds and compositions containing them 失效
标题翻译：有机硅化合物和含有它们的组合物
公开(公告)号：US5331020A
公开(公告)日：1994-07-19
申请号：US107103
申请日：1993-08-16
申请人： Scott S. D. Brown , Peter C. Hupfield , Peter Y. K. Lo , Richard G. Taylor
发明人： Scott S. D. Brown , Peter C. Hupfield , Peter Y. K. Lo , Richard G. Taylor
IPC分类号： C08F2/46 , C08G77/20 , C08G77/38 , C08G77/50 , C08K5/00
CPC分类号： C08G77/50 , C08G77/20 , C08G77/38 , C08K5/0091
摘要： Organosilicon compounds with a siloxane portion and groups of the general formula --OR'OCH.dbd.CHR" (i) linked via an Si--O--C bond, wherein R' is a divalent hydrocarbon radical or a group --R.degree.--(OR.degree.).sub.n --, wherein R.degree. is alkylene and n is from 1 to 12, R" is H or alkyl are useful in radiation curable compositions, in which they are mixed with an initiator. The compositions are particularly useful in UV radiation curable relase coatings.
摘要翻译：具有硅氧烷部分的有机硅化合物和通式为-OR'OCH = CHR“（i）的基团通过Si-OC键连接，其中R'为二价烃基或基团-R - - （OR DEG） n-，其中R DEG是亚烷基，n是1至12，R“是H或烷基可用于可辐射固化组合物中，其中它们与引发剂混合。所述组合物特别适用于紫外线辐射固化型涂料。

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