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1. 发明授权

US06185506B2 Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptors 失效
标题翻译：基于经验证的分子结构描述符选择小分子的最佳多样文库的方法
公开(公告)号：US06185506B2
公开(公告)日：2001-02-06
申请号：US08592132
申请日：1996-01-26
申请人： Richard D. Cramer , David E. Patterson , Robert D. Clark , Allan M. Ferguson
发明人： Richard D. Cramer , David E. Patterson , Robert D. Clark , Allan M. Ferguson
IPC分类号： G06F1700
CPC分类号： C40B50/02 , B01J2219/007 , C40B30/02 , G06F19/704 , Y10S707/99943
摘要： The use of biological screening purposes of a subset (library) of a large combinatorially accessible chemical universe increases the efficiency of the screening process only if the subset contains members representative of the total diversity of the universe. In order to insure inclusion in the subset of molecules representing the total diversity of the universe under consideration, valid molecular descriptors which quantitatively reflect the diversity of the molecules in the universe are required. A unique validation method is used to examine both a new three dimensional steric metric and some prior art metrics. With this method, the relative usefulness/validity of individual metrics can be ascertained from their application to randomly selected literature data sets. By the appropriate application of validated metrics, the method of this invention selects a subset of a combinatorial accessible chemical universe such that the molecules of the subset are representative of all the diversity present in the universe and yet do not contain multiple members which represent the same diversity (oversample). The use of the neighborhood definition of a validated metric may also be used to combine (without oversampling the same diversity) any number of combinatorial screening libraries.
摘要翻译：只有当子集包含代表宇宙总体多样性的成员时，才能使用大型组合可访问化学宇宙的子集（库）的生物筛选目的来提高筛选过程的效率。为了确保包含在表示所考虑的宇宙总体多样性的分子子集中，需要定量反映宇宙中分子多样性的有效分子描述符。一种独特的验证方法用于检查新的三维空间度量和一些现有技术的度量。使用这种方法，可以从其应用于随机选择的文献数据集中确定各个度量的相对有用性/有效性。通过适当应用经验证的度量，本发明的方法选择组合可访问化学宇宙的子集，使得该子集的分子代表存在于宇宙中的所有分集，但不包含表示相同的多个成员多样性（过度抽样）。使用验证度量的邻域定义也可以用于组合（不过采样相同的多样性）任意数量的组合筛选库。

2. 发明授权

US07184893B2 Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptors 有权
标题翻译：基于经验证的分子结构描述符选择小分子的最佳多样文库的方法
公开(公告)号：US07184893B2
公开(公告)日：2007-02-27
申请号：US09776708
申请日：2001-02-05
申请人： Richard D. Cramer , Robert D. Clark
发明人： Richard D. Cramer , Robert D. Clark
IPC分类号： G01N33/48 , G06F7/00 , G06G7/48
CPC分类号： C40B50/02 , B01J2219/007 , C40B30/02 , G06F19/704 , Y10S707/99943
摘要： The use for biological screening purposes of a subset (library) of a large combinatorially accessible chemical universe increases the efficiency of the screening process only if the subset contains members representative of the total diversity of the universe. In order to insure inclusion in the subset of molecules representing the total diversity of the universe under consideration, valid molecular descriptors which quantitatively reflect the diversity of the molecules in the universe are required. A unique validation method is used to examine both a new three dimensional steric metric and some prior art metrics. With this method, the relative usefulness/validity of individual metrics can be ascertained from their application to randomly selected literature data sets. By the appropriate application of validated metrics, the method of this invention selects a subset of a combinatorial accessible chemical universe such that the molecules of the subset are representative of all the diversity present in the universe and yet do not contain multiple members which represent the same diversity (oversample). The use of the neighborhood definition of a validated metric may also be used to combine (without oversampling the same diversity) any number of combinatorial screening libraries.
摘要翻译：用于大型组合可访问化学宇宙的子集（库）的生物筛选目的仅在子集包含代表宇宙总体多样性的成员时提高筛选过程的效率。为了确保包含在表示所考虑的宇宙总体多样性的分子子集中，需要定量反映宇宙中分子多样性的有效分子描述符。一种独特的验证方法用于检查新的三维空间度量和一些现有技术的度量。使用这种方法，可以从其应用于随机选择的文献数据集中确定各个度量的相对有用性/有效性。通过适当应用经验证的度量，本发明的方法选择组合可访问化学宇宙的子集，使得该子集的分子代表存在于宇宙中的所有分集，但不包含表示相同的多个成员多样性（过度抽样）。使用验证度量的邻域定义也可以用于组合（不过采样相同的多样性）任意数量的组合筛选库。

3. 发明申请

US20130115721A1 EPITAXIAL FILM GROWTH IN RETROGRADE WELLS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的退火电极中的外延膜生长
公开(公告)号：US20130115721A1
公开(公告)日：2013-05-09
申请号：US13487878
申请日：2012-06-04
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/8238 , H01L21/66
CPC分类号： H01L21/823431 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L21/31116
摘要： A method of fabricating a semiconductor device. A substrate is provided and includes a dielectric layer and a mask layer, which is patterned and developed. A plurality of trenches is created within the dielectric material by a retrograde etching process. The plurality of trenches is subsequently overfilled with a material by heteroepitaxial growth with aspect ratio trapping. The material includes at least one of germanium, a Group III-V compound, or a combination of two or more thereof. The overfilled plurality of trenches is then planarized.
摘要翻译：一种制造半导体器件的方法。提供了一种衬底，其包括被图案化和显影的电介质层和掩模层。通过逆向蚀刻工艺在电介质材料内产生多个沟槽。多个沟槽随后通过具有纵横比捕获的异质外延生长而用材料过度填充。该材料包括锗，III-V族化合物或其两种或更多种的组合中的至少一种。然后将过满的多个沟槽平坦化。

4. 发明授权

US07939455B2 Method for forming strained silicon nitride films and a device containing such films 有权
标题翻译：形成应变氮化硅膜的方法和含有这种膜的装置
公开(公告)号：US07939455B2
公开(公告)日：2011-05-10
申请号：US11529380
申请日：2006-09-29
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , H01L21/02211 , H01L21/0228 , H01L21/3185 , H01L21/76829 , H01L29/7843
摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.
摘要翻译：形成应变SiN膜的方法和包含应变SiN膜的半导体器件。该方法包括将衬底暴露于包括硅前体的气体。将衬底暴露于包括配置为与第一反应特性与硅前体反应的第一氮前体的气体。衬底还暴露于包括配置为与硅前体反应的第二氮前体的气体，其具有与第一反应特性不同的第二反应特性，使得在衬底上形成的SiN膜的性质改变以提供应变SiN膜。根据另一个实施方案，将衬底暴露于包含硅前体和第一和第二氮前体的气体脉冲，其中第一和第二前体的比例在曝光期间变化。

5. 发明申请

US20100261342A1 SEMICONDUCTOR DEVICE CONTAINING A BURIED THRESHOLD VOLTAGE ADJUSTMENT LAYER AND METHOD OF FORMING 有权
标题翻译：包含电压电压调节层的半导体器件及其形成方法
公开(公告)号：US20100261342A1
公开(公告)日：2010-10-14
申请号：US12823541
申请日：2010-06-25
申请人： Robert D. Clark , Gerrit J. Leusink
发明人： Robert D. Clark , Gerrit J. Leusink
IPC分类号： H01L21/28
CPC分类号： H01L21/3141 , H01L29/1033 , H01L29/513 , H01L29/517
摘要： A method is provided for forming a semiconductor device containing a buried threshold voltage adjustment layer. The method includes providing a substrate containing an interface layer, depositing a first high-k film on the interface layer, depositing a threshold voltage adjustment layer on the first high-k film, and depositing a second high-k film on the threshold voltage adjustment layer such that the threshold voltage adjustment layer is interposed between the first and second high-k films. The semiconductor device containing a patterned gate stack is described.
摘要翻译：提供一种用于形成包含掩埋阈值电压调节层的半导体器件的方法。该方法包括提供包含界面层的衬底，在界面层上沉积第一高k膜，在第一高k膜上沉积阈值电压调节层，以及在阈值电压调节上沉积第二高k膜使得阈值电压调整层插入在第一和第二高k膜之间。描述了包含图案化栅极堆叠的半导体器件。

6. 发明申请

US20080081470A1 Method for forming strained silicon nitride films and a device containing such films 有权
标题翻译：形成应变氮化硅膜的方法和含有这种膜的装置
公开(公告)号：US20080081470A1
公开(公告)日：2008-04-03
申请号：US11529380
申请日：2006-09-29
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/44
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , H01L21/02211 , H01L21/0228 , H01L21/3185 , H01L21/76829 , H01L29/7843
摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.
摘要翻译：形成应变SiN膜的方法和包含应变SiN膜的半导体器件。该方法包括将衬底暴露于包括硅前体的气体。将衬底暴露于包括配置为与第一反应特性与硅前体反应的第一氮前体的气体。衬底还暴露于包括配置为与硅前体反应的第二氮前体的气体，其具有与第一反应特性不同的第二反应特性，使得在衬底上形成的SiN膜的性质改变以提供应变SiN膜。根据另一个实施方案，将衬底暴露于包含硅前体和第一和第二氮前体的气体脉冲，其中第一和第二前体的比例在曝光期间变化。

7. 发明申请

US20080079111A1 SEMICONDUCTOR DEVICES CONTAINING NITRIDED HIGH DIELECTRIC CONSTANT FILMS 审中-公开
标题翻译：含有高介电常数膜的半导体器件
公开(公告)号：US20080079111A1
公开(公告)日：2008-04-03
申请号：US11537492
申请日：2006-09-29
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L29/00
CPC分类号： H01L29/518 , C23C16/308 , C23C16/40 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02148 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/28202 , H01L21/3141 , H01L21/3145 , H01L21/3162 , H01L21/31645 , H01L29/78
摘要： A semiconductor device containing a substrate, a nitrided high-k film on the substrate, where the nitrided high-k film contains an oxygen-containing film, and a nitrogen-containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. According to one embodiment, the high-k film can optionally further contain aluminum, silicon, or aluminum and silicon. The semiconductor device can contain a transistor, a deep trench capacitor, or a stacked capacitor.
摘要翻译：包含衬底的半导体器件，衬底上的氮化高k膜，其中氮化高k膜含有含氧膜，以及通过其厚度的至少一部分被氧化的含氮膜。含氮膜和含氧膜含有相同的一种或多种选自碱土金属元素，稀土元素和元素周期表IVB族元素的金属元素。根据一个实施例，高k膜可任选地进一步包含铝，硅或铝和硅。半导体器件可以包含晶体管，深沟槽电容器或堆叠电容器。

8. 发明授权

US06535819B1 Optimal dissimilarity method for choosing distinctive items of information from a large body of information 失效
标题翻译：从大量信息中选择独特信息项的最佳不相似方法
公开(公告)号：US06535819B1
公开(公告)日：2003-03-18
申请号：US09059017
申请日：1998-04-13
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： G06F1900
CPC分类号： G06K9/6219 , G06F19/707
摘要： The method of this invention identifies distinctive items of information from a larger body of information on the basis of similarities or dissimilarities among the items and achieves a significant increase in speed as well as the ability to balance the representativeness and diversity among the identified items by applying selection criteria to randomly chosen subsamples of all the information. The method is illustrated with reference to the compound selection requirements of medicinal chemists. Compound selection methods currently available to chemists are based on maximum or minimum dissimilarity selection or on hierarchical clustering. The method of the invention is more general and incorporates maximum and minimum dissimilarity-based selection as special cases. In addition, the number of iterations required to select the items is a multiple of the group size which, at its greatest, is approximately the square root of the population size. Thus, the selection method runs much faster than the methods of the prior art. Further, by adjusting the subsample size parameter K, it is possible to control the balance between representativeness and diversity in the compounds selected. In addition, the method can mimic the distributional properties of selections based on hierarchical clustering and, at least in some cases, improve upon them.
摘要翻译：本发明的方法基于各项目之间的相似性或不相似性，从更大量的信息中识别信息的特征，并通过应用来实现速度的显着提高以及平衡所识别的项目之间的代表性和多样性的能力所有信息的随机选择子样本的选择标准。该方法参照药物化学家的化合物选择要求进行说明。化学家目前可用的化合物选择方法是基于最大或最小不相似选择或层级聚类。本发明的方法更一般，并且将特定情况下的最大和最小不相似的选择结合起来。此外，选择项目所需的迭代次数是群体大小的倍数，其大小最大，为群体大小的平方根。因此，选择方法比现有技术的方法运行得快得多。此外，通过调整子样本大小参数K，可以控制所选化合物的代表性和多样性之间的平衡。此外，该方法可以模仿基于分层聚类的选择的分布属性，并且至少在某些情况下可以改进它们。

9. 发明申请

US20140179091A1 METHOD FOR FORMING ULTRA-SHALLOW DOPING REGIONS BY SOLID PHASE DIFFUSION 有权
标题翻译：通过固相扩散法形成超低掺杂区的方法
公开(公告)号：US20140179091A1
公开(公告)日：2014-06-26
申请号：US14066676
申请日：2013-10-29
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/225
CPC分类号： H01L21/2256 , H01L21/2254 , H01L21/2255 , H01L29/513 , H01L29/517 , H01L29/66492 , H01L29/78
摘要： A method for forming ultra-shallow dopant regions in a substrate is provided. One embodiment includes depositing a first dopant layer containing a first dopant in direct contact with the substrate, patterning the first dopant layer, depositing a second dopant layer containing a second dopant in direct contact with the substrate adjacent the patterned first dopant layer, the first and second dopant layers containing an oxide, a nitride, or an oxynitride, where the first and second dopant layers contain an n-type dopant or a p-type dopant with the proviso that the first or second dopant layer do not contain the same dopant, and diffusing the first dopant from the first dopant layer into the substrate to form a first ultra-shallow dopant region in the substrate, and diffusing the second dopant from the second dopant layer into the substrate to form a second ultra-shallow dopant region in the substrate.
摘要翻译：提供了一种在衬底中形成超浅掺杂区的方法。一个实施例包括沉积包含与衬底直接接触的第一掺杂剂的第一掺杂剂层，图案化第一掺杂剂层，沉积与邻近图案化的第一掺杂剂层的衬底直接接触的第二掺杂剂层的第二掺杂剂层，包含氧化物，氮化物或氧氮化物的第二掺杂剂层，其中第一和第二掺杂剂层含有n型掺杂剂或p型掺杂剂，条件是第一或第二掺杂剂层不含相同的掺杂剂，并且将第一掺杂剂从第一掺杂剂层扩散到衬底中以在衬底中形成第一超浅掺杂剂区域，并且将第二掺杂剂从第二掺杂剂层扩散到衬底中以在第二掺杂剂区域中形成第二超浅掺杂剂区域基质。

10. 发明授权

US08580664B2 Method for forming ultra-shallow boron doping regions by solid phase diffusion 有权
标题翻译：通过固相扩散形成超浅硼掺杂区的方法
公开(公告)号：US08580664B2
公开(公告)日：2013-11-12
申请号：US13077688
申请日：2011-03-31
申请人： Robert D. Clark
发明人： Robert D. Clark
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/322 , H01L21/02175 , H01L21/0228 , H01L21/2254 , H01L21/2255 , H01L21/2256 , H01L21/31111 , H01L21/324 , H01L29/105 , H01L29/66545 , H01L29/6659 , H01L29/7391
摘要： A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of boron amide precursor or an organoboron precursor and a reactant gas. The method further includes patterning the dopant layer and forming an ultra-shallow dopant region in the substrate by diffusing boron from the boron dopant layer into the substrate by a thermal treatment.
摘要翻译：提供了一种在衬底中形成超浅硼掺杂剂区域的方法。在一个实施例中，该方法包括通过原子层沉积（ALD）沉积与衬底直接接触的硼掺杂剂层，其中硼掺杂剂层含有通过交替气态暴露硼形成的氧化物，氮化物或氧氮化物酰胺前体或有机硼原子和反应气体。所述方法还包括通过热处理将硼从硼掺杂剂层扩散到衬底中，使掺杂剂层图案化并在衬底中形成超浅掺杂剂区域。

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