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    • 3. 发明授权
    • Camera
    • 相机
    • US06317567B1
    • 2001-11-13
    • US09394872
    • 1999-09-13
    • Tsutomu IchikawaHiroaki Minami
    • Tsutomu IchikawaHiroaki Minami
    • G03B1724
    • G03B17/245
    • In a camera system for exposing an image of an object in each frame on a film, an inherent film number is optically exposed in a predetermined region on the film which is disposed before a first frame and not exposed. Furthermore, all frame data such as shutter speed, aperture number, and so on with respect to all frames on the same film are recorded together in a file in a memory card. A name corresponding to the inherent film number is used as a name of the file.
    • 在用于在胶片上的每个帧中的对象的图像曝光的照相机系统中,固有的胶片数量在设置在第一帧之前而不被曝光的胶片上的预定区域中被光学曝光。 此外,相对于同一胶片上的所有帧的所有帧数据(诸如快门速度,光圈数等)一起记录在存储卡中的文件中。 使用与固有电影号相对应的名称作为文件的名称。
    • 4. 发明授权
    • Oxide film fabrication method and electronic device
    • 氧化膜制作方法和电子器件
    • US6033532A
    • 2000-03-07
    • US807175
    • 1997-02-27
    • Hiroaki Minami
    • Hiroaki Minami
    • C23C14/08C23C14/34C23C14/46G11B5/31G11B5/39H01L21/203H01L21/316
    • G11B5/3903C23C14/081C23C14/34C23C14/46G11B5/3103G11B5/3163
    • A method of forming an oxide film over the substrate of an electronic device. In one embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by bias sputtering. Then, a second metal oxide film layer is deposited by ion beam sputtering on the first metal oxide film layer. In another embodiment, a first metal oxide film layer is deposited on the substrate of the electronic device by ion beam sputtering. Then, a second metal oxide film layer is deposited by bias sputtering on the first metal oxide film layer. In yet another embodiment, a first metal oxide film layer having a first degree of purity is deposited on the substrate of the electronic device. Then, a second metal oxide film layer having a second degree of purity is deposited on the first metal oxide film layer. The first degree of purity is different than the second degree of purity.
    • 一种在电子器件的衬底上形成氧化膜的方法。 在一个实施例中,通过偏压溅射将第一金属氧化物膜层沉积在电子器件的衬底上。 然后,通过离子束溅射将第二金属氧化物膜层沉积在第一金属氧化物膜层上。 在另一个实施例中,通过离子束溅射在电子器件的衬底上沉积第一金属氧化物膜层。 然后,通过偏压溅射将第二金属氧化物膜层沉积在第一金属氧化物膜层上。 在又一个实施例中,具有第一纯度的第一金属氧化物膜层沉积在电子器件的衬底上。 然后,在第一金属氧化物膜层上沉积具有第二纯度的第二金属氧化物膜层。 第一纯度与第二纯度不同。