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1. 发明申请

US20070171703A1 CURRENT SOURCE OF MAGNETIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：磁性随机存取存储器的电流源
公开(公告)号：US20070171703A1
公开(公告)日：2007-07-26
申请号：US11558297
申请日：2006-11-09
申请人： Rei-Fu Huang , Young-Shying Chen , Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
发明人： Rei-Fu Huang , Young-Shying Chen , Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A current source for magnetic random access memory (MRAM) is provided, including a band-gap reference circuit, a first stage buffer, and a plurality of second stage buffers. The band-gap reference circuit provides an output reference voltage which is locked by the first stage buffer. The plurality of second stage buffers generate a stable voltage in response to the locked voltage, so as to provide a current for the conducting wire after being converted, such that magnetic memory cell changes its memory state in response to the current. The current source may reduce the discharge time under the operation of biphase current, so as to raise the operating speed. Further, the circuit area of the current source for the MRAM is also reduced. The operation of multiple write wires may be provided simultaneously to achieve parallel write.
摘要翻译：提供了一种用于磁随机存取存储器（MRAM）的电流源，包括带隙参考电路，第一级缓冲器和多个第二级缓冲器。带隙基准电路提供由第一级缓冲器锁定的输出参考电压。多个第二级缓冲器响应于锁定电压产生稳定的电压，以便在转换之后为导线提供电流，使得磁存储单元响应于电流来改变其存储状态。电流源可以减少双相电流运行时的放电时间，从而提高运行速度。此外，MRAM的电流源的电路面积也减小。可以同时提供多条写入线的操作以实现并行写入。

2. 发明授权

US07577017B2 High-bandwidth magnetoresistive random access memory devices and methods of operation thereof 有权
标题翻译：高带宽磁阻随机存取存储器件及其操作方法
公开(公告)号：US07577017B2
公开(公告)日：2009-08-18
申请号：US11581466
申请日：2006-10-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：一种用于访问磁阻随机存取存储器（MRAM）器件的存储单元的方法，其中存储器单元包括多个存储器单元，包括通过识别其中存储有与基准不同的基准的存储器单元来写入存储器单元写入; 并同时写入所有存储单元。 MRAM装置包括多个写字线，多个写位线和多个存储器单元。每个存储单元包括多个存储单元。每个存储单元包括具有一个或多个容易轴的自由磁区，该易磁轴与写位线非垂直并且非垂直于写字线，固定磁区和自由磁区与固定磁之间的隧道势垒地区。

3. 发明申请

US20080298119A1 MAGNETIC MEMORY CELL WITH MULTIPLE-BIT IN STACKED STRUCRUTE AND MAGNETIC MEMORY DEVICE 失效
标题翻译：具有多个位的堆叠式磁带和磁记忆体装置中的磁记忆体单元
公开(公告)号：US20080298119A1
公开(公告)日：2008-12-04
申请号：US11853818
申请日：2007-09-12
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5607 , Y10S977/935
摘要： A multi-bit magnetic memory cell in a stacked structure controlled by at least one read bit line and one read word line is provided. The multi-bit magnetic memory cell includes at least two magnetic memory units and a switching device. Each magnetic memory unit has a magneto-resistance value and at least the two magnetic memory units are stacked to form a circuit of serial connection or parallel connection. The circuit and the read bit line are connected. The switching device is connected to the circuit, wherein the switching device is controlled by the read word line to be conducting or non-conducting so as to connect the circuit with a ground voltage. Furthermore, a plurality of the multi-bit magnetic cells is used to form a magnetic memory device.
摘要翻译：提供了由至少一个读位线和一个读字线控制的堆叠结构中的多位磁存储单元。多位磁存储单元包括至少两个磁存储单元和开关器件。每个磁存储器单元具有磁阻值，并且至少两个磁存储器单元被堆叠以形成串联或并联的电路。电路和读位线相连。开关装置连接到电路，其中开关装置由读取的字线控制为导通或不导通，以将电路与接地电压连接。此外，使用多个多位磁单元来形成磁存储器件。

4. 发明授权

US07420837B2 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US07420837B2
公开(公告)日：2008-09-02
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

5. 发明授权

US07800937B2 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US07800937B2
公开(公告)日：2010-09-21
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

6. 发明授权

US07463510B2 High-bandwidth magnetoresistive random access memory devices 有权
标题翻译：高带宽磁阻随机存取存储器件
公开(公告)号：US07463510B2
公开(公告)日：2008-12-09
申请号：US11707100
申请日：2007-02-16
申请人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
发明人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

7. 发明申请

US20070201266A1 High-bandwidth magnetoresistive random access memory devices 有权
标题翻译：高带宽磁阻随机存取存储器件
公开(公告)号：US20070201266A1
公开(公告)日：2007-08-30
申请号：US11707100
申请日：2007-02-16
申请人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
发明人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

8. 发明授权

US07539049B2 Magnetic random access memory and operation method 失效
标题翻译：磁性随机存取存储器及操作方法
公开(公告)号：US07539049B2
公开(公告)日：2009-05-26
申请号：US11946025
申请日：2007-11-27
申请人： Chien-Chung Hung , Ming-Jer Kao , Ding-Yeong Wang , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Ding-Yeong Wang , Yuan-Jen Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , Y10S977/935
摘要： A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.
摘要翻译：磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。易轴和第一方向写电流线形成约45°的包含角度。读位线电路连接到存储器单元的第一端。读取字线电路连接到存储器单元的第二端子。

9. 发明授权

US07515458B2 Structure and access method for magnetic memory cell and circuit of magnetic memory 失效
标题翻译：磁存储单元和磁记忆电路的结构和存取方法
公开(公告)号：US07515458B2
公开(公告)日：2009-04-07
申请号：US11465460
申请日：2006-08-18
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译：在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。隧道势垒层设置在堆叠的磁性钉扎层上。无磁性堆叠层设置在隧道势垒层上。无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。磁偏置层也可以设置在顶部自由层上。

10. 发明申请

US20070030727A1 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US20070030727A1
公开(公告)日：2007-02-08
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

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