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    • 2. 发明授权
    • In-situ device removal for multi-chip modules
    • 多芯片模块的原位设备拆除
    • US5553766A
    • 1996-09-10
    • US342563
    • 1994-11-21
    • Raymond A. JacksonKathleen A. LidestriDavid C. LinnellRaj N. Master
    • Raymond A. JacksonKathleen A. LidestriDavid C. LinnellRaj N. Master
    • B23K1/018H05K13/04H05K3/34B23K3/00
    • H05K13/0486B23K1/018B23K2201/40
    • Deformation of a lifting ring of bimetallic structure or memory metal is matched to a solder softening or melting temperature to apply forces to lift a chip from a supporting structure, such as a substrate or multi-chip module, only when the solder connections between the chip and the supporting structure are softened or melted. The temperature of the chip, module and solder connections there between is achieved in a commercially available box oven or belt furnace or the like and results in much reduced internal chip temperatures and thermal gradients within the chip as compared to known hot chip removal processes. Tensile and/or shear forces at solder connections and chip and substrate contacts are much reduced in comparison with known cold chip removal processes. Accordingly, the process is repeatable at will without significant damage to or alteration of electrical characteristics of the chip or substrate.
    • 双金属结构或记忆金属的提升环的变形与焊料软化或熔化温度匹配,以施加力以从支撑结构(例如基板或多芯片模块)提升芯片,只有当芯片之间的焊料连接 支撑结构软化或熔化。 与市售的盒式炉或带式炉等相比,芯片,模块和焊料连接的温度是可以实现的,并且与已知的热切屑去除工艺相比,在芯片内的内部芯片温度和热梯度大大降低。 与已知的冷芯片去除工艺相比,焊料连接和芯片和基板触点处的拉伸和/或剪切力大大降低。 因此,该过程可以随意重复,而不会显着损坏或改变芯片或衬底的电特性。