专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08536656B2 Self-aligned contacts for high k/metal gate process flow 有权
标题翻译：用于高k /金属栅极工艺流程的自对准触点
公开(公告)号：US08536656B2
公开(公告)日：2013-09-17
申请号：US12987221
申请日：2011-01-10
申请人： Ravikumar Ramachandran , Ramachandra Divakaruni , Ying Li
发明人： Ravikumar Ramachandran , Ramachandra Divakaruni , Ying Li
IPC分类号： H01L21/70
CPC分类号： H01L29/401 , H01L21/76895 , H01L21/76897 , H01L29/49 , H01L29/4983 , H01L29/51 , H01L29/66545 , H01L29/6656
摘要： A semiconductor structure is provided that includes a semiconductor substrate having a plurality of gate stacks located on a surface of the semiconductor substrate. Each gate stack includes, from bottom to top, a high k gate dielectric layer, a work function metal layer and a conductive metal. A spacer is located on sidewalls of each gate stack and a self-aligned dielectric liner is present on an upper surface of each spacer. A bottom surface of each self-aligned dielectric liner is present on an upper surface of a semiconductor metal alloy. A contact metal is located between neighboring gate stacks and is separated from each gate stack by the self-aligned dielectric liner. The structure also includes another contact metal having a portion that is located on and in direct contact with an upper surface of the contact metal and another portion that is located on and in direct contact with the conductive metal of one of the gate stacks. Methods of forming the semiconductor structure using a replacement gate and a non-replacement gate scheme are also disclosed.
摘要翻译：提供一种半导体结构，其包括具有位于半导体衬底的表面上的多个栅极叠层的半导体衬底。每个栅极堆叠包括从底部到顶部的高k栅极电介质层，功函数金属层和导电金属。间隔件位于每个栅极堆叠的侧壁上，并且自对准电介质衬垫存在于每个间隔件的上表面上。每个自对准电介质衬垫的底表面存在于半导体金属合金的上表面上。接触金属位于相邻的栅极堆叠之间，并通过自对准电介质衬垫与每个栅极堆叠分离。该结构还包括另一个接触金属，其具有位于接触金属的上表面上且与触头金属的上表面直接接触的部分，以及位于与其中一个栅极叠层的导电金属直接接触的另一部分。还公开了使用替换栅极和非替代栅极方案形成半导体结构的方法。

2. 发明申请

US20120175711A1 Self-Aligned Contacts for High k/Metal Gate Process Flow 有权
标题翻译：用于高k /金属栅极工艺流程的自对准触点
公开(公告)号：US20120175711A1
公开(公告)日：2012-07-12
申请号：US12987221
申请日：2011-01-10
申请人： Ravikumar Ramachandran , Ramachandra Divakaruni , Ying Li
发明人： Ravikumar Ramachandran , Ramachandra Divakaruni , Ying Li
IPC分类号： H01L29/772 , H01L21/283
CPC分类号： H01L29/401 , H01L21/76895 , H01L21/76897 , H01L29/49 , H01L29/4983 , H01L29/51 , H01L29/66545 , H01L29/6656
摘要： A semiconductor structure is provided that includes a semiconductor substrate having a plurality of gate stacks located on a surface of the semiconductor substrate. Each gate stack includes, from bottom to top, a high k gate dielectric layer, a work function metal layer and a conductive metal. A spacer is located on sidewalls of each gate stack and a self-aligned dielectric liner is present on an upper surface of each spacer. A bottom surface of each self-aligned dielectric liner is present on an upper surface of a semiconductor metal alloy. A contact metal is located between neighboring gate stacks and is separated from each gate stack by the self-aligned dielectric liner. The structure also includes another contact metal having a portion that is located on and in direct contact with an upper surface of the contact metal and another portion that is located on and in direct contact with the conductive metal of one of the gate stacks. Methods of forming the semiconductor structure using a replacement gate and a non-replacement gate scheme are also disclosed.
摘要翻译：提供一种半导体结构，其包括具有位于半导体衬底的表面上的多个栅极叠层的半导体衬底。每个栅极堆叠包括从底部到顶部的高k栅极电介质层，功函数金属层和导电金属。间隔件位于每个栅极堆叠的侧壁上，并且自对准电介质衬垫存在于每个间隔件的上表面上。每个自对准电介质衬垫的底表面存在于半导体金属合金的上表面上。接触金属位于相邻的栅极堆叠之间，并通过自对准电介质衬垫与每个栅极堆叠分离。该结构还包括另一个接触金属，其具有位于接触金属的上表面上且与触头金属的上表面直接接触的部分，以及位于与其中一个栅极叠层的导电金属直接接触的另一部分。还公开了使用替换栅极和非替代栅极方案形成半导体结构的方法。

3. 发明申请

US20120256267A1 Electrical Fuse Formed By Replacement Metal Gate Process 有权
标题翻译：通过更换金属浇口工艺形成的电保险丝
公开(公告)号：US20120256267A1
公开(公告)日：2012-10-11
申请号：US13080019
申请日：2011-04-05
申请人： Ying Li , Ramachandra Divakaruni
发明人： Ying Li , Ramachandra Divakaruni
IPC分类号： H01L27/06 , H01L21/768 , H01L21/28
CPC分类号： H01L23/5256 , H01L27/0629 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating an electrical fuse and a field effect transistor having a metal gate which includes removing material from first and second openings in a dielectric region overlying a substrate, wherein the first opening is aligned with an active semiconductor region of the substrate, and the second opening is aligned with an isolation region of the substrate, and the active semiconductor region including a source region and a drain region adjacent edges of the first opening. An electrical fuse can be formed which has a fuse element filling the second opening, the fuse element being a monolithic region of a single conductive material being a metal or a conductive compound of a metal. A metal gate can be formed which extends within the first opening to define a field effect transistor (“FET”) which includes the metal gate and the active semiconductor region.
摘要翻译：提供一种用于制造电熔丝和场效应晶体管的方法，所述场效应晶体管具有金属栅极，该金属栅极包括从覆盖衬底的电介质区域中的第一和第二开口去除材料，其中第一开口与衬底的有源半导体区域对准，并且所述第二开口与所述衬底的隔离区域对准，并且所述有源半导体区域包括与所述第一开口的边缘相邻的源极区域和漏极区域。可以形成电熔丝，其具有填充第二开口的熔丝元件，熔丝元件是单一导电材料的整体区域，金属或金属的导电化合物。可以形成在第一开口内延伸的金属栅极，以限定包括金属栅极和有源半导体区域的场效应晶体管（FET）。

4. 发明授权

US08367494B2 Electrical fuse formed by replacement metal gate process 有权
标题翻译：电气保险丝由更换金属栅工艺形成
公开(公告)号：US08367494B2
公开(公告)日：2013-02-05
申请号：US13080019
申请日：2011-04-05
申请人： Ying Li , Ramachandra Divakaruni
发明人： Ying Li , Ramachandra Divakaruni
IPC分类号： H01L21/8238
CPC分类号： H01L23/5256 , H01L27/0629 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating an electrical fuse and a field effect transistor having a metal gate which includes removing material from first and second openings in a dielectric region overlying a substrate, wherein the first opening is aligned with an active semiconductor region of the substrate, and the second opening is aligned with an isolation region of the substrate, and the active semiconductor region including a source region and a drain region adjacent edges of the first opening. An electrical fuse can be formed which has a fuse element filling the second opening, the fuse element being a monolithic region of a single conductive material being a metal or a conductive compound of a metal. A metal gate can be formed which extends within the first opening to define a field effect transistor (“FET”) which includes the metal gate and the active semiconductor region.
摘要翻译：提供一种用于制造电熔丝和场效应晶体管的方法，所述场效应晶体管具有金属栅极，该金属栅极包括从覆盖衬底的电介质区域中的第一和第二开口去除材料，其中所述第一开口与所述衬底的有源半导体区域对准，并且所述第二开口与所述衬底的隔离区域对准，并且所述有源半导体区域包括与所述第一开口的边缘相邻的源极区域和漏极区域。可以形成电熔丝，其具有填充第二开口的熔丝元件，熔丝元件是单一导电材料的整体区域，金属或金属的导电化合物。可以形成在第一开口内延伸的金属栅极，以限定包括金属栅极和有源半导体区域的场效应晶体管（FET）。

5. 发明申请

US20120139061A1 Self-Aligned Contact For Replacement Gate Devices 有权
标题翻译：用于替代门装置的自对准触点
公开(公告)号：US20120139061A1
公开(公告)日：2012-06-07
申请号：US12958607
申请日：2010-12-02
申请人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
发明人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
IPC分类号： H01L29/772 , H01L21/283
CPC分类号： H01L29/78 , H01L21/76895 , H01L21/76897 , H01L21/823842 , H01L21/823871 , H01L29/49 , H01L29/51 , H01L29/66545 , H01L29/66606 , H01L29/7833 , H01L29/7843
摘要： A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure.
摘要翻译：替代栅极堆叠的导电顶表面通过至少一个蚀刻相对于平坦化介电层的顶表面凹陷。介电覆盖层沉积在平坦化电介质层和替代栅极堆叠的顶表面上，使得替代栅极堆叠上的介电顶盖层的一部分的顶表面相对于上述电介质层的另一部分垂直凹陷平坦化介电层。电介质覆盖层的垂直偏移可以与选择性通孔蚀刻工艺结合使用以形成自对准接触结构。

6. 发明授权

US08642424B2 Replacement metal gate structure and methods of manufacture 有权
标题翻译：替代金属门结构及其制造方法
公开(公告)号：US08642424B2
公开(公告)日：2014-02-04
申请号：US13180842
申请日：2011-07-12
申请人： Sameer H. Jain , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
发明人： Sameer H. Jain , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28167 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L21/823864 , H01L29/165 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7843
摘要： A replacement metal gate structure and methods of manufacturing the same is provided. The method includes forming at least one trench structure and forming a liner of high-k dielectric material in the at least one trench structure. The method further includes adjusting a height of the liner of high-k dielectric material. The method further includes forming at least one workfunction metal over the liner, and forming a metal gate structure in the at least one trench structure, over the at least one workfunction metal and the liner of high-k dielectric material.
摘要翻译：提供替代的金属栅极结构及其制造方法。所述方法包括形成至少一个沟槽结构并在所述至少一个沟槽结构中形成高k电介质材料的衬垫。该方法还包括调整高k电介质材料的衬垫的高度。所述方法还包括在所述衬垫上形成至少一个功函数金属，以及在所述至少一个功函数金属和所述高k电介质材料的衬垫上，在所述至少一个沟槽结构中形成金属栅极结构。

7. 发明授权

US08426300B2 Self-aligned contact for replacement gate devices 有权
公开(公告)号：US08426300B2
公开(公告)日：2013-04-23
申请号：US12958607
申请日：2010-12-02
申请人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
发明人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
IPC分类号： H01L21/00
CPC分类号： H01L29/78 , H01L21/76895 , H01L21/76897 , H01L21/823842 , H01L21/823871 , H01L29/49 , H01L29/51 , H01L29/66545 , H01L29/66606 , H01L29/7833 , H01L29/7843
摘要： A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure.

8. 发明申请

US20130015580A1 REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE 有权
标题翻译：替代金属门结构和制造方法
公开(公告)号：US20130015580A1
公开(公告)日：2013-01-17
申请号：US13180842
申请日：2011-07-12
申请人： SAMEER H JAIN , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
发明人： SAMEER H JAIN , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28167 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L21/823864 , H01L29/165 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7843
摘要： A replacement metal gate structure and methods of manufacturing the same is provided. The method includes forming at least one trench structure and forming a liner of high-k dielectric material in the at least one trench structure. The method further includes adjusting a height of the liner of high-k dielectric material. The method further includes forming at least one workfunction metal over the liner, and forming a metal gate structure in the at least one trench structure, over the at least one workfunction metal and the liner of high-k dielectric material.
摘要翻译：提供替代的金属栅极结构及其制造方法。所述方法包括形成至少一个沟槽结构并在所述至少一个沟槽结构中形成高k电介质材料的衬垫。该方法还包括调整高k电介质材料的衬垫的高度。所述方法还包括在所述衬垫上形成至少一个功函数金属，以及在所述至少一个功函数金属和所述高k电介质材料的衬垫上，在所述至少一个沟槽结构中形成金属栅极结构。

9. 发明申请

US20220003626A1 LEAK DETECTION SYSTEM AND METHOD OF USE THEREOF 有权
公开(公告)号：US20220003626A1
公开(公告)日：2022-01-06
申请号：US16995955
申请日：2020-08-18
申请人： William Smith , Ying Li , Duncan Hywel-Evans
发明人： William Smith , Ying Li , Duncan Hywel-Evans
IPC分类号： G01M3/00
摘要： A leak detection system and method of use thereof is disclosed based on shock wave propagation in a fluid. In one form, the system includes at least one shock wave generator for introducing at least one shock wave signal into a fluid medium; at least one detector for detecting signals in the fluid medium; and at least one processor configured to identify excitation signals in the fluid medium caused by the at least one shock wave signal, wherein the identification of excitation signals is indicative of a fluid leak.

10. 发明授权

US09852430B2 Dynamic generation of advertisement text 有权
公开(公告)号：US09852430B2
公开(公告)日：2017-12-26
申请号：US11538309
申请日：2006-10-03
申请人： Ming Zhou , Cheng Niu , Zhaohui Tang , Ying Li , Chin-Yew Lin , Li Li , Brian Burdick
发明人： Ming Zhou , Cheng Niu , Zhaohui Tang , Ying Li , Chin-Yew Lin , Li Li , Brian Burdick
IPC分类号： G06Q30/00 , G06Q30/02
CPC分类号： G06Q30/02 , G06Q30/0242 , G06Q30/0255 , G06Q30/0261 , G06Q30/0269 , G06Q30/0276
摘要： Systems, methods, and computer-readable media for dynamically generating text associated with an advertisement are provided. Core text associated with an advertisement is received from an advertiser, as is at least one attribute relevant to the advertiser and/or a user. Based upon the received attribute(s), it is determined whether customization of the core text is desired. If customization is desired, the core text is modified and presented in association with the advertisement. If customization is not desired, the core text is presented in association with the advertisement. In one embodiment, target advertisement placement information may also be utilized to determine whether customization of the core text is desired.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式