专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09719165B2 Method of making ceramic glass 有权
公开(公告)号：US09719165B2
公开(公告)日：2017-08-01
申请号：US14663067
申请日：2015-03-19
申请人： Solar-Tectic, LLC , Ratnakar D. Vispute
发明人： Ratnakar D. Vispute , Ashok Chaudhari
IPC分类号： C23C8/00 , C23C14/08 , C23C14/18 , C03C17/00 , C23C14/02 , C23C14/06 , C23C14/10 , C23C14/58 , C30B23/00
CPC分类号： C23C14/082 , C03C17/00 , C03C17/3417 , C03C17/3435 , C03C2218/15 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/083 , C23C14/10 , C23C14/18 , C23C14/5853 , C30B23/00
摘要： A method is provided for manufacturing ceramic glass, including sapphire glass, for use in display covers in smartphones, computers, and watches, as well as for use as substrates on which semiconductor films can be deposited for a wide range of electronic applications, including solar cells, LEDs, and FETs.

2. 发明申请

US20150267289A1 METHOD OF MAKING CERAMIC GLASS 有权
标题翻译：制造陶瓷玻璃的方法
公开(公告)号：US20150267289A1
公开(公告)日：2015-09-24
申请号：US14663067
申请日：2015-03-19
申请人： Ratnakar D. Vispute , Solar-Tectic, LLC
发明人： Ratnakar D. Vispute , Ashok Chaudhari
IPC分类号： C23C14/08 , C23C14/18
CPC分类号： C23C14/082 , C03C17/00 , C03C17/3417 , C03C17/3435 , C03C2218/15 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/083 , C23C14/10 , C23C14/18 , C23C14/5853 , C30B23/00
摘要： A method is provided for manufacturing ceramic glass, including sapphire glass, for use in display covers in smartphones, computers, and watches, as well as for use as substrates on which semiconductor films can be deposited for a wide range of electronic applications, including solar cells, LEDs, and FETs.
摘要翻译：提供了用于制造陶瓷玻璃（包括蓝宝石玻璃）的方法，用于智能手机，计算机和手表中的显示器盖，以及用作可以将半导体膜沉积用于各种电子应用的基板，包括太阳能电池，LED和FET。

3. 发明授权

US09856578B2 Methods of producing large grain or single crystal films 有权
公开(公告)号：US09856578B2
公开(公告)日：2018-01-02
申请号：US14256619
申请日：2014-04-18
申请人： Ratnakar D. Vispute , Andrew Seiser
发明人： Ratnakar D. Vispute , Andrew Seiser
IPC分类号： C30B23/06 , C30B29/16 , C23C14/08 , C23C14/30 , C23C14/52 , C23C14/54
CPC分类号： C30B23/066 , C23C14/081 , C23C14/30 , C23C14/52 , C23C14/541 , C30B29/16
摘要： Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

4. 发明授权

US07084445B2 High-throughput thin-film fabrication vacuum flange 有权
标题翻译：高通量薄膜制造真空法兰
公开(公告)号：US07084445B2
公开(公告)日：2006-08-01
申请号：US10489922
申请日：2002-10-11
申请人： Ichiro Takeuchi , Russell W. Wood , Ratnakar D. Vispute
发明人： Ichiro Takeuchi , Russell W. Wood , Ratnakar D. Vispute
IPC分类号： H01L29/76
CPC分类号： C23C14/042 , C23C14/027 , C23C14/28
摘要： A mechanism and methodology is provided for performing high-throughput thin-film experimentation with the use and integration of a heater. A single flange assembly contains an automated two-dimensional shutter system (which provides variable masking schemes for spatially selective shadow deposition) and a rotatable (indexed) chip/wafer/substrate heater. The automated two-dimensional shutter system comprises two shutter plate mounts that move in two perpendicular (x and y) directions, so that mounted shutters overlap with each other in certain regions. The substrate heater can be used in the gradient temperature mode or uniform temperature mode. The shutter plates and the heater plate are detachable and exchangeable from experiment to experiment in order to minimize cross contamination of materials.
摘要翻译：提供了一种用于通过加热器的使用和集成进行高通量薄膜实验的机制和方法。单个法兰组件包含自动二维快门系统（其提供用于空间选择性阴影沉积的可变掩蔽方案）和可旋转（索引）芯片/晶片/基板加热器。自动二维快门系统包括两个在两个垂直（x和y）方向上移动的快门板安装件，使得安装的百叶窗在某些区域彼此重叠。基板加热器可用于梯度温度模式或均匀温度模式。挡板和加热板是可拆卸的，可从实验到实验交换，以尽量减少材料的交叉污染。

5. 发明授权

US07494546B1 Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices 有权
标题翻译：生长绝缘，半导体和导电III族氮化物薄膜和涂层的方法，并用作电子和光电器件的辐射硬涂层
公开(公告)号：US07494546B1
公开(公告)日：2009-02-24
申请号：US11879165
申请日：2007-07-16
申请人： Ratnakar D. Vispute , Evan Bertrue Jones
发明人： Ratnakar D. Vispute , Evan Bertrue Jones
IPC分类号： C30B25/12 , H01L21/20
CPC分类号： C23C14/30 , C23C14/0021 , C23C14/0617 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02614 , H01L21/02631 , H01L31/02167 , H01L31/041 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical properties. These films and their properties could be used for protecting electronic devices under space radiation applications such as solar cell operating in space.
摘要翻译：本发明描述了用于制造III族氮化物薄膜的电子束蒸发方法的应用。发现制造的薄膜具有期望的结晶和光学性质。这些膜及其性质可用于保护空间辐射应用下的电子器件，例如在太空中工作的太阳能电池。

6. 发明申请

US20170197887A1 METHOD OF ANNEALING CERAMIC GLASS BY LASER 审中-公开
公开(公告)号：US20170197887A1
公开(公告)日：2017-07-13
申请号：US15470161
申请日：2017-03-27
申请人： Ratnakar D. Vispute , Ashok Chaudhari
发明人： Ratnakar D. Vispute , Ashok Chaudhari
IPC分类号： C04B37/04 , C03C17/22
CPC分类号： C04B37/045 , C03C17/3417 , C03C17/3435 , C03C2218/32 , C04B2237/06 , C04B2237/30 , C04B2237/343 , C04B2237/704 , C04B2237/708 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/083 , C23C14/10 , C23C14/18 , C23C14/5853 , H01L33/007 , H01L33/22 , H01L51/0096
摘要： A method for annealing thin-films of ceramics such as Al2O3 on glass by laser such that the underlying glass substrate is unaffected by the laser heating. This is accomplished by applying a thin MgO buffer layer to the glass, depositing an amorphous ceramic layer on the textured transparent buffer layer, and annealing the ceramic layer with a heated line source. The ceramic layer crystallizing forming a ceramic coated substrate. The buffer layer is also textured which serves to induce texture in the Al2O3 film deposited on the buffer layer. The induced texture on the Al2O3 provides advantageous properties. The ceramic glass can be used for a variety of applications such as covers to solar panels, CICs used in satellites, displays, automobile windows, and substrates for LEDs.

7. 发明申请

US20140245947A1 METHODS OF PRODUCING LARGE GRAIN OR SINGLE CRYSTAL FILMS 有权
标题翻译：生产大颗粒或单晶层的方法
公开(公告)号：US20140245947A1
公开(公告)日：2014-09-04
申请号：US14256619
申请日：2014-04-18
申请人： Ratnakar D. Vispute , Andrew Seiser
发明人： Ratnakar D. Vispute , Andrew Seiser
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , C23C14/081 , C23C14/30 , C23C14/52 , C23C14/541 , C30B29/16
摘要： Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.
摘要翻译：通过电子束蒸发在普通的钠钙玻璃上沉积高度纹理的[111]取向膜如MgO结晶膜。诸如硅的半导体膜可以在低于普通玻璃的软化点的温度下使用共晶体沉积在这些MgO膜上并且具有非常高的织构和强度[111]取向。本发明可用于高效且具成本效益的太阳能电池，显示器等

8. 发明申请

US20170198386A1 METHOD OF MAKING CONDUCTING CERAMIC GLASS WITH TEXTURE AND SMOOTHNESS 审中-公开
公开(公告)号：US20170198386A1
公开(公告)日：2017-07-13
申请号：US15469962
申请日：2017-03-27
申请人： Ratnakar D. Vispute , Ashok Chaudhari
发明人： Ratnakar D. Vispute , Ashok Chaudhari
IPC分类号： C23C14/18 , C30B23/00 , C23C14/10 , C03C17/00 , C23C14/02
CPC分类号： C23C14/18 , C03C17/00 , C03C17/3417 , C03C17/3435 , C23C14/024 , C23C14/0641 , C23C14/083 , C23C14/10 , C23C14/5853 , C30B23/00
摘要： A method for making ceramic glass that is textured, hard, transparent and conducting, for use in various electronic devices and displays, such as LEDs, solar cells, the covers of solar panels, CICs used in satellites, smartphones, and computer displays. The ceramic glass can also be used for window shields in automobiles, and in any other industries where anti-scratch glass is beneficial. The ceramic glass is composed of ultra-thin layers which reduces the cost of manufacturing, and provides advantageous properties such as smoothness for stringent electronic device fabrication requirements. The method includes depositing a crystalline MgO film on a glass substrate at a temperature below the softening point of the glass, depositing a metal thin-film one nanometer at a time on said MgO film on the glass substrate at a similar temperature while keeping the substrate heated, wherein said MgO film is less than 1 micron thick, and said metal thin-film is less than 20 nanometers thick, and introducing O2 after each one nanometer layer of said metal thin film.

9. 发明授权

US07309644B2 System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays 有权
标题翻译：具有连续分级或离散物理参数的薄膜的制造和应用的系统和方法，用于功能宽带单片微电子光电/传感器/致动器器件阵列
公开(公告)号：US07309644B2
公开(公告)日：2007-12-18
申请号：US10998149
申请日：2004-11-29
申请人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar D. Vispute , Thirumalai Venky Venkatesan
发明人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar D. Vispute , Thirumalai Venky Venkatesan
IPC分类号： H01L21/20
CPC分类号： C23C14/08 , C23C14/0084
摘要： A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.
摘要翻译：提供了一种系统和方法来制造具有不同物理性质参数或具有在功能上宽带单片器件阵列上连续变化的物理性质参数的薄膜。制造方法将薄膜包括层沉积在单片芯片的基板上。该方法定义了形成薄膜的每个层的期望的梯度轮廓，每个梯度轮廓包括期望的最薄轮廓和期望的最厚轮廓。该方法进一步将掩模的孔径对准衬底上的孔径以形成薄膜，并且计算穿过衬底的期望区域的每层的指定梯度分布的快门速度，并通过孔径将每个层沉积在衬底上，因为快门的光圈以所计算的快门速度从每层的期望的最薄轮廓移动到每层的期望的最厚轮廓。

10. 发明申请

US20180370850A1 METHOD OF SIMULTANEOUSLY COATING AND TEMPERING GLASS AT HIGH TEMPERATURE 审中-公开
公开(公告)号：US20180370850A1
公开(公告)日：2018-12-27
申请号：US16047166
申请日：2018-07-27
申请人： Solar-Tectic. LLC , Blue Wave Semiconductors, Inc.
发明人： Ashok Chaudhari , Ratnakar D. Vispute
IPC分类号： C03C17/34 , C03C17/36
摘要： A method for simultaneously tempering and coating glass, including heating a glass substrate, depositing a textured buffer layer on the glass substrate, depositing a material on the buffer layer, depositing O2, and rapidly cooling the glass substrate by introducing a gas. This includes coating the glass substrate with crystalline sapphire or a low E film, for example.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式