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    • 1. 发明授权
    • Process of making a bistable photoconductive component
    • 制造双稳态光电导元件的工艺
    • US5374589A
    • 1994-12-20
    • US223350
    • 1994-04-05
    • Randy A. RoushMichael S. MazzolaDavid C. Stoudt
    • Randy A. RoushMichael S. MazzolaDavid C. Stoudt
    • G02B6/12G02B6/134H01L21/22H01L21/322H01L31/0304H01L31/08H01L31/18H01L21/223
    • H01L31/03042G02B6/1342H01L21/2215H01L21/3228H01L31/08H01L31/1864G02B2006/12169Y02E10/544Y02P70/521Y10S438/90Y10S438/919
    • Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550.degree. C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors in the wafer. Higher annealing temperatures are employed for higher concentrations of silicon in the wafers and the thermal diffusion is accomplished in the presence of copper, and in some instances, in the presence of varying quantities of arsenic. The copper compensated, silicon doped, gallium arsenide wafers obtained have the electrical property characteristic capability of being used as photoconductive switching components. In one aspect of the invention the silicon doped gallium arsenide wafer is sealed in a quartz ampoule in the presence of solid copper and solid arsenic and heated to the annealing temperature. In another aspect of the invention, the copper and arsenic are flowed as vapors over the silicon doped gallium arsenide wafer disposed in a reaction tube within a diffusion furnace, while the wafer is heated to the annealing temperature.
    • 用不同的硅密度浅供体制造的半绝缘砷化镓晶片通过加热到至少550℃的温度进行铜补偿,以将铜热扩散到晶片中,从而在晶片中提供深铜受主。 较高的退火温度用于晶片中较高浓度的硅,并且热扩散在铜的存在下实现,并且在一些情况下,在存在不同量的砷的情况下完成。 获得的铜补偿的硅掺杂砷化镓晶片具有用作光电导开关元件的电性能特性能力。 在本发明的一个方面,将硅掺杂的砷化镓晶片在固体铜和固体砷的存在下密封在石英安瓿中并加热至退火温度。 在本发明的另一方面,铜和砷作为蒸汽流过布置在扩散炉内的反应管中的硅掺杂砷化镓晶片上,同时将晶片加热至退火温度。