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1. 发明申请

US20050190812A1 Distributed bragg reflector for optoelectronic device 有权
标题翻译：光电器件分布式布拉格反射器
公开(公告)号：US20050190812A1
公开(公告)日：2005-09-01
申请号：US11119292
申请日：2005-04-29
申请人： Ralph Johnson , Klein Johnson , Jimmy Tatum , James Guenter , James Biard , Robert Hawthorne
发明人： Ralph Johnson , Klein Johnson , Jimmy Tatum , James Guenter , James Biard , Robert Hawthorne
IPC分类号： H01S5/183 , H01S5/42 , H01S3/08
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.
摘要翻译：本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于第二距离。此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。

2. 发明申请

US20050286594A1 Mirrors for reducing the effects of spontaneous emissions in photodiodes 有权
标题翻译：用于减少光电二极管中自发辐射影响的镜子
公开(公告)号：US20050286594A1
公开(公告)日：2005-12-29
申请号：US11026385
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

3. 发明申请

US20050286595A1 Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes 有权
标题翻译：优化镜面反射率，以减少光电二极管中的自发辐射
公开(公告)号：US20050286595A1
公开(公告)日：2005-12-29
申请号：US11027717
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

4. 发明申请

US20050286583A1 Obsorbing layers for reduced spontaneous emission effects in an integrated photodiode 有权
标题翻译：吸收层用于降低集成光电二极管中的自发发射效应
公开(公告)号：US20050286583A1
公开(公告)日：2005-12-29
申请号：US11026095
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3054 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

5. 发明申请

US20050286586A1 Geometric optimizations for reducing spontaneous emissions in photodiodes 有权
标题翻译：减少光电二极管自发辐射的几何优化
公开(公告)号：US20050286586A1
公开(公告)日：2005-12-29
申请号：US11027383
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/0422 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

6. 发明申请

US20050286585A1 Photodiode bandgaps for reducing spontaneous emissions in photodiodes 有权
标题翻译：用于减少光电二极管自发辐射的光电二极管带隙
公开(公告)号：US20050286585A1
公开(公告)日：2005-12-29
申请号：US11026495
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/0422 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子注入来降低光致发光效率。

7. 发明申请

US20050286584A1 Optical apertures for reducing spontaneous emissions in photodiodes 有权
标题翻译：用于减少光电二极管自发辐射的光学孔
公开(公告)号：US20050286584A1
公开(公告)日：2005-12-29
申请号：US11026355
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
IPC分类号： H01S5/00 , H01S5/026 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译：一种降低激光器有源区自发发射效应的光学结构。光学结构包括优化以减少自发辐射的影响。光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明，并使用离子植入物来降低光致发光效率。

8. 发明申请

US20060268954A1 LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION 有权
标题翻译：具有活动区域附近的电气限制障碍物的发光半导体器件
公开(公告)号：US20060268954A1
公开(公告)日：2006-11-30
申请号：US11461353
申请日：2006-07-31
申请人： Ralph Johnson , James Biard , James Guenter
发明人： Ralph Johnson , James Biard , James Guenter
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译：制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。相邻间隔层的铝含量低于限制屏障的铝含量。在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。铝型材降低了串联电阻并提高了半导体器件的效率。

9. 发明申请

US20070058976A1 LASER DRIVERS FOR CLOSED PATH OPTICAL CABLES 有权
标题翻译：激光驱动器关闭路径光纤
公开(公告)号：US20070058976A1
公开(公告)日：2007-03-15
申请号：US11470623
申请日：2006-09-06
申请人： Jimmy Tatum , James Guenter
发明人： Jimmy Tatum , James Guenter
IPC分类号： H04J14/08
CPC分类号： G02B6/4246 , G02B6/4201 , G09G5/006 , G09G2370/12 , G09G2370/18 , H01S5/0262 , H01S5/0425 , H01S5/18313 , H01S5/3095 , H04B10/801 , H04J14/08
摘要： Simplified laser drivers for closed path digital optical cables and digital optical cables including the simplified laser drivers. The laser driver can include less transistors than conventional laser drivers for optical communication cables. The laser can include a bias source and modulation source. The bias source can have a single constant current bias point for all laser diodes. The modulation current source can have a single temperature coefficient for all laser diodes. The laser driver can exclude, for example, any one of or combination of temperature compensation of the modulation or bias current sources, external programming of the modulation or bias current sources, power control based on output of the laser diode, and/or control based on feedback received from a monitor device or other sensor within the cables.
摘要翻译：用于闭路数字光缆和数字光缆的简化激光驱动器，包括简化的激光驱动器。激光驱动器可以包括比用于光通信电缆的传统激光驱动器更少的晶体管。激光器可以包括偏置源和调制源。偏置源可以为所有激光二极管提供单个恒定电流偏置点。调制电流源可以具有所有激光二极管的单一温度系数。激光驱动器可以例如排除调制或偏置电流源的温度补偿中的任何一种或组合，调制或偏置电流源的外部编程，基于激光二极管的输出的功率控制和/或基于在来自监视器装置或电缆内的其他传感器的反馈。

10. 发明申请

US20060263014A1 Attenuated barrel selection algorithms 有权
标题翻译：衰减桶选择算法
公开(公告)号：US20060263014A1
公开(公告)日：2006-11-23
申请号：US11130511
申请日：2005-05-17
申请人： Gary Landry , Norman Stapleton , James Guenter , Jimmy Tatum
发明人： Gary Landry , Norman Stapleton , James Guenter , Jimmy Tatum
IPC分类号： G02B6/36
CPC分类号： G02B6/4204
摘要： The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled and a parameter of the transmitter output can be measured. An optical barrel can be selected based on the measurement, wherein the optical barrel is selected based on an attenuation level to satisfy a range of a desired parameter value. The optical package and the optical barrel can be assembled. A system for assembling the optical device is also described.
摘要翻译：本发明涉及控制光发射机的光输出的参数。可以基于由光学封装输出的发射器的参数的衰减水平来选择光学封装。可以组装激光器和光学封装，并且可以测量发射器输出的参数。可以基于测量来选择光学镜筒，其中基于衰减水平来选择光学镜筒以满足期望的参数值的范围。可以组装光学封装和光学镜筒。还描述了用于组装光学装置的系统。

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