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    • 3. 发明授权
    • Optoelectronic component and method for the manufacture thereof
    • 光电子元件及其制造方法
    • US5875205A
    • 1999-02-23
    • US799494
    • 1997-02-12
    • Werner SpaethWolfgang GramannHans-Ludwig AlthausRalf Dietrich
    • Werner SpaethWolfgang GramannHans-Ludwig AlthausRalf Dietrich
    • H01L33/00H01S5/00H01S5/02H01S5/022H01S5/18H01S3/19
    • H01S5/02284H01S5/02292H01S5/0201H01S5/02248H01S5/0683
    • In an optoelectronic component having a laser chip as a light transmitter and a lens coupling optics for defined emission of radiation generated in the laser chip, the lens coupling optics is arranged immediately in front of the laser chip and is adjusted and fixed in stable fashion in a simple way. The component is rationally manufactured in a wafer union. The laser chip is arranged on a common carrier between two carrier parts whose lateral surfaces neighboring the resonator faces of the laser chip are provided with mirror layers, and that are inclined at an angle of 45.degree. relative to the resonator faces. Thus the radiation generated in the laser chip is directed nearly perpendicularly upward to the surface of the common carrier and the lens coupling optics is arranged on at least the one carrier part such that the radiation generated in the laser chip impinges this lens optics nearly perpendicularly.
    • 在具有作为光发射器的激光芯片和用于在激光芯片中产生的辐射的定义发射的透镜耦合光学器件的光电子部件中,透镜耦合光学器件被立即布置在激光器芯片的前面,并且以稳定的方式被调整和固定 一个简单的方法。 该组件在晶片联合中合理制造。 激光芯片布置在两个载体部件之间的公共载体上,其相对于激光芯片的谐振器面的侧表面设置有镜层,并且相对于谐振器面倾斜45度。 因此,在激光芯片中产生的辐射几乎垂直地向上引导到公共载体的表面,并且透镜耦合光学器件被布置在至少一个载体部分上,使得在激光器芯片中产生的辐射几乎垂直地撞击该透镜光学器件。
    • 4. 发明授权
    • Optoelectronic transducer formed of a semiconductor component and a lens
system
    • 由半导体元件和透镜系统形成的光电换能器
    • US5981945A
    • 1999-11-09
    • US614836
    • 1996-03-08
    • Werner SpaethWolfgang GramannGeorg BognerRalf Dietrich
    • Werner SpaethWolfgang GramannGeorg BognerRalf Dietrich
    • G02B6/42H01L31/0203H01L31/0232H01L33/58H01J5/02
    • H01L33/58G02B6/4204H01L31/0203H01L31/0232H01L2224/32225
    • An optoelectronic transducer includes a base plate, a radiation-emitting or transmitting semiconductor component disposed on the base plate, an optical lens system aimed at the semiconductor component and a spacer joined to the base plate for the lens system. The base plate, the spacer and the lens system are formed of materials with at least similar coefficients of thermal expansion. A method for producing an optoelectronic transducer includes forming indentations in a base plate for receiving semiconductor components, while leaving a land remaining on at least one side of each of the indentations. A first plate of the size of the base plate is placed on the lands and joined to the lands by material locking. The first plate is removed between the lands producing spacers joined to the base plate. A number of the semiconductor components are inserted into the indentations in accordance with a predetermined grid pattern and are joined to the base plate to form substrates. The substrates are covered with a second plate including a number of lens systems correspopnding to number of semiconductor components, while placing the lens systems of the second plate in the same grid pattern. The second plate is adjusted relative to the substrates for aiming each of the lens systems at a respective one of the semiconductor components. The second plate is secured to the substrates.
    • 光电转换器包括基板,设置在基板上的辐射发射或透射半导体部件,瞄准半导体部件的光学透镜系统和连接到透镜系统的基板的间隔件。 基板,间隔件和透镜系统由具有至少相似的热膨胀系数的材料形成。 一种光电子换能器的制造方法包括:在基板中形成用于接收半导体部件的凹陷部,同时留下残留在每个压痕的至少一侧上的焊盘。 基板的尺寸的第一板被放置在平台上,并通过材料锁定而接合到平台上。 第一板在连接到基板的间隔件之间移除。 根据预定的格栅图案将多个半导体部件插入到凹陷中,并且与基板接合以形成基板。 在将第二板的透镜系统放置在相同的格栅图案中的同时,用包括多个半导体部件的多个透镜系统的第二板覆盖基板。 相对于基板调整第二板,以将每个透镜系统瞄准相应的一个半导体部件。 第二板固定在基板上。
    • 6. 发明授权
    • Method for dry etching of a semiconductor substrate
    • 半导体衬底的干蚀刻方法
    • US5705025A
    • 1998-01-06
    • US539198
    • 1995-10-04
    • Ralf DietrichGerhard Franz
    • Ralf DietrichGerhard Franz
    • G02B6/124G02B3/00H01L21/00
    • G02B6/1245Y10S438/978
    • A method for dry etching of a semiconductor substrate includes producing convex structures on a surface of a semiconductor wafer by using a suitable masking and a suitable etchant. A thick photoresist layer is applied to a semiconductor wafer and structured. The structured photoresist layer is liquified by the influence of temperature to produce a spherical structure and is then hardened as an etchable masking. The semiconductor wafer structured with the photoresist layer is etched in plasma at etching speeds being similar for the semiconductor material and the photoresist, for transferring a convex structure of the photoresist layer to the semiconductor wafer, during etching down of the photoresist layer.
    • 用于干蚀刻半导体衬底的方法包括通过使用合适的掩模和合适的蚀刻剂在半导体晶片的表面上产生凸起结构。 将厚的光致抗蚀剂层施加到半导体晶片并构造。 结构化光致抗蚀剂层通过温度的影响而液化以产生球形结构,然后作为可蚀刻掩模进行硬化。 用蚀刻速度与半导体材料和光致抗蚀剂类似的蚀刻速度等离子体蚀刻由光致抗蚀剂层构成的半导体晶片,用于在蚀刻光致抗蚀剂层期间将光致抗蚀剂层的凸起结构转移到半导体晶片。