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1. 发明申请

US20060079085A1 Method for applying metal features onto metallized layers using electrochemical deposition 审中-公开
标题翻译：使用电化学沉积将金属特征施加到金属化层上的方法
公开(公告)号：US20060079085A1
公开(公告)日：2006-04-13
申请号：US11286084
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

2. 发明申请

US20060084264A1 Method for applying metal features onto metallized layers using electrochemical deposition and alloy treatment 审中-公开
标题翻译：使用电化学沉积和合金处理将金属特征应用于金属化层的方法
公开(公告)号：US20060084264A1
公开(公告)日：2006-04-20
申请号：US11292380
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘附的合适方法包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

3. 发明申请

US20060079084A1 Method for applying metal features onto metallized layers using electrochemical deposition and electrolytic treatment 审中-公开
标题翻译：使用电化学沉积和电解处理将金属特征施加到金属化层上的方法
公开(公告)号：US20060079084A1
公开(公告)日：2006-04-13
申请号：US11286007
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

4. 发明申请

US20060079083A1 Method for applying metal features onto metallized layers using electrochemical deposition using acid treatment 审中-公开
标题翻译：使用酸处理使用电化学沉积将金属特征施加到金属化层上的方法
公开(公告)号：US20060079083A1
公开(公告)日：2006-04-13
申请号：US11285993
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

5. 发明申请

US20050051436A1 Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density 有权
标题翻译：使用电化学沉积凹槽的亚微米金属化方法，其包括在第一电流密度下的第一沉积和以增加的电流密度的第二沉积
公开(公告)号：US20050051436A1
公开(公告)日：2005-03-10
申请号：US10882664
申请日：2004-07-01
申请人： Linlin Chen , Lyndon Graham , Thomas Ritzdorf , Dakin Fulton , Robert Batz
发明人： Linlin Chen , Lyndon Graham , Thomas Ritzdorf , Dakin Fulton , Robert Batz
IPC分类号： C25D5/02 , C25D5/10 , C25D5/18 , H01L21/288 , H01L21/768 , H05K3/00
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
摘要翻译：公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

6. 发明申请

US20060208272A1 Method for filling recessed micro-structures with metallization in the production of a microelectronic device 审中-公开
公开(公告)号：US20060208272A1
公开(公告)日：2006-09-21
申请号：US11439720
申请日：2006-05-23
申请人： Thomas Ritzdorf , Lyndon Graham
发明人： Thomas Ritzdorf , Lyndon Graham
IPC分类号： H01L33/00
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

7. 发明申请

US20110173918A1 ADJUSTABLE WALL BRACE 审中-公开
标题翻译：可调节的墙面
公开(公告)号：US20110173918A1
公开(公告)日：2011-07-21
申请号：US12689343
申请日：2010-01-19
申请人： Lyndon Graham
发明人： Lyndon Graham
IPC分类号： E04G21/26 , B23P17/00 , E04B1/38
CPC分类号： E04G21/26 , Y10T29/49623
摘要： An adjustable wall brace may include: (a) an adjustment portion including a right-hand threaded portion and a left-hand threaded portion; (b) an extension portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion; and (c) a base portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion.A method for manufacturing an adjustable wall brace may include: (a) disposing an extension member within an extension receiving member; (b) receiving a first threaded portion of a dual-threaded adjustment mechanism within a threaded receiving aperture of at least one of the extension member and the extension receiving member; and (c) receiving a second threaded portion of the dual-threaded adjustment within a second threaded receiving aperture.
摘要翻译：可调节的壁支架可以包括：（a）包括右旋螺纹部分和左旋螺纹部分的调节部分; （b）延伸部分，包括螺纹孔，构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个; 和（c）包括构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个的螺纹孔的基部。制造可调壁支架的方法可以包括：（a）在延伸容纳构件内设置延伸构件; （b）在所述延伸构件和所述延伸接收构件中的至少一个的螺纹接收孔内接收双螺纹调节机构的第一螺纹部分; 和（c）在第二螺纹接收孔内接收所述双螺纹调节件的第二螺纹部分。

8. 发明申请

US20070114133A1 Method for filling recessed micro-structures with metallization in the production of a microelectronic device 审中-公开
公开(公告)号：US20070114133A1
公开(公告)日：2007-05-24
申请号：US11593362
申请日：2006-11-06
申请人： Thomas Ritzdorf , Lyndon Graham
发明人： Thomas Ritzdorf , Lyndon Graham
IPC分类号： C25D7/12
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

9. 发明申请

US20220224023A1 Wire Nut Electrical Connector 有权
公开(公告)号：US20220224023A1
公开(公告)日：2022-07-14
申请号：US17351897
申请日：2021-06-18
申请人： Lyndon Graham , Tammy Graham
发明人： Lyndon Graham , Tammy Graham
IPC分类号： H01R4/22 , H01R4/12 , G01R15/12
摘要： This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

10. 发明申请

US20070215481A1 IN-SITU CLEANING PROCESSES FOR SEMICONDUCTOR ELECTROPLATING ELECTRODES 审中-公开
标题翻译：半导体电镀电极的现场清洁工艺
公开(公告)号：US20070215481A1
公开(公告)日：2007-09-20
申请号：US11694733
申请日：2007-03-30
申请人： Lyndon Graham , Thomas Ritzdorf , Jeffrey Turner
发明人： Lyndon Graham , Thomas Ritzdorf , Jeffrey Turner
IPC分类号： C25D7/12
CPC分类号： H01L21/67751 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/08 , H01L21/67126
摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.
摘要翻译：用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。将电极放置在电镀液中，并且具有相反极性的电流在电极和镀液之间通过。积聚在电极上的电镀沉积物电化学溶解并从电极中去除。

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