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1. 发明授权

US06774375B2 Method and apparatus for forming a curved polyline on a radiation-sensitive resist 失效
标题翻译：用于在辐射敏感抗蚀剂上形成弯曲折线的方法和装置
公开(公告)号：US06774375B2
公开(公告)日：2004-08-10
申请号：US09797861
申请日：2001-03-05
申请人： Rainer Plontke , Andreas Schubert , Michael Blume , Ines Stolberg
发明人： Rainer Plontke , Andreas Schubert , Michael Blume , Ines Stolberg
IPC分类号： B23K1500
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/30455 , H01J2237/31761
摘要： In a method for forming, with the aid of an electron beam (6), a polyline on a substrate (4) coated with a radiation-sensitive resist, the electron beam (6) is directed onto a surface of the substrate (4) in the direction of a Z coordinate, and the substrate (4) is displaced relative to the electron beam (6) in an X-Y plane in individual steps. After each individual step of the displacement, the electron beam (6) acts with a predefined energy input on the substrate (4) during a halt in the displacement motion. The energy input for each individual step is determined as a function of the shape of the polyline ascertained from several preceding individual steps. Also described is a corresponding apparatus with which, using electron beam lithography, it is possible to form polylines with a very uniform line width. The method and apparatus are particularly suitable for writing curved polylines.
摘要翻译：在用电子束（6）形成涂覆有辐射敏感抗蚀剂的衬底（4）上的折线的方法中，电子束（6）被引导到衬底（4）的表面上，在Z坐标的方向上，并且基板（4）在XY平面中相对于电子束（6）在各个步骤中移位。在位移的每个单独步骤之后，电子束（6）在位移运动停止期间以预定的能量输入作用在基板（4）上。根据从以前的几个步骤确定的折线的形状确定每个单独步骤的能量输入。还描述了使用电子束光刻技术的相应装置，可以形成具有非常均匀线宽的折线。该方法和装置特别适用于书写弯曲折线。

2. 发明授权

US07880152B2 Device and method for producing resist profiled elements 失效
标题翻译：用于制造抗蚀剂型材的装置和方法
公开(公告)号：US07880152B2
公开(公告)日：2011-02-01
申请号：US10599659
申请日：2005-03-30
申请人： Wittich Kaule , Rainer Plontke , Ines Stolberg , Andreas Schubert , Marius Dichtl
发明人： Wittich Kaule , Rainer Plontke , Ines Stolberg , Andreas Schubert , Marius Dichtl
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： G11B7/261 , B82Y10/00 , B82Y40/00 , G03F7/0005 , G03F7/0017 , G11B7/007 , H01J37/3174
摘要： The invention relates to a device and a method for producing resist profiled elements. According to the invention, an electron beam lithography system is used to produce an electron beam, the axis of the beam being essentially perpendicular to a resist layer in which the resist profiled element is to be produced. The electron beam can be adjusted in terms of the electron surface dose in such a way that a non-orthogonal resist profiled element can be produced as a result of the irradiation by the electron beam.
摘要翻译：本发明涉及一种用于制造抗蚀剂成型元件的装置和方法。根据本发明，使用电子束光刻系统来产生电子束，所述光束的轴线基本上垂直于要在其中产生抗蚀剂成型元件的抗蚀剂层。可以以电子表面剂量的方式调整电子束，使得由于电子束的照射可以产生非正交抗蚀剂成型元件。

3. 发明授权

US06635884B2 Method for directing an electron beam onto a target position on a substrate surface 失效
标题翻译：将电子束引导到基板表面上的目标位置的方法
公开(公告)号：US06635884B2
公开(公告)日：2003-10-21
申请号：US09797860
申请日：2001-03-05
申请人： Rainer Plontke , Ines Stolberg , Michael Blume , Rainer Kaebsch , Matthias Zierbock
发明人： Rainer Plontke , Ines Stolberg , Michael Blume , Rainer Kaebsch , Matthias Zierbock
IPC分类号： H01J37304
CPC分类号： H01J37/3045 , H01J2237/30438 , H01J2237/3175
摘要： The invention refers to the field of electron beam lithography, in particular to a method for directing an electron beam (6) onto a target position (Z) on the surface of a substrate, the substrate first being placed onto a movable stage (2) and the stage (2) then being displaced stepwise, in the X and/or Y coordinates of a Cartesian grid, until the target position (Z) is located at a spacing from the impact point (P) of the undeflected electron beam (6) which is smaller than the smallest step distance of the stage displacement system, and then the electron beam (6) is directed onto the target position (Z) by deflection. This results in a considerable increase in positioning accuracy in electron beam lithography. Positioning accuracies on the order of 0.1 nm to 0.05 are achievable. The method is suitable in particular for writing grating patterns in which the spacing between the individual grating lines must be maintained with high accuracy.
摘要翻译：本发明涉及电子束光刻领域，特别涉及一种将电子束（6）引导到衬底表面上的目标位置（Z）上的方法，该衬底首先被放置在可动平台（2）上，然后阶段（2）在笛卡尔网格的X和/或Y坐标中逐步移位，直到目标位置（Z）位于与未偏转的电子束（6）的冲击点（P）的间隔）小于级位移系统的最小步距，然后电子束（6）通过偏转被引导到目标位置（Z）上。这导致电子束光刻中定位精度的显着提高。定位精度可达0.1〜0.05。该方法特别适用于写入光栅图案，其中必须以高准确度保持单个光栅线之间的间隔。

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