专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06635884B2 Method for directing an electron beam onto a target position on a substrate surface 失效
标题翻译：将电子束引导到基板表面上的目标位置的方法
公开(公告)号：US06635884B2
公开(公告)日：2003-10-21
申请号：US09797860
申请日：2001-03-05
申请人： Rainer Plontke , Ines Stolberg , Michael Blume , Rainer Kaebsch , Matthias Zierbock
发明人： Rainer Plontke , Ines Stolberg , Michael Blume , Rainer Kaebsch , Matthias Zierbock
IPC分类号： H01J37304
CPC分类号： H01J37/3045 , H01J2237/30438 , H01J2237/3175
摘要： The invention refers to the field of electron beam lithography, in particular to a method for directing an electron beam (6) onto a target position (Z) on the surface of a substrate, the substrate first being placed onto a movable stage (2) and the stage (2) then being displaced stepwise, in the X and/or Y coordinates of a Cartesian grid, until the target position (Z) is located at a spacing from the impact point (P) of the undeflected electron beam (6) which is smaller than the smallest step distance of the stage displacement system, and then the electron beam (6) is directed onto the target position (Z) by deflection. This results in a considerable increase in positioning accuracy in electron beam lithography. Positioning accuracies on the order of 0.1 nm to 0.05 are achievable. The method is suitable in particular for writing grating patterns in which the spacing between the individual grating lines must be maintained with high accuracy.
摘要翻译：本发明涉及电子束光刻领域，特别涉及一种将电子束（6）引导到衬底表面上的目标位置（Z）上的方法，该衬底首先被放置在可动平台（2）上，然后阶段（2）在笛卡尔网格的X和/或Y坐标中逐步移位，直到目标位置（Z）位于与未偏转的电子束（6）的冲击点（P）的间隔）小于级位移系统的最小步距，然后电子束（6）通过偏转被引导到目标位置（Z）上。这导致电子束光刻中定位精度的显着提高。定位精度可达0.1〜0.05。该方法特别适用于写入光栅图案，其中必须以高准确度保持单个光栅线之间的间隔。

IPRDB

热门服务

关于我们

友情链接

联系方式