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1. 发明授权

US06715498B1 Method and apparatus for radiation enhanced supercritical fluid processing 有权
标题翻译：辐射增强超临界流体处理方法和装置
公开(公告)号：US06715498B1
公开(公告)日：2004-04-06
申请号：US10236613
申请日：2002-09-06
申请人： Raashina Humayun , Patrick Christopher Joyce , Vishal Gauri , Adrianne Kay Tipton
发明人： Raashina Humayun , Patrick Christopher Joyce , Vishal Gauri , Adrianne Kay Tipton
IPC分类号： B08B704
CPC分类号： H01L21/67115 , B08B7/0021 , B08B7/0057 , H01L21/6708 , Y10S134/902
摘要： A supercritical process vessel with an interior for holding a supercritical fluid is provided. A wafer support for supporting a wafer within the interior of a supercritical process vessel to expose the wafer to the supercritical fluid is provided. A lamp, which is able to operate at supercritical fluid pressures within the interior of the supercritical process vessel is provided.
摘要翻译：提供了一种具有用于保持超临界流体的内部的超临界加工容器。提供了用于将晶片支撑在超临界处理容器的内部以将晶片暴露于超临界流体的晶片支撑件。提供了能够在超临界流体容器内部的超临界流体压力下工作的灯。

2. 发明授权

US06800142B1 Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment 失效
标题翻译：使用活化的过氧化物，然后超临界流体处理去除光致抗蚀剂和蚀刻后残留物的方法
公开(公告)号：US06800142B1
公开(公告)日：2004-10-05
申请号：US10159951
申请日：2002-05-30
申请人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
发明人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
IPC分类号： B08B300
CPC分类号： H01L21/02101 , B08B3/08 , B08B7/0021 , B08B7/0057 , B08B7/04 , B08B2203/005 , C11D3/3947 , C11D11/0047 , G03F7/423 , G03F7/427 , H01L21/02063 , H01L21/31133 , Y10S438/906
摘要： Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.
摘要翻译：介绍了半导体晶圆清洗方法。从半导体晶片去除污染物，特别是光致抗蚀剂和蚀刻后残留物。首先用含过氧化物的介质处理晶片或晶片，例如氧化劈裂晶片工作表面上的污染物的结合结构。激发能量用于激活含过氧化物的介质以形成自由基物质。用含过氧化物的培养基处理后，使用超临界流体处理来除去任何剩余的污染物，以及调整晶片以用于随后的处理。

3. 发明授权

US06805801B1 Method and apparatus to remove additives and contaminants from a supercritical processing solution 有权
标题翻译：从超临界处理溶液中除去添加剂和污染物的方法和设备
公开(公告)号：US06805801B1
公开(公告)日：2004-10-19
申请号：US10099555
申请日：2002-03-13
申请人： Raashina Humayun , Patrick Christopher Joyce
发明人： Raashina Humayun , Patrick Christopher Joyce
IPC分类号： B01D1500
CPC分类号： B01J20/18 , B01D15/00 , B01J20/20 , B01J20/26 , B08B7/0021
摘要： The present invention pertains to methods and apparatus for removal of one or more solutes from a supercritical process solution. Solute additives and contaminants are removed from supercritical processing solutions via a contaminant removal system that is either part of the process vessel itself or is part of a local recirculation loop in fluid communication with the process vessel. This invention provides supercritical processing methods and apparatus for the removal of additives and contaminants during circulation so that depressurization and substrate removal can occur without contamination. The removal in some cases, for example cleaning residue, can be done continuously during a process to improve its efficiency. Removal mechanisms may include separation, destruction, conversion of the contaminant to acceptable species, or combinations thereof.
摘要翻译：本发明涉及从超临界流程溶液中除去一种或多种溶质的方法和装置。溶质添加剂和污染物通过污染物去除系统从超临界处理溶液中除去，污染物去除系统是处理容器本身的一部分，或者是与处理容器流体连通的局部再循环回路的一部分。本发明提供了在循环期间除去添加剂和污染物的超临界加工方法和装置，从而可以在不污染的情况下进行减压和基材去除。在某些情况下，例如清洁残留物的去除可以在改善其效率的过程中连续进行。去除机制可以包括分离，破坏，污染物转化为可接受物种，或其组合。

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