专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07572647B2 Internal balanced coil for inductively coupled high density plasma processing chamber 有权
标题翻译：用于电感耦合高密度等离子体处理室的内部平衡线圈
公开(公告)号：US07572647B2
公开(公告)日：2009-08-11
申请号：US11670728
申请日：2007-02-02
申请人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/00
CPC分类号： C23C16/507 , H01J37/321 , H01J37/32174 , H01L21/02164 , H01L21/02274 , H01L21/31604 , H01L21/31608
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.
摘要翻译：提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。线圈包括第一线圈段，第二线圈段和内部平衡电容器。第一线圈段具有第一端和第二端。线圈段的第一端适于连接到电源。第二线圈段具有第一和第二端。第一线圈段的第二端适于连接到外部平衡电容器。内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

2. 发明授权

US07789993B2 Internal balanced coil for inductively coupled high density plasma processing chamber 有权
标题翻译：用于电感耦合高密度等离子体处理室的内部平衡线圈
公开(公告)号：US07789993B2
公开(公告)日：2010-09-07
申请号：US11670662
申请日：2007-02-02
申请人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.
摘要翻译：提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。线圈包括第一线圈段，第二线圈段和内部平衡电容器。第一线圈段具有第一端和第二端。线圈段的第一端适于连接到电源。第二线圈段具有第一和第二端。第一线圈段的第二端适于连接到外部平衡电容器。内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

3. 发明申请

US20080188090A1 INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：US20080188090A1
公开(公告)日：2008-08-07
申请号：US11670701
申请日：2007-02-02
申请人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/31 , C23C16/452
CPC分类号： C23C16/507 , H01J37/321
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

4. 发明申请

US20080188087A1 INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
公开(公告)号：US20080188087A1
公开(公告)日：2008-08-07
申请号：US11670728
申请日：2007-02-02
申请人： ROBERT CHEN , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： ROBERT CHEN , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/507 , H01J37/321 , H01J37/32174 , H01L21/02164 , H01L21/02274 , H01L21/31604 , H01L21/31608
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

5. 发明申请

US20080185284A1 INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
标题翻译：用于感应耦合高密度等离子体加工室的内部平衡线圈
公开(公告)号：US20080185284A1
公开(公告)日：2008-08-07
申请号：US11670662
申请日：2007-02-02
申请人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
发明人： Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/3065 , C23C16/00 , H05F3/00
CPC分类号： H01J37/321
摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.
摘要翻译：提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。线圈包括第一线圈段，第二线圈段和内部平衡电容器。第一线圈段具有第一端和第二端。线圈段的第一端适于连接到电源。第二线圈段具有第一和第二端。第一线圈段的第二端适于连接到外部平衡电容器。内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

6. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

7. 发明申请

US20080142483A1 MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS 审中-公开
标题翻译：多级DEP-ETCH-DEP高密度等离子体化学气相沉积工艺用于电介质
公开(公告)号：US20080142483A1
公开(公告)日：2008-06-19
申请号：US11947619
申请日：2007-11-29
申请人： Zhong Qiang Hua , Rionard Purnawan , Jason Thomas Bloking , Anchuan Wang , Young S. Lee , Ellie Y. Yieh
发明人： Zhong Qiang Hua , Rionard Purnawan , Jason Thomas Bloking , Anchuan Wang , Young S. Lee , Ellie Y. Yieh
IPC分类号： B44C1/22
CPC分类号： C23C16/401 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31111 , H01L21/3145 , H01L21/31612
摘要： A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.
摘要翻译：描述了使用高密度等离子体在衬底间隙中形成电介质材料的方法。该方法可以包括将电介质材料的第一部分沉积到具有高密度等离子体的间隙中。沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。电介质材料的第一部分暴露于包括来自包括NH 3和N N 3 3的混合物的反应物质的蚀刻剂。蚀刻剂形成具有突出结构的固体反应产物，并且固体反应产物可以从基底上除去。介电材料的最终部分可以与高密度等离子体在间隙中沉积。

8. 发明授权

US07967913B2 Remote plasma clean process with cycled high and low pressure clean steps 失效
标题翻译：远程等离子清洁工艺，循环高低压清洁步骤
公开(公告)号：US07967913B2
公开(公告)日：2011-06-28
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

9. 发明授权

US07141138B2 Gas delivery system for semiconductor processing 有权
公开(公告)号：US07141138B2
公开(公告)日：2006-11-28
申请号：US10630989
申请日：2003-07-28
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

10. 发明授权

US07498268B2 Gas delivery system for semiconductor processing 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US07498268B2
公开(公告)日：2009-03-03
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式