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1. 发明授权

US5354428A Apparatus for the continuous on-site chemical reprocessing of ultrapure liquids 失效
标题翻译：用于超纯液体连续现场化学处理的设备
公开(公告)号：US5354428A
公开(公告)日：1994-10-11
申请号：US385302
申请日：1989-07-25
申请人： R. Scot Clark , Joe G. Hoffman , John B. Davison , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko , Alan H. Jones , Alan W. Jones
发明人： R. Scot Clark , Joe G. Hoffman , John B. Davison , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko , Alan H. Jones , Alan W. Jones
IPC分类号： B01D1/02 , B01D3/14 , B01D3/34 , B01D5/00 , C25B1/28 , B01D3/28
CPC分类号： B01D1/02 , B01D3/14 , B01D3/343 , B01D5/0006 , C25B1/285 , Y10S159/19 , Y10S203/02 , Y10S203/23
摘要： Method and apparatus for the distillation of liquids which is particularly suited for the removal of soluble impurities and insoluble and non-volatile particles of 10 microns to 0.2 micron or less in size. A substantially elongated distillation chamber having walls equipped with axially disposed concentric boiling rings spaced from the walls near the bottom, and a packing stop, packing redirector rings for condensed vapor, and a reflux condenser in the upper part of the distillation chamber provide, during distillation, a smooth convective upward flow of distilling liquid and vapor proximate the walls and boiling rings and a smooth convective downward flow of distilling liquid and vapor substantially centrally of the distillation chamber.
摘要翻译：用于蒸馏液体的方法和装置，其特别适用于去除可溶性杂质和尺寸为10微米至0.2微米或更小的不溶性和非挥发性颗粒。一个基本上细长的蒸馏室，其具有配备有与靠近底部的壁间隔开的轴向设置的同心沸腾环的壁，以及在蒸馏室的上部中的包装止挡件，用于冷凝蒸气的包装重定向环和在该蒸馏室上部的回流冷凝器，在壁和沸腾环附近蒸馏液体和蒸气的平滑对流向上流动，并且基本上在蒸馏室中心的蒸馏液体和蒸气的平滑对流向下流动。

2. 发明授权

US4855023A Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids used in semiconductor wafer cleaning 失效
标题翻译：用于半导体晶片清洗中使用的超纯液体的连续现场化学再处理的方法和装置
公开(公告)号：US4855023A
公开(公告)日：1989-08-08
申请号：US183089
申请日：1988-04-19
申请人： R. Scot Clark , Joe G. Hoffman , John B. Davison , Alan W. Jones , Allen H. Jones, Jr. , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko
发明人： R. Scot Clark , Joe G. Hoffman , John B. Davison , Alan W. Jones , Allen H. Jones, Jr. , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko
IPC分类号： B01D1/02 , B01D3/14 , B01D3/34 , B01D5/00 , C25B1/28
CPC分类号： B01D1/02 , B01D3/14 , B01D3/343 , B01D5/0006 , C25B1/285 , Y10S134/902
摘要： An improved wafer cleaning process wherein a novel oxidant solution comprising ultrapure sulfuric acid, peroxydisulfuric acid, and ultrapure water used in a semiconductor wafer cleaning process is continuously withdrawn after use. The withdrawn oxidant is reprocessed continuously by contacting with alumina to remove fluoride ions. Water is continuously separated or stripped from the oxidant solution by heating the solution and bubbling an inert gas therethrough. The separated oxidant is continuously distilled and condensed to form a purified stream of sulfuric acid. The major portion of this stream is continuously returned to the wafer cleaning process. The remaining minor portion is continuously cooled, subjected to analysis for purity, and diluted with ultrapure water prior to electrochemical treatment in the anode compartment of an electrochemical cell. This converts at least a portion of the dilute sulfuric acid to peroxydisulfuric acid. The resulting solution is continuously returned to the wafer cleaning process to be mixed with the major portion of the purified sulfuric acid.
摘要翻译：改进的晶片清洗方法，其中在半导体晶片清洗工艺中使用的包含超纯硫酸，过氧化二硫酸和超纯水的新型氧化剂溶液在使用后连续地取出。取出的氧化剂通过与氧化铝接触来连续再处理以除去氟离子。水通过加热溶液并通过惰性气体鼓泡而连续分离或从氧化剂溶液中汽提。分离的氧化剂被连续蒸馏和冷凝以形成纯化的硫酸流。该流的主要部分不断返回到晶片清洗过程。剩余的小部分被连续冷却，进行纯度分析，然后在电化学电池的阳极室进行电化学处理之前用超纯水稀释。这将至少一部分稀硫酸转化为过氧二硫酸。所得溶液连续返回到晶片清洗过程中，与纯化硫酸的主要部分混合。

3. 发明授权

US5164049A Method for making ultrapure sulfuric acid 失效
标题翻译：制造超纯硫酸的方法
公开(公告)号：US5164049A
公开(公告)日：1992-11-17
申请号：US571250
申请日：1990-08-22
申请人： R. Scot Clark , John B. Davison , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko , Alan W. Jones , Allen H. Jones, Jr. , Joe G. Hoffman
发明人： R. Scot Clark , John B. Davison , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko , Alan W. Jones , Allen H. Jones, Jr. , Joe G. Hoffman
IPC分类号： B01D1/02 , B01D3/14 , B01D3/34 , B01D5/00 , C25B1/28
CPC分类号： B01D1/02 , B01D3/14 , B01D3/343 , B01D5/0006 , C25B1/285 , Y10S203/02
摘要： Method for the production of ultrapure sulfuric acid including distillation of sulfuric acid material for the removal of soluble impurities and insoluble and non-volatile particles of 10 microns to 0.2 micron or less in size. Reprocessing is also provided. Distillation takes place in a distillation chamber having walls which are provided with means within the chamber to provide smooth convective upward flow of distilling liquid and vapor proximate the walls and means for smooth convective downward flow substantially centrally of the distillation chamber. Redirection means and packing together with reflux means insure the washing of rising vapor and direct the condensing vapor substantially centrally of the distillation chamber. Ultrapure sulfuric acid is also provided having 5 or less particles per cubic centimeter of a size of 0.5 micron and larger and less than 10 ppb of any specific trace impurity such as cations.
摘要翻译：包括蒸馏硫酸材料以除去可溶性杂质和尺寸为10微米至0.2微米或更小的不溶性和非挥发性颗粒的超纯硫酸的生产方法。还提供后处理。在蒸馏室中进行蒸馏，该蒸馏室具有在室内设置有装置的装置，以提供靠近壁的蒸馏液体和蒸汽的平滑对流向上流动，以及用于基本上在蒸馏室中心的平滑对流向下流动的装置。重新定向装置和包装与回流装置一起确保洗涤上升的蒸气并基本上在蒸馏室的中心引导冷凝蒸汽。还提供了超纯硫酸，其具有每立方厘米具有5个或更少颗粒的尺寸为0.5微米且大于10ppb的任何特定痕量杂质如阳离子的颗粒。

4. 发明授权

US4828660A Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids 失效
标题翻译：用于超纯液体连续现场化学处理的方法和设备
公开(公告)号：US4828660A
公开(公告)日：1989-05-09
申请号：US915776
申请日：1986-10-06
申请人： R. Scot Clark , Joe G. Hoffman , John B. Davison , Alan W. Jones , Allen H. Jones, Jr. , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko
发明人： R. Scot Clark , Joe G. Hoffman , John B. Davison , Alan W. Jones , Allen H. Jones, Jr. , David W. Persichini , Wallace I. Yuan , Bruce A. Lipisko
IPC分类号： H01L21/304 , B01D1/02 , B01D3/14 , B01D3/34 , B01D5/00 , C02F1/04 , C25B1/28
CPC分类号： B01D5/0006 , B01D1/02 , B01D3/14 , B01D3/343 , C25B1/285 , Y10S134/902
摘要： A continuous process and apparatus for the repurification of ultrapure liquids. An oxidant solution comprising ultrapure sulfuric acid, peroxydisulfuric acid, and ultrapure water is continuously withdrawn from a process after use. The withdrawn oxidant is reprocessed continuously by contacting with alumina to remove fluoride ions. Water is continuously separated or stripped from the oxidant solution by heating the solution and bubbling an inert gas therethrough causing the water to vaporize from the solution. The separated oxidant is continuously distilled and condensed to form a purified stream of sulfuric acid. The major portion of this stream is continuously returned to the process. The remaining minor portion is continuously cooled, subjected to analysis for purity, and diluted with ultrapure water. The diluted sulfuric acid is further cooled prior to electrochemical treatment in the anode compartment of an electrochemical cell. This converts at least a portion of the dilute sulfuric acid to peroxydisulfuric acid. The resulting solution is continuously returned to the process to be mixed with the major portion of the purified sulfuric acid. A system of apparatus to conduct the processes is provided which also includes means for continuously analyzing the minor portion for purity and trace elements.
摘要翻译：用于超纯液体再生的连续方法和设备。包含超纯硫酸，过氧二硫酸和超纯水的氧化剂溶液在使用后从工艺中连续取出。取出的氧化剂通过与氧化铝接触来连续再处理以除去氟离子。通过加热溶液并使惰性气体通过其中，使水从氧化剂溶液中连续分离或汽提，使得水从溶液中蒸发。分离的氧化剂被连续蒸馏和冷凝以形成纯化的硫酸流。该流的主要部分不断返回到该过程中。剩余的小部分被连续冷却，进行纯度分析，并用超纯水稀释。在电化学电池的阳极室中进行电化学处理之前，将稀硫酸进一步冷却。这将至少一部分稀硫酸转化为过氧二硫酸。所得溶液连续返回到与纯化硫酸的主要部分混合的过程中。提供了一种用于进行处理的装置的系统，其还包括用于连续分析次要部分以获得纯度和微量元素的装置。

5. 发明授权

US06214173B1 On-site manufacture of ultra-high-purity nitric acid 失效
标题翻译：现场制造超高纯度硝酸
公开(公告)号：US06214173B1
公开(公告)日：2001-04-10
申请号：US08759213
申请日：1996-12-05
申请人： Mindi Xu , Wallace I. Yuan , Tracey Jacksier , Hwa-Chi Wang , Joe G. Hoffman , R. Scot Clark
发明人： Mindi Xu , Wallace I. Yuan , Tracey Jacksier , Hwa-Chi Wang , Joe G. Hoffman , R. Scot Clark
IPC分类号： B01D300
CPC分类号： C01B21/46 , B01D3/143 , B01D3/34
摘要： Provided is a novel on-site system and method for providing ultra-high-purity nitric acid to a point of use. The system includes a source of nitric acid at a concentration greater than 68 wt %; a reflux distillation column having an inlet in communication with the nitric acid source for introducing nitric acid into the column, a reboiler, and a condensate outlet to provide a flow of nitric acid condensate from the column; a reservoir in communication with the condensate outlet for receiving the flow of nitric acid condensate; and piping for delivering nitric acid from the reservoir to a point of use. The system and method can be used as an on-site subsystem, in a semiconductor device fabrication facility for supplying the nitric acid condensate to points of use in the semiconductor device fabrication facility.
摘要翻译：提供了一种用于在使用点提供超高纯度硝酸的新型现场系统和方法。该系统包括浓度大于68重量％的硝酸源; 回流蒸馏塔，其具有与硝酸源连通以将硝酸引入塔中的入口，再沸器和冷凝物出口，以从塔中提供硝酸冷凝物流; 与冷凝水出口连通的用于接收硝酸冷凝物流的储存器; 以及用于将硝酸从储存器输送到使用点的管道。该系统和方法可以用作半导体器件制造设备中的现场子系统，用于将硝酸冷凝物供应到半导体器件制造设备中的使用点。

6. 发明授权

US5846387A On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing 失效
标题翻译：现场制造用于半导体加工的超高纯度盐酸
公开(公告)号：US5846387A
公开(公告)日：1998-12-08
申请号：US673579
申请日：1996-07-01
申请人： Joe G. Hoffman , R. Scot Clark
发明人： Joe G. Hoffman , R. Scot Clark
IPC分类号： C01B7/07 , C01B7/19 , C01C1/02 , C01C1/16 , H01L21/00 , B01D3/00 , B01D45/00
CPC分类号： C01B7/0706 , C01B7/0712 , C01B7/0731 , C01B7/195 , C01B7/196 , C01B7/198 , C01C1/024 , C01C1/162 , H01L21/67023
摘要： Highly purified HCl for use in semiconductor manufacturing is prepared on-site by drawing HCl vapor from a liquid HCl reservoir, and scrubbing the filtered vapor in a low-pH aqueous scrubber.
摘要翻译：通过从液体HCl储存器中抽取HCl蒸汽，并在低pH水性洗涤器中洗涤过滤的蒸气，现场制备用于半导体制造的高纯度HCl。

7. 发明授权

US6063356A On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing 失效
标题翻译：现场制造用于半导体加工的超高纯度氢氟酸
公开(公告)号：US6063356A
公开(公告)日：2000-05-16
申请号：US34004
申请日：1998-03-03
申请人： Joe G. Hoffman , R. Scot Clark
发明人： Joe G. Hoffman , R. Scot Clark
IPC分类号： C01B7/07 , C01B7/19 , C01C1/02 , C01C1/16 , H01L21/00
CPC分类号： C01B7/0706 , C01B7/0712 , C01B7/0731 , C01B7/195 , C01B7/196 , C01B7/198 , C01C1/024 , C01C1/162 , H01L21/67023
摘要： A system for purification and generation of hydrofluoric acid on-site at a semiconductor device fabrication facility. An evaporation stage (optionally with arsenic oxidation) is followed by a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
摘要翻译：一种用于在半导体器件制造设备上现场纯化和产生氢氟酸的系统。蒸发阶段（任选具有砷氧化）之后是分馏塔以除去大多数其他杂质，即离子净化柱，以抑制未经分馏塔除去的污染物，最后是HF供应商（HFS）。

8. 发明授权

US5722442A On-site generation of ultra-high-purity buffered-HF for semiconductor processing 失效
标题翻译：现场生产用于半导体加工的超高纯度缓冲HF
公开(公告)号：US5722442A
公开(公告)日：1998-03-03
申请号：US674130
申请日：1996-07-01
申请人： Joe G. Hoffman , R. Scot Clark
发明人： Joe G. Hoffman , R. Scot Clark
IPC分类号： C01B7/07 , C01B7/19 , C01C1/02 , C01C1/16 , H01L21/00 , B08B3/10
CPC分类号： C01B7/0706 , C01B7/0712 , C01B7/0731 , C01B7/195 , C01B7/196 , C01B7/198 , C01C1/024 , C01C1/162 , H01L21/67023 , Y10S134/902 , Y10S210/90
摘要： A process for preparing ultra-high-purity buffered hydrofluoric acid on-site at a semiconductor manufacturing facility (front end). Anhydrous ammonia is purified by scrubbing in a high-pH liquor, and then combined with high-purity aqueous HF which has been purified by a similar process. The generation is monitored by a density measurement to produce an acid whose pH and buffering are accurately controlled.
摘要翻译：在半导体制造设备（前端）现场制备超高纯度缓冲氢氟酸的方法。无水氨通过在高pH液中洗涤纯化，然后与已经通过类似方法纯化的高纯度HF水溶液合并。通过密度测量监测该代，以产生其pH和缓冲被精确控制的酸。

9. 发明授权

US6050283A System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing 失效
标题翻译：用于半导体加工的超高纯度化学品的现场混合系统和方法
公开(公告)号：US6050283A
公开(公告)日：2000-04-18
申请号：US51304
申请日：1998-04-16
申请人： Joe G. Hoffman , R. Scot Clark , Allen H. Jones, Jr.
发明人： Joe G. Hoffman , R. Scot Clark , Allen H. Jones, Jr.
IPC分类号： G05D11/13
CPC分类号： G05D11/135
摘要： A system and method for mixing and/or diluting ultrapure fluids, such as liquid acids, for semiconductor processing. The system includes first and second chemical dispensers, the first and second chemical dispensers adapted to contain first and second fluids to be mixed, respectively; a process connection between the first and second chemical dispensers which allows the first and second fluids to flow therethrough and intermingle to form a mixed fluid, the process connection further allowing the mixed fluid to flow to a location needed by the operator; and an ultrasonic wave emitting device provided in a location sufficient to transmit an ultrasonic wave through the mixed fluid, the device including means to measure the velocity of the wave through the mixed fluid, and thus indirectly measure a ratio defined by a quantity of the first chemical to a quantity of the second chemical in the mixed fluid.
摘要翻译： PCT No.PCT / US96 / 10389 Sec。 371日期：1998年4月16日 102（e）1998年4月16日PCT PCT 1996年6月5日PCT公布。公开号WO96 / 39651 日期：1996年12月12日用于混合和/或稀释超纯液体如液体酸的半导体加工方法。该系统包括第一和第二化学分配器，第一和第二化学分配器分别适于容纳待混合的第一和第二流体; 所述第一和第二化学分配器之间的过程连接允许第一和第二流体流过并混合以形成混合流体，所述过程连接进一步允许混合流体流动到操作者所需的位置; 以及超声波发射装置，其设置在足以通过混合流体传送超声波的位置，所述装置包括测量通过混合流体的波速的装置，从而间接测量由第一与混合流体中的第二化学品的量化学。

10. 再颁专利

USRE36290E Manufacture of high precision electronic components with ultra-high purity liquids 失效
公开(公告)号：USRE36290E
公开(公告)日：1999-09-07
申请号：US524691
申请日：1995-09-07
申请人： R. Scot Clark , Stephen S. Baird , Joe G. Hoffman
发明人： R. Scot Clark , Stephen S. Baird , Joe G. Hoffman
IPC分类号： B01D53/22 , B08B3/14 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/64
CPC分类号： H01L21/67023 , Y10S134/902 , Y10T29/41
摘要： Semiconductor wafers and other electronic parts which similarly require ultra-high purity manufacturing environments are treated with ultra-high purity liquid cleaning and etching agents prepared at the site of use from gaseous raw materials which have been purified to a level compatible with semiconductor manufacturing standards, combined when appropriate with ultra-pure water.

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