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1. 发明申请

US20100133550A1 STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS 有权
标题翻译：低角度切割碳化硅晶体上的稳定电源设备
公开(公告)号：US20100133550A1
公开(公告)日：2010-06-03
申请号：US12622861
申请日：2009-11-20
申请人： Qingchun Zhang , Anant Agarwal , Doyle Craig Capell , Albert Burk , Joseph Sumakeris , Michael O'Loughlin
发明人： Qingchun Zhang , Anant Agarwal , Doyle Craig Capell , Albert Burk , Joseph Sumakeris , Michael O'Loughlin
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： C30B29/36 , C30B23/02 , C30B25/20 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/1608 , H01L29/73 , H01L29/7395 , H01L29/744 , H01L29/861 , H01L29/872
摘要： A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°.
摘要翻译：基于碳化硅的功率器件包括碳化硅漂移层，其具有形成小于8°的<0001>方向的离轴角的平坦表面。

2. 发明授权

US08536582B2 Stable power devices on low-angle off-cut silicon carbide crystals 有权
标题翻译：稳定的功率器件在低角度切割碳化硅晶体
公开(公告)号：US08536582B2
公开(公告)日：2013-09-17
申请号：US12622861
申请日：2009-11-20
申请人： Qingchun Zhang , Anant Agarwal , Doyle Craig Capell , Albert Burk , Joseph Sumakeris , Michael O'Loughlin
发明人： Qingchun Zhang , Anant Agarwal , Doyle Craig Capell , Albert Burk , Joseph Sumakeris , Michael O'Loughlin
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/02 , C30B25/20 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/1608 , H01L29/73 , H01L29/7395 , H01L29/744 , H01L29/861 , H01L29/872
摘要： A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°.
摘要翻译：基于碳化硅的功率器件包括碳化硅漂移层，其具有形成小于8°的<0001>方向的离轴角的平坦表面。

3. 发明申请

US20080054412A1 REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY 有权
标题翻译：减少碳化硅外壳中的卡扣缺陷
公开(公告)号：US20080054412A1
公开(公告)日：2008-03-06
申请号：US11745817
申请日：2007-05-08
申请人： Michael O'Loughlin , Joseph Sumakeris
发明人： Michael O'Loughlin , Joseph Sumakeris
IPC分类号： H01L29/04 , H01L21/36
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
摘要翻译：通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。生长中断/蚀刻/再生长可以重复多次。碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。半导体狭缝包括在离轴碳化硅衬底上的碳化硅外延层和胡萝卜缺陷，其具有在衬底和外延层之间的界面附近的成核点并终止在外延层内。

4. 发明申请

US20070108450A1 REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY 有权
标题翻译：减少碳化硅外壳中的卡扣缺陷
公开(公告)号：US20070108450A1
公开(公告)日：2007-05-17
申请号：US10790406
申请日：2004-03-01
申请人： Michael O'Loughlin , Joseph Sumakeris
发明人： Michael O'Loughlin , Joseph Sumakeris
IPC分类号： H01L31/0312 , H01L21/302 , H01L29/15
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor structure includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
摘要翻译：通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。生长中断/蚀刻/再生长可以重复多次。碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。半导体结构包括在偏轴碳化硅衬底上的碳化硅外延层和在衬底和外延层之间的界面附近具有成核点的胡萝卜缺陷，并且终止在外延层内。

5. 发明申请

US20070101939A1 Deposition systems and susceptor assemblies for depositing a film on a substrate 有权
标题翻译：用于在衬底上沉积膜的沉积系统和感受器组件
公开(公告)号：US20070101939A1
公开(公告)日：2007-05-10
申请号：US11512800
申请日：2006-08-29
申请人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
发明人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
摘要翻译：寄生沉积物被控制在用于在基底上沉积膜的沉积系统中，这种类型的沉积系统限定用于接收基底的反应室，并且在反应室中包括处理气体和与反应室邻接的内表面。通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制，使得气体阻隔层抑制处理气体的内表面和组分之间的接触。用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。该系统还包括与反应室邻接的内表面。缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流，使得缓冲气体的流动形成阻气层，以阻止内表面和部件之间的接触当处理气体设置在反应室中时，该工艺气体。

6. 发明申请

US20070065577A1 Directed reagents to improve material uniformity 有权
标题翻译：定向试剂，以提高材料均匀性
公开(公告)号：US20070065577A1
公开(公告)日：2007-03-22
申请号：US11224374
申请日：2005-09-12
申请人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
发明人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/45514 , C23C16/45563 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/36
摘要： A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
摘要翻译：提供了一种用于局部控制半导体衬底上的外延沉积层的化学计量的方法。该方法包括：引导第一反应气体和掺杂气体穿过半导体衬底的顶表面，并将驱动气体和第二反应气体以与第一反应气体分离的方式引导基板，同时引导第二反应气体在衬底的边缘处的反应气体，以分别控制每个反应物，由此补偿和控制耗尽效应并改善衬底上所得到的外延层中的掺杂均匀性。

7. 发明申请

US20060216416A1 METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME 有权
标题翻译：用于控制沉积系统中沉积物形成的方法和包括其的沉积方法
公开(公告)号：US20060216416A1
公开(公告)日：2006-09-28
申请号：US10414787
申请日：2003-04-16
申请人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
发明人： Joseph Sumakeris , Michael Paisley , Michael O'Loughlin
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
摘要翻译：一种用于控制用于在衬底上沉积膜的沉积系统中的寄生沉积物的方法，所述沉积系统限定用于接收衬底并在反应室中包括工艺气体和与反应室邻接的内表面的反应室，包括流动在所述内表面和所述处理气体的至少一部分之间形成缓冲气体，以形成阻气层，使得所述阻气层抑制所述内表面和所述工艺气体的组分之间的接触。

8. 发明申请

US20050045895A1 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US20050045895A1
公开(公告)日：2005-03-03
申请号：US10963666
申请日：2004-10-13
申请人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
发明人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱结构。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0 <= X <1且0 <= Y <1，X 不等于Y.半导体器件可以是具有基于III族氮化物的有源区的发光二极管。有源区可以是多量子阱有源区。

9. 发明申请

US20070019446A1 PFC PRE-REGULATOR FREQUENCY DITHERING CIRCUIT 有权
标题翻译： PFC预调速器频率电路
公开(公告)号：US20070019446A1
公开(公告)日：2007-01-25
申请号：US11210032
申请日：2005-08-23
申请人： Michael O'Loughlin
发明人： Michael O'Loughlin
IPC分类号： H02M1/12
CPC分类号： H02M1/12 , H02M1/42 , Y02B70/12 , Y02P80/112
摘要： A circuit and method of dithering the switching frequency of an off-line power factor corrected (PFC) pre-regulator. The circuitry used to dither the frequency is advantageously accomplished by taking advantage of the PWM's internal timing circuitry. This invention reduces narrow band EMI and eliminates the need to provide specialty PWM controllers to achieve dithering.
摘要翻译：一种使离线功率因数校正（PFC）预调节器的开关频率抖动的电路和方法。用于抖动频率的电路有利地通过利用PWM的内部定时电路实现。本发明减小了窄带EMI，并且不需要提供特殊的PWM控制器来实现抖动。

10. 发明申请

US20080038858A1 METHODS OF FABRICATING GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES 有权
标题翻译：基于III型氮化物的发光二极管结构的方法，其具有量子阱和超导体，基于III类氮化物的量子结构和基于III类氮化物的超导结构
公开(公告)号：US20080038858A1
公开(公告)日：2008-02-14
申请号：US11875353
申请日：2007-10-19
申请人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
发明人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱狭窄。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光二极管与III族氮化物基活性区。有源区可以是多量子阱有源区。

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