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    • 2. 发明授权
    • Memory device
    • 内存设备
    • US08804438B2
    • 2014-08-12
    • US13567035
    • 2012-08-04
    • Ashish SharmaAmit Kumar Gupta
    • Ashish SharmaAmit Kumar Gupta
    • G11C7/10
    • G11C7/06G11C7/08G11C7/227
    • A memory device that accurately tracks memory operations includes a vertical loopback for tracking a sense clock signal to a row address decoder, and read and write reference bit lines in a reference column that include loopbacks for vertically tracking a selected bit line during read and write operations. Preferably the widths of word lines and a sense line are equal to enable the sense line to horizontally track any selected word line. The memory device also includes tri-state input/output (I/O) latches to latch sense amplifier outputs. A drive circuit of the tri-state I/O latch is disabled when the output is available at the corresponding sense amplifier and enabled when the output is latched by the latch circuit.
    • 准确跟踪存储器操作的存储器件包括用于跟踪到行地址解码器的检测时钟信号的垂直环回,以及在包括用于在读取和写入操作期间垂直跟踪选定位线的环回的参考列中读取和写入参考位线 。 优选地,字线和感测线的宽度等于使得感测线能够水平地跟踪任何所选择的字线。 存储器件还包括用于锁存读出放大器输出的三态输入/输出(I / O)锁存器。 当输出在相应的读出放大器可用时,三态I / O锁存器的驱动电路被禁止,并且当输出被锁存电路锁存时使能。