专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090294883A1 METHOD FOR ELECTRONICALLY PINNING A BACK SURFACE OF A BACK-ILLUMINATED IMAGER FABRICATED ON A UTSOI WAFER 有权
标题翻译：在UTSOI WAFER上制造背面照明图像的背面电子密封方法
公开(公告)号：US20090294883A1
公开(公告)日：2009-12-03
申请号：US12466795
申请日：2009-05-15
申请人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
IPC分类号： H01L31/101 , H01L31/18 , H01L21/30
CPC分类号： H01L27/14687 , H01L21/84 , H01L27/1464
摘要： A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.
摘要翻译：公开了一种制造具有固定后表面的背照式成像器的方法。第一绝缘体层形成在机械衬底上。沉积覆盖在第一绝缘体层上的导电层。形成第二绝缘体层，覆盖在导电层上以形成第一结构，在导电层和第二绝缘体层之间形成界面，导电层使接近端面的带弯曲使得电接头被固定。将氢气注入单独的器件晶片中以形成气泡层。形成覆盖在器件晶片上的最终绝缘体层以形成第二结构。第一结构和第二结构被结合以形成组合晶片。组合的晶片的一部分被移除到气泡层下方，以暴露包含半导体材料的晶种层，其基本上覆盖在第二绝缘体层上。

2. 发明授权

US09520441B2 Method for electronically pinning a back surface of a back-illuminated imager fabricated on a UTSOI wafer 有权
标题翻译：用于电子固定在UTSOI晶片上制造的背照式成像器的背面的方法
公开(公告)号：US09520441B2
公开(公告)日：2016-12-13
申请号：US12466795
申请日：2009-05-15
申请人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
IPC分类号： H01L27/14 , H01L27/146 , H01L21/84
CPC分类号： H01L27/14687 , H01L21/84 , H01L27/1464
摘要： A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.
摘要翻译：公开了一种制造具有固定后表面的背照式成像器的方法。第一绝缘体层形成在机械衬底上。沉积覆盖在第一绝缘体层上的导电层。形成第二绝缘体层，覆盖在导电层上以形成第一结构，在导电层和第二绝缘体层之间形成界面，导电层使接近端面的带弯曲使得电接头被固定。将氢气注入单独的器件晶片中以形成气泡层。形成覆盖在器件晶片上的最终绝缘体层以形成第二结构。第一结构和第二结构被结合以形成组合晶片。组合的晶片的一部分被移除到气泡层下方，以暴露包含半导体材料的晶种层，其基本上覆盖在第二绝缘体层上。

3. 发明授权

US08178914B2 Method of fabricating back-illuminated imaging sensors 有权
标题翻译：制造背照式成像传感器的方法
公开(公告)号：US08178914B2
公开(公告)日：2012-05-15
申请号：US12579623
申请日：2009-10-15
申请人： Peter Alan Levine , Pradyumna Kumar Swain , Mahalingam Bhaskaran
发明人： Peter Alan Levine , Pradyumna Kumar Swain , Mahalingam Bhaskaran
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1464 , H01L27/1214 , H01L27/1266 , H01L27/14645 , H01L27/14683 , H01L2224/48463
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The substrate includes an insulator layer and an epitaxial layer overlying the insulator layer. A bond pad region is formed extending into the epitaxial layer to a surface of the insulator layer. A bond pad is fabricated partially overlying the bond pad region. At least one imaging component is fabricated partially overlying and extending into the epitaxial layer. A passivation layer is fabricated overlying the epitaxial layer, the bond pad, and the at least one imaging component. A handle wafer is bonded to the passivation layer. A portion of the insulator layer and a portion of the bond pad region is etched to expose a portion of the bond pad.
摘要翻译：公开了一种在绝缘体上半导体衬底上制造背照式半导体成像器件的方法。衬底包括绝缘体层和覆盖绝缘体层的外延层。形成延伸到外延层中的接合焊盘区域到绝缘体层的表面。部分覆盖接合焊盘区域的接合焊盘。至少一个成像部件被部分地覆盖并延伸到外延层中。制造覆盖外延层，接合焊盘和至少一个成像部件的钝化层。处理晶片结合到钝化层。绝缘体层的一部分和接合焊盘区域的一部分被蚀刻以暴露接合焊盘的一部分。

4. 发明授权

US07547622B2 Fabrication of CCD image sensors using single layer polysilicon 有权
标题翻译：使用单层多晶硅制造CCD图像传感器
公开(公告)号：US07547622B2
公开(公告)日：2009-06-16
申请号：US11867064
申请日：2007-10-04
申请人： Pradyumna Kumar Swain , David Arthur Furst , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , David Arthur Furst , Mahalingam Bhaskaran
IPC分类号： H01L21/3205 , H01L31/062
CPC分类号： H01L27/14603
摘要： A method for fabricating CCD imaging structures is disclosed, comprising the steps of providing a silicon substrate; growing a dielectric layer substantially overlying the silicon substrate; depositing a first layer of polysilicon substantially overlaying the dielectric layer; removing at least a portion of the first layer of polysilicon to form a plurality of polysilicon gates and first predetermined inter-gate gaps, each of plurality of the polysilicon gates having a predetermined line width; depositing a second layer of polysilicon of a predetermined thickness substantially overlaying the plurality of polysilicon gates and the first predetermined inter-gate gaps; removing at least a portion of the second layer of polysilicon from between gates of the plurality of polysilicon gates to define a plurality of non-overlapping polysilicon gates and second predetermined inter-gate gaps that expose the dielectric layer, the second predetermined inter-gate gaps being smaller than the first predetermined inter-gate gaps.
摘要翻译：公开了一种用于制造CCD成像结构的方法，包括提供硅衬底的步骤; 生长基本上覆盖硅衬底的电介质层; 沉积基本覆盖在介电层上的第一多晶硅层; 去除所述第一多晶硅层的至少一部分以形成多个多晶硅栅极和第一预定栅极间隙，所述多晶硅栅极中的每一个具有预定的线宽; 沉积基本覆盖多个多晶硅栅极和第一预定栅间间隙的预定厚度的第二多晶硅层; 从所述多个多晶硅栅极之间的栅极之间去除所述第二多晶硅层的至少一部分，以限定多个非重叠多晶硅栅极和暴露所述介电层的所述第二预定栅极间隙，所述第二预定栅极间间隙小于第一预定的栅间间隙。

5. 发明授权

US07804113B2 Anti-blooming structures for back-illuminated imagers 有权
标题翻译：背光照明成像器的防起霜结构
公开(公告)号：US07804113B2
公开(公告)日：2010-09-28
申请号：US11850250
申请日：2007-09-05
申请人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14887 , H01L27/1464 , H01L27/14683 , H01L27/14843
摘要： An anti-blooming structure for a back-illuminated imager is disclosed. In one embodiment, the anti-blooming structure is formed in a substrate of a first conductivity type having a back side and a front side, comprising a channel region of a second conductivity type formed in the substrate; a barrier region of the first conductivity type positioned in the substrate substantially overlying the channel region and proximal to the front side of the substrate; and a drain region of the second conductivity type positioned substantially overlying the barrier region, wherein when light impinges on the back side of the substrate the light generates charge carriers that collect in the channel region, the charge carriers passing through the barrier region into the drain region when a potential corresponding to the collected charge carriers in the channel region is about equal to the potential corresponding to the barrier region. In a second embodiment, a drain region of the second conductivity type is positioned substantially extending into at least a portion of the front side of the substrate; a barrier region of the first conductivity type positioned substantially underlying about the drain region; and a channel region of the second conductivity type positioned substantially underlying and about the barrier region. The channel region, the barrier region, and the drain region are formed by ion implantation.
摘要翻译：公开了一种用于背照式成像器的抗起霜结构。在一个实施例中，抗起霜结构形成在具有背侧和前侧的第一导电类型的衬底中，包括形成在衬底中的第二导电类型的沟道区; 所述第一导电类型的屏障区域位于所述基板中，基本上覆盖所述沟道区域并且靠近所述衬底的前侧; 以及第二导电类型的漏极区域，其基本上覆盖在所述阻挡区域上，其中当光照射在所述衬底的背面上时，所述光产生在所述沟道区域中聚集的电荷载流子，所述电荷载流子穿过所述势垒区域进入所述漏极当与通道区域中的所收集的电荷载流子相对应的电位大约等于与屏障区域相对应的电位时。在第二实施例中，第二导电类型的漏极区域基本上延伸到衬底的前侧的至少一部分中; 所述第一导电类型的阻挡区基本上位于所述漏极区周围; 以及第二导电类型的通道区域，其基本上位于和围绕阻挡区域的下方。通过离子注入形成沟道区域，势垒区域和漏极区域。

6. 发明申请

US20100032783A1 METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS 有权
标题翻译：制造后照明成像传感器的方法
公开(公告)号：US20100032783A1
公开(公告)日：2010-02-11
申请号：US12579623
申请日：2009-10-15
申请人： Pradyumna Kumar Swain , Mahalingam Bhaskaran , Peter Alan Pal Levine
发明人： Pradyumna Kumar Swain , Mahalingam Bhaskaran , Peter Alan Pal Levine
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/1214 , H01L27/1266 , H01L27/14645 , H01L27/14683 , H01L2224/48463
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; forming at least one bond pad region extending into the epitaxial layer to a surface of the insulator layer; fabricating at least one bond pad at least partially overlying the at least one bond pad region; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer, fabricating a passivation layer substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component; bonding a handle wafer to the passivation layer; and etching through at least a portion of the insulator layer and at least a portion of the bond pad region to expose at least a portion of the at least one bond pad.
摘要翻译：公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。用于制造成像装置的方法包括以下步骤：提供包括绝缘体层的基板和基本上覆盖绝缘体层的外延层; 形成延伸到所述外延层中的至少一个焊盘区域到所述绝缘体层的表面; 制造至少部分地覆盖所述至少一个接合焊盘区域的至少一个接合焊盘; 制造至少部分地覆盖并延伸到所述外延层中的至少一个成像部件，制造基本上覆盖所述外延层的钝化层，所述至少一个接合焊盘和所述至少一个成像部件; 将处理晶片接合到钝化层; 以及蚀刻穿过所述绝缘体层的至少一部分和所述接合焊盘区域的至少一部分以暴露所述至少一个接合焊盘的至少一部分。

7. 发明申请

US20090256227A1 METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS USING A BUMP BONDING TECHNIQUE 有权
标题翻译：使用BUMP BONDING技术制造背照式成像传感器的方法
公开(公告)号：US20090256227A1
公开(公告)日：2009-10-15
申请号：US12431150
申请日：2009-04-28
申请人： Mahalingam Bhaskaran , Pradyumna Kumar Swain , Peter Levine , Norman Goldsmith
发明人： Mahalingam Bhaskaran , Pradyumna Kumar Swain , Peter Levine , Norman Goldsmith
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2224/0401 , H01L2224/0557 , H01L2224/13023 , H01L2224/13109 , H01L2924/0002 , H01L2924/1305 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.
摘要翻译：公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。用于制造成像装置的方法包括以下步骤：提供包括绝缘体层的基板和基本上覆盖绝缘体层的外延层; 制造至少部分地覆盖并延伸到所述外延层中的至少一个成像部件; 形成基本上覆盖所述外延层的多个接合焊盘; 制造基本上覆盖所述外延层和所述至少一个成像部件的电介质层; 提供处理晶片; 在所述手柄晶片中形成多个导电沟槽; 在所述处理晶片的位于所述导电沟槽下面的第一表面上形成多个导电凸块; 以及将所述多个导电凸块接合到所述多个接合焊盘。

8. 发明申请

US20080237668A1 METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS 有权
标题翻译：制造后照明成像传感器的方法
公开(公告)号：US20080237668A1
公开(公告)日：2008-10-02
申请号：US12020640
申请日：2008-01-28
申请人： Pradyumna Kumar Swain , Mahalingam Bhaskaran , Peter Alan Pal Levine
发明人： Pradyumna Kumar Swain , Mahalingam Bhaskaran , Peter Alan Pal Levine
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1464 , H01L27/1214 , H01L27/1266 , H01L27/14645 , H01L27/14683 , H01L2224/48463
摘要： A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; forming at least one bond pad region extending into the epitaxial layer to a surface of the insulator layer; fabricating at least one bond pad at least partially overlying the at least one bond pad region; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; fabricating a passivation layer substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component; bonding a handle wafer to the passivation layer; and etching through at least a portion of the insulator layer and at least a portion of the bond pad region to expose at least a portion of the at least one bond pad.
摘要翻译：公开了一种用于在绝缘体上半导体衬底上制造背照式半导体成像器件的方法，以及所得成像器件。用于制造成像装置的方法包括以下步骤：提供包括绝缘体层的基板和基本上覆盖绝缘体层的外延层; 形成延伸到所述外延层中的至少一个焊盘区域到所述绝缘体层的表面; 制造至少部分地覆盖所述至少一个接合焊盘区域的至少一个接合焊盘; 制造至少部分地覆盖并延伸到所述外延层中的至少一个成像部件; 制造基本上覆盖所述外延层的钝化层，所述至少一个接合焊盘和所述至少一个成像部件; 将处理晶片接合到钝化层; 以及蚀刻穿过所述绝缘体层的至少一部分和所述接合焊盘区域的至少一部分以暴露所述至少一个接合焊盘的至少一部分。

9. 发明申请

US20090206377A1 METHOD AND DEVICE FOR REDUCING CROSSTALK IN BACK ILLUMINATED IMAGERS 有权
标题翻译：用于减少后照射图像中的晶体的方法和装置
公开(公告)号：US20090206377A1
公开(公告)日：2009-08-20
申请号：US12132721
申请日：2008-06-04
申请人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer.
摘要翻译：公开了一种用于减少背照式成像器中的串扰的方法和产生的装置，包括提供包括绝缘体层和基本上覆盖绝缘体层的晶种层的衬底，形成接合层的界面，其中晶种层与绝缘体层接触 ; 形成基本覆盖种子层的外延层，所述外延层限定多个像素区域，每个像素区域概述收集阱以收集电荷载流子; 并且围绕延伸到外延层中的轮廓收集阱形成围绕种子层和绝缘体层之间的界面的电，光和电和光屏障中的一个。晶种层和器件的外延层具有净掺杂剂浓度分布，其在种子层和绝缘体层的界面处具有初始最大值，并且随着距离半导体的初始部分内的界面的距离的增加而单调减小衬底和外延层。

10. 发明授权

US07985612B2 Method and device for reducing crosstalk in back illuminated imagers 有权
标题翻译：用于减少背照射成像仪中串扰的方法和装置
公开(公告)号：US07985612B2
公开(公告)日：2011-07-26
申请号：US12132721
申请日：2008-06-04
申请人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , Mahalingam Bhaskaran
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer.
摘要翻译：公开了一种用于减少背照式成像器中的串扰的方法和产生的装置，包括提供包括绝缘体层和基本上覆盖绝缘体层的晶种层的衬底，形成接合层的界面，其中晶种层与绝缘体层接触 ; 形成基本覆盖种子层的外延层，所述外延层限定多个像素区域，每个像素区域概述收集阱以收集电荷载流子; 并且围绕延伸到外延层中的轮廓收集阱形成围绕种子层和绝缘体层之间的界面的电，光和电和光屏障中的一个。晶种层和器件的外延层具有净掺杂剂浓度分布，其在种子层和绝缘体层的界面处具有初始最大值，并且随着距离半导体的初始部分内的界面的距离的增加而单调减小衬底和外延层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式