专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090294883A1 METHOD FOR ELECTRONICALLY PINNING A BACK SURFACE OF A BACK-ILLUMINATED IMAGER FABRICATED ON A UTSOI WAFER 有权
标题翻译：在UTSOI WAFER上制造背面照明图像的背面电子密封方法
公开(公告)号：US20090294883A1
公开(公告)日：2009-12-03
申请号：US12466795
申请日：2009-05-15
申请人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
IPC分类号： H01L31/101 , H01L31/18 , H01L21/30
CPC分类号： H01L27/14687 , H01L21/84 , H01L27/1464
摘要： A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.
摘要翻译：公开了一种制造具有固定后表面的背照式成像器的方法。第一绝缘体层形成在机械衬底上。沉积覆盖在第一绝缘体层上的导电层。形成第二绝缘体层，覆盖在导电层上以形成第一结构，在导电层和第二绝缘体层之间形成界面，导电层使接近端面的带弯曲使得电接头被固定。将氢气注入单独的器件晶片中以形成气泡层。形成覆盖在器件晶片上的最终绝缘体层以形成第二结构。第一结构和第二结构被结合以形成组合晶片。组合的晶片的一部分被移除到气泡层下方，以暴露包含半导体材料的晶种层，其基本上覆盖在第二绝缘体层上。

2. 发明授权

US09520441B2 Method for electronically pinning a back surface of a back-illuminated imager fabricated on a UTSOI wafer 有权
标题翻译：用于电子固定在UTSOI晶片上制造的背照式成像器的背面的方法
公开(公告)号：US09520441B2
公开(公告)日：2016-12-13
申请号：US12466795
申请日：2009-05-15
申请人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
发明人： Pradyumna Kumar Swain , David Jay Cheskis , Mahalingam Bhaskaran
IPC分类号： H01L27/14 , H01L27/146 , H01L21/84
CPC分类号： H01L27/14687 , H01L21/84 , H01L27/1464
摘要： A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.
摘要翻译：公开了一种制造具有固定后表面的背照式成像器的方法。第一绝缘体层形成在机械衬底上。沉积覆盖在第一绝缘体层上的导电层。形成第二绝缘体层，覆盖在导电层上以形成第一结构，在导电层和第二绝缘体层之间形成界面，导电层使接近端面的带弯曲使得电接头被固定。将氢气注入单独的器件晶片中以形成气泡层。形成覆盖在器件晶片上的最终绝缘体层以形成第二结构。第一结构和第二结构被结合以形成组合晶片。组合的晶片的一部分被移除到气泡层下方，以暴露包含半导体材料的晶种层，其基本上覆盖在第二绝缘体层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式