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1. 发明授权

US07504006B2 Self-ionized and capacitively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电容耦合等离子体
公开(公告)号：US07504006B2
公开(公告)日：2009-03-17
申请号：US10632882
申请日：2003-07-31
申请人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
发明人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
IPC分类号： C23C14/35
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32706 , H01J37/3408 , H01J37/3455
摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.
摘要翻译：例如，用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体（SIP）溅射和电容耦合等离子体（CCP）溅射的方法，其一起或交替地被促进，在同一个房间。此外，可以通过电感耦合等离子体（ICP）再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强，其作用是限制CCP等离子体并增加其密度。

2. 发明授权

US09062372B2 Self-ionized and capacitively-coupled plasma for sputtering and resputtering 有权
公开(公告)号：US09062372B2
公开(公告)日：2015-06-23
申请号：US11933086
申请日：2007-10-31
申请人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
发明人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
IPC分类号： C23C14/35 , C23C14/34 , H01J37/32 , H01J37/34
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32706 , H01J37/3408 , H01J37/3455
摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

3. 发明授权

US06406599B1 Magnetron with a rotating center magnet for a vault shaped sputtering target 有权
标题翻译：磁控管具有用于拱形溅射靶的旋转中心磁体
公开(公告)号：US06406599B1
公开(公告)日：2002-06-18
申请号：US09703738
申请日：2000-11-01
申请人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
发明人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/3455
摘要： A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exits from the top frame.
摘要翻译：一种等离子体溅射反应器，包括具有环形拱顶的靶，该环形拱顶形成在面向待溅射涂层的晶片的表面上，并且具有内侧壁和外侧壁以及其上方的屋顶。在管状内侧壁之间的靶的后部形成有孔。与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管关于目标的中心轴。下框架支撑目标，而上框架支撑磁控管，包括与下框架相邻的磁体。内部磁体组件具有通过内部磁体底部的冷却水通道，以将冷却水注入到井的底部。冷却水由旋转屋顶磁控管搅拌，并通过形成在底架中的入口离开水浴，但是从顶架离开。

4. 发明授权

US06790326B2 Magnetron for a vault shaped sputtering target having two opposed sidewall magnets 有权
标题翻译：用于具有两个相对的侧壁磁体的拱形溅射靶的磁控管
公开(公告)号：US06790326B2
公开(公告)日：2004-09-14
申请号：US10171318
申请日：2002-06-13
申请人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
发明人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/3455
摘要： A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.
摘要翻译：一种等离子体溅射反应器，其包括具有环形拱顶的靶，其表面面向待溅射涂覆的晶片，并且具有内侧壁和外侧壁以及顶部。在管状内侧壁之间的靶的后部形成有孔。与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管关于目标的中心轴。

5. 发明申请

US20070170052A1 TARGET FOR SPUTTERING CHAMBER 有权
标题翻译：喷射室目标
公开(公告)号：US20070170052A1
公开(公告)日：2007-07-26
申请号：US11558929
申请日：2006-11-12
申请人： Alan Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen Scheible , Umesh Kelkar
发明人： Alan Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen Scheible , Umesh Kelkar
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.
摘要翻译：溅射室具有包括背板和溅射板的溅射靶。背板具有凹槽。溅射板包括具有平面的圆柱形台面和围绕圆柱形台面的环形倾斜边缘。在一个版本中，背板包括具有高导热性和低电阻率的材料。在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。

6. 发明授权

US06190037B1 Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system 有权
标题翻译：非侵入式（OTF）温度测量和监测系统
公开(公告)号：US06190037B1
公开(公告)日：2001-02-20
申请号：US09253220
申请日：1999-02-19
申请人： Ashok Das , Nety Krishna , Marc Schweitzer , Nalin Patadia , Wei Yang , Umesh Kelkar , Vijay Parkhe , Scot Petitt , Nitin Khurana
发明人： Ashok Das , Nety Krishna , Marc Schweitzer , Nalin Patadia , Wei Yang , Umesh Kelkar , Vijay Parkhe , Scot Petitt , Nitin Khurana
IPC分类号： G01J500
CPC分类号： G01J5/041 , G01J5/0022
摘要： The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.
摘要翻译：本发明提供了一种用于测量运动辐射物体的温度的装置和方法。诸如高温计的探针设置在与辐射透明窗相邻的真空室的开口中。探针限定了拦截进入或离开处理室的辐射物体的光路。辐射物体通过光路移动并发射电磁波。电磁波由探头收集并传输到信号处理单元，在该信号处理单元检测波并将其转换为温度读数。如果需要，则可以使用累积的数据来产生表示辐射物体经历的热效应的冷却曲线。可以使用外推法或相关方法将冷却曲线延伸到由探针收集的数据之前或之后的时间点。

7. 发明授权

US08647484B2 Target for sputtering chamber 有权
标题翻译：溅射室靶
公开(公告)号：US08647484B2
公开(公告)日：2014-02-11
申请号：US11558929
申请日：2006-11-12
申请人： Alan Alexander Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen A. Scheible , Umesh Kelkar
发明人： Alan Alexander Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen A. Scheible , Umesh Kelkar
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.
摘要翻译：溅射室具有包括背板和溅射板的溅射靶。背板具有凹槽。溅射板包括具有平面的圆柱形台面和围绕圆柱形台面的环形倾斜边缘。在一个版本中，背板包括具有高导热性和低电阻率的材料。在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。

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