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1. 发明授权

US06521173B2 Low oxygen refractory metal powder for powder metallurgy 有权
$Low oxygen refractory metal powder for powder metallurgy$
公开(公告)号：US06521173B2
公开(公告)日：2003-02-18
申请号：US09906208
申请日：2001-07-16
申请人： Prabhat Kumar , Paul Aimone , Robert W. Balliett , Anthony V. Parise , Thomas M. Ramlow , Henning Uhlenhut
发明人： Prabhat Kumar , Paul Aimone , Robert W. Balliett , Anthony V. Parise , Thomas M. Ramlow , Henning Uhlenhut
IPC分类号： B22F310
CPC分类号： H01G9/042 , B22F1/0088 , B22F3/162 , B22F9/023 , B22F2003/208 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C22B9/14 , C22B34/24 , C22C1/045 , C22C32/0031 , H01G9/0525 , B22F3/04 , B22F3/1208 , B22F3/20 , B22F3/10 , B22F3/15 , B22F3/16 , B22F3/1007 , B22F2201/20
摘要： A method of making sheet bar and other precursors of formed products to be made by extensive working. The method includes providing a powder metal, preferably under 100 PPM oxygen content of non-spherical particles, compacting the powder into a coherent precursor form of at least 100 pounds, whereby a precursor is provided enabling extended fabrication to a finished product form. The finished product is resistant to breakup in fabrication due to oxide inclusion effect and produces a low oxygen end product. The method can process multiple species of metals that include at least one higher melting metal and one lower melting metal to produce an alloy or micro-composite of the metals as worked, where one metal is preferably a refractory metal (Ta, Nb, W, Wo, Zr, Hf, V and Re). The process is controlled to cause powder of the higher melting metal to be extended into a fibrous form.

2. 发明申请

US20050118052A1 Stabilized grain size refractory metal powder metallurgy mill products 审中-公开
$Stabilized grain size refractory metal powder metallurgy mill products$
标题翻译：稳定粒度难熔金属粉末冶金磨产品
公开(公告)号：US20050118052A1
公开(公告)日：2005-06-02
申请号：US10502281
申请日：2003-01-21
申请人： Paul Aimone , Howard Goldberg , Richard Malen , Thomas Morse , Prabhat Kumar , Henning Uhlenhut
发明人： Paul Aimone , Howard Goldberg , Richard Malen , Thomas Morse , Prabhat Kumar , Henning Uhlenhut
IPC分类号： B22F3/10 , B22F1/00 , B22F3/20 , B22F3/24 , C22C32/00 , B22F1/02
CPC分类号： B22F3/1003 , B22F1/0088 , B22F2003/1032 , B22F2005/002 , B22F2998/00 , B22F2998/10 , C22C32/0031 , B22F5/007 , B22F1/0003 , B22F3/15 , B22F3/16 , B22F3/20
摘要： A powder metal (P/M) mill product and the method of fabrication such product made out of low oxygen (
摘要翻译：粉末金属（P / M）研磨产品和使用氧化物添加剂（例如MgO，SiO 2）的低氧（<400ppm）难熔金属或其合金制成的产品的方法 >和Y 2 O 3 3），用于共同制造以实现在高温应用中所需的难熔金属晶粒尺寸稳定性。一种这样的产品是具有小颗粒尺寸的片状物，其含有氧化物颗粒作为晶粒尺寸稳定剂。该产品具有良好的机械性能，在磨机产品中的粉末的难熔金属纤维衍生物中的低氧含量，如果可用作大片（侧向尺寸）。金属粉末通过不同的方法固结到片材棒，其可以重50磅或更多。

3. 发明申请

US20060032735A1 Rejuvenation of refractory metal products 有权
$Rejuvenation of refractory metal products$
标题翻译：耐火金属制品的复兴
公开(公告)号：US20060032735A1
公开(公告)日：2006-02-16
申请号：US11038890
申请日：2005-01-19
申请人： Paul Aimone , Prabhat Kumar , Peter Jepson , Henning Uhlenhut , Howard Goldberg , Steven Miller
发明人： Paul Aimone , Prabhat Kumar , Peter Jepson , Henning Uhlenhut , Howard Goldberg , Steven Miller
IPC分类号： C23C14/32
CPC分类号： H01J37/3491 , B22F7/062 , B22F2007/068 , B22F2999/00 , C23C14/3414 , Y02P10/295 , B22F3/1055
摘要： Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要翻译：耐火金属制品，如钽，可以在选定区域的金属消耗后通过用粉末填充区域并同时向粉末施加聚焦的辐射能来恢复活力。

4. 发明授权

US07794554B2 Rejuvenation of refractory metal products 有权
$Rejuvenation of refractory metal products$
标题翻译：耐火金属制品的复兴
公开(公告)号：US07794554B2
公开(公告)日：2010-09-14
申请号：US11038890
申请日：2005-01-19
申请人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson , Henning Uhlenhut , Howard V. Goldberg , Steven A. Miller
发明人： Paul R. Aimone , Prabhat Kumar , Peter R. Jepson , Henning Uhlenhut , Howard V. Goldberg , Steven A. Miller
IPC分类号： C21D5/00
CPC分类号： H01J37/3491 , B22F7/062 , B22F2007/068 , B22F2999/00 , C23C14/3414 , Y02P10/295 , B22F3/1055
摘要： Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要翻译：耐火金属制品，如钽，可以在选定区域的金属消耗后通过用粉末填充区域并同时向粉末施加聚焦的辐射能来恢复活力。

5. 发明授权

US06731495B2 Thin film capacitor using conductive polymers 失效
标题翻译：使用导电聚合物的薄膜电容器
公开(公告)号：US06731495B2
公开(公告)日：2004-05-04
申请号：US10285748
申请日：2002-11-01
申请人： Prabhat Kumar , Henning Uhlenhut
发明人： Prabhat Kumar , Henning Uhlenhut
IPC分类号： H01G420
CPC分类号： H01G9/15 , H01G4/10 , H01G11/48 , H05K1/162 , H05K2201/0179 , H05K2201/0329 , H05K2201/09763 , Y02E60/13
摘要： The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film containing an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film containing an electrically conductive polymer located on the pentoxide layer.
摘要翻译：本发明涉及一种薄膜电容器，其包含（a）基底，（b）含有位于基底上的导电聚合物的第一聚合物膜，（c）选自五氧化二钽或五氧化二铌的五氧化物层，及其混合物，（d）含有位于五氧化物层上的导电聚合物的第二聚合物膜。

6. 发明申请

US20060115372A1 Refractory metal annealing bands 审中-公开
$Refractory metal annealing bands$
标题翻译：耐火金属退火带
公开(公告)号：US20060115372A1
公开(公告)日：2006-06-01
申请号：US10543579
申请日：2004-01-30
申请人： Prabhat Kumar , John Durham , Richard Malen , Howard Goldberg , Henning Uhlenhut
发明人： Prabhat Kumar , John Durham , Richard Malen , Howard Goldberg , Henning Uhlenhut
IPC分类号： C21D9/52
CPC分类号： B22F5/003 , B22F3/16 , B22F5/006 , B22F2005/002 , B22F2998/00 , B22F2998/10 , C21D9/52 , C21D9/62 , C22C1/045 , C22C9/00 , C22C32/0031 , B22F3/105 , B22F3/17 , B22F3/18 , B22F3/12 , B22F3/15 , B22F3/20 , B22F2003/248 , B22F2202/06 , B22F3/02 , B22F3/10 , B22F3/04 , B22F3/14 , B22F3/24 , B22F1/0003
摘要： The invention relates to a process for making an annealing band, the process comprising (a) producing a refractory metal powder; or refractory metal alloy powder; (b) optionally blending the powder with an oxide component or a carbide component; (c) consolidating the powder or powder blend and forming a consolidated powder component; (d) subjecting the consolidated powder component to thermo-mechanical treatment and forming a sheet, or tube; (e) cutting the sheet into a strip; and (f) forming an annealing band from the strip. Then invention also relates to annealing bands and processes for using annealing bands.
摘要翻译：本发明涉及一种制备退火带的方法，该方法包括（a）制备难熔金属粉末; 或难熔金属合金粉末; （b）任选地将粉末与氧化物组分或碳化物组分共混; （c）固结粉末或粉末混合物并形成固化粉末组分; （d）对固化的粉末组分进行热机械处理并形成片材或管子; （e）将片材切割成条带; 和（f）从带形成退火带。本发明还涉及退火带和使用退火带的方法。

7. 发明授权

US06912113B2 Thin film capacitor using conductive polymers 失效
标题翻译：使用导电聚合物的薄膜电容器
公开(公告)号：US06912113B2
公开(公告)日：2005-06-28
申请号：US10801324
申请日：2004-03-16
申请人： Prabhat Kumar , Henning Uhlenhut
发明人： Prabhat Kumar , Henning Uhlenhut
IPC分类号： H01G4/33 , H01G4/10 , H01G4/38 , H01G9/00 , H01G9/15 , H05K1/16 , H01G4/30
CPC分类号： H01G9/15 , H01G4/10 , H01G11/48 , H05K1/162 , H05K2201/0179 , H05K2201/0329 , H05K2201/09763 , Y02E60/13
摘要： The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.
摘要翻译：本发明涉及一种薄膜电容器，其包含（a）基底，（b）第一聚合物膜，其包含位于基底上的导电聚合物，（c）五氧化物层，其选自五氧化二钽或五氧化二铌，及其混合物，（d）包含位于五氧化物层上的导电聚合物的第二聚合物膜。

8. 发明申请

US20050142021A1 Refractory metal and alloy refining by laser forming and melting 有权
$Refractory metal and alloy refining by laser forming and melting$
标题翻译：耐火金属和合金精炼通过激光成形和熔化
公开(公告)号：US20050142021A1
公开(公告)日：2005-06-30
申请号：US10501837
申请日：2003-01-22
申请人： Paul Aimone , Prabhat Kumar , Peter Jepson
发明人： Paul Aimone , Prabhat Kumar , Peter Jepson
IPC分类号： B22F3/105 , B22F3/15 , C23C14/34 , C23C24/10 , C23C26/00 , B22F7/06
CPC分类号： B22F5/00 , C23C14/3414 , C23C24/10
摘要： A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.
摘要翻译：与现有技术路线相比，将钽，铌及其合金化学改善和固结成网状或近净形状的制造产品，具有更高的生产能力，更高的一致性和更低的制造成本，或者使受损和劣化的难熔金属部件恢复活力。将粉末金属装入料斗中以供入激光成形/熔化设备。合适的基底被加载到激光成形/熔化室中，粉末将在其中沉积并在点扫描过程中固结到其上。当粉末以线性迹线供给到基底表面的连续点时，激光用于加热和部分熔化基底并完全熔化粉末。组合的沉积和熔体束在选择的区域上重复地跟踪衬底表面，以在多层中建立受控微结构的致密涂层。建立了一个完全致密的沉积物，成为所需的形状。

9. 发明授权

US09926623B2 Methods of forming molybdenum sputtering targets 有权
公开(公告)号：US09926623B2
公开(公告)日：2018-03-27
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F3/16 , C22C1/04 , C22C27/04 , C23C14/35 , C23C14/46 , B22F1/00 , B22F5/00 , C21D8/02 , C22F1/18 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.

10. 发明申请

US20160315009A1 UV-CURE PRE-TREATMENT OF CARRIER FILM FOR WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH 有权
标题翻译：使用混合激光扫描和等离子体蚀刻方法进行波长涂覆的载体膜的UV固化预处理
公开(公告)号：US20160315009A1
公开(公告)日：2016-10-27
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，在半导体晶片的正面上切割具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附在基板载体的切割带上。在将半导体晶片粘附在切割带上之后，用UV固化工艺处理切割带。在通过UV固化处理处理切割带之后，在半导体晶片的前侧形成切割掩模，该切割掩模覆盖并保护集成电路。用激光刻划工艺对切割掩模进行图案化，以在切割掩模之间提供间隙，在半导体晶片的间隙暴露在集成电路之间。通过切割掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

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