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    • 1. 发明申请
    • VOLTAGE DETECTING CIRCUIT
    • 电压检测电路
    • US20120212212A1
    • 2012-08-23
    • US13396235
    • 2012-02-14
    • Po-Hung CHENMakoto TAKAMIYATakayasu SAKURAI
    • Po-Hung CHENMakoto TAKAMIYATakayasu SAKURAI
    • G01R19/155
    • G01R19/16519G01F3/20
    • In a voltage detecting circuit, a transistor is configured as a P-type MOSFET, and includes a source connected with an input terminal, a gate connected with a ground voltage terminal and a drain connected with an output terminal. A transistor is configured as a P-type MOSFET, and includes a gate and a source connected with the output terminal and a drain connected with the ground terminal. Gate width and gate length of the transistor and gate width and gate length of the transistor are adjusted so that source-drain current flowing between the source and the drain of the transistor becomes equal to source-drain current flowing between the source and the drain of the transistor when the voltage applied to the input terminal is set to be preset trigger voltage. This configuration accomplishes detecting that the input voltage exceeds the trigger voltage with simple configuration.
    • 在电压检测电路中,晶体管被配置为P型MOSFET,并且包括与输入端连接的源极,与接地电压端子连接的栅极和与输出端子连接的漏极。 晶体管被配置为P型MOSFET,并且包括与输出端连接的栅极和源极以及与接地端子连接的漏极。 调节晶体管的栅极宽度和栅极长度,并调整晶体管的栅极宽度和栅极长度,使得在晶体管的源极和漏极之间流动的源极 - 漏极电流变得等于在源极和漏极之间流动的源极 - 漏极电流 当施加到输入端子的电压被设置为预置触发电压时,晶体管。 该配置通过简单的配置实现了输入电压超过触发电压的检测。