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1. 发明授权

US07772564B2 Particle-optical apparatus equipped with a gas ion source 有权
标题翻译：配备气体离子源的粒子光学仪器
公开(公告)号：US07772564B2
公开(公告)日：2010-08-10
申请号：US11709303
申请日：2007-02-21
申请人： Pieter Kruit , Vipin Nagnath Tondare
发明人： Pieter Kruit , Vipin Nagnath Tondare
IPC分类号： H01J27/02
CPC分类号： H01J27/205 , H01J37/08 , H01J2237/0807 , H01J2237/082
摘要： The invention relates to an electron impact gas ion with high brightness and low energy spread. This high brightness is achieved by injecting electrons in a small ionization volume (from less than 1 μm to several tens of micrometers in size) from one side and extracting ions from the other. The electrons injected are produced by a high brightness electron source, such as a field emitter or a Schottky emitter.In one embodiment of the invention the required high electron density in the ionization volume is realized by placing a field emitter close to the ionization volume (e.g. 30 μm), without optics between source and ionization volume.In another embodiment of the invention the source is imaged onto a MEMS structure. Two small diaphragms of e.g. 50 nm are spaced e.g. 1 μm apart. The electrons enter through one of these diaphragms, while the ions leave the ionization volume through the other one. The two diaphragms are manufactured by e.g. drilling with an ion beam, resulting in two small and well aligned diaphragms.
摘要翻译：本发明涉及具有高亮度和低能量扩散的电子冲击气体离子。通过从一侧注入小电离体积（小于1μm至数十微米）的电子并从另一侧提取离子来实现该高亮度。注入的电子通过高亮度电子源产生，例如场发射体或肖特基发射极。在本发明的一个实施方案中，电离体积中所需的高电子密度通过将场致发射体靠近离子化体积（例如30μm）放置，而不需要源和电离体积之间的光学元件。在本发明的另一个实施例中，源被成像到MEMS结构上。两个小的隔膜。 50nm间隔开。相距1μm。电子通过这些隔膜中的一个进入，而离子离开离子化体积通过另一个。两个隔膜由例如，用离子束进行钻孔，产生两个小且良好对准的膜片。

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