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    • 9. 发明授权
    • Strong distributed feedback semiconductor laser
    • 强分布反馈半导体激光器
    • US07567606B2
    • 2009-07-28
    • US12117780
    • 2008-05-09
    • Mathieu CarrasAlfredo De Rossi
    • Mathieu CarrasAlfredo De Rossi
    • H01S5/00
    • H01S5/1228
    • The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [ λ 4 × neff ] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.
    • 本发明涉及强分布反馈半导体激光器。 更具体地,本发明实现了具有表面金属光栅(5)的半导体激光器的顶部光波导(2),使得可以使用简单且鲁棒的技术获得稳定和受控的分布式反馈。 在本发明的激光器中,其中包括有效折射率(neff)的有效区域(1),其中以波长(λ)传播光波,顶部波导管(2)由弱掺杂材料制成, 周期性光栅(5)深度(p)为 [ > > > > 加或减50%,所需的低精度是本发明激光器的优点之一。