专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110136346A1 Substantially Non-Oxidizing Plasma Treatment Devices and Processes 审中-公开
标题翻译：基本无氧化等离子体处理装置及工艺
公开(公告)号：US20110136346A1
公开(公告)日：2011-06-09
申请号：US12631117
申请日：2009-12-04
申请人： Phillip Geissbühler , Ivan Berry , Armin Huseinovic , Shijian Luo , Aseem Kumar Srivastava , Carlo Waldfried
发明人： Phillip Geissbühler , Ivan Berry , Armin Huseinovic , Shijian Luo , Aseem Kumar Srivastava , Carlo Waldfried
IPC分类号： H01L21/3065 , G03F7/42 , B08B7/00
CPC分类号： H01L21/67069 , H01J37/32357 , H01J37/32477 , H01J37/32504 , H01J37/32844 , H01J37/32935 , H01L21/31138 , Y02C20/30 , Y02P70/605
摘要： Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.
摘要翻译：用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。在其它实施例中，处理室壁构造成在等离子体处理期间被加热。还公开了非氧化等离子体工艺。

2. 发明授权

US08580076B2 Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith 有权
标题翻译：等离子体装置，用于等离子体装置的气体分配组件及其处理
公开(公告)号：US08580076B2
公开(公告)日：2013-11-12
申请号：US10249962
申请日：2003-05-22
申请人： Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
发明人： Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/4412 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/46 , C23C16/505 , C23C16/511
CPC分类号： H01J37/32357 , H01J37/3244 , H01J37/32844 , Y02C20/30
摘要： A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).
摘要翻译：等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

3. 发明授权

US06796711B2 Contact temperature probe and process 失效
标题翻译：接触式温度探头和过程
公开(公告)号：US06796711B2
公开(公告)日：2004-09-28
申请号：US10113554
申请日：2002-03-29
申请人： Michael Bruce Colson , Aseem Kumar Srivastava
发明人： Michael Bruce Colson , Aseem Kumar Srivastava
IPC分类号： G01K706
CPC分类号： G01K1/143
摘要： A contact measurement probe for measuring a temperature of a substrate in a process environment includes a probe head having a contact surface made of a ceramic material or a polymeric material for contacting the substrate. The contact measurement probe eliminates electrical biasing effects in process environments that include an ion source, thereby providing greater accuracy and reproducibility in temperature measurement.
摘要翻译：用于在工艺环境中测量衬底的温度的接触式测量探头包括具有由陶瓷材料制成的接触表面的探头或用于接触衬底的聚合材料。接触式测量探头消除了包括离子源在内的工艺环境中的电气偏置效应，从而在温度测量中提供更高的精度和重复性。

4. 发明申请

US20100055807A1 PLASMA ASHING APPARATUS AND ENDPOINT DETECTION PROCESS 有权
标题翻译：等离子体吸附装置和端点检测过程
公开(公告)号：US20100055807A1
公开(公告)日：2010-03-04
申请号：US12552316
申请日：2009-09-02
申请人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
发明人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , G03F7/427 , H01J37/32357 , H01J37/32834 , H01J37/32935 , H01J2237/3342 , H01L21/67069
摘要： A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.
摘要翻译：一种用于从包括第一气体源的低k电介质的衬底去除有机物质的等离子体灰化装置; 与所述第一气体源流体连通的等离子体产生部件; 与所述等离子体产生部件流体连通的处理室; 与处理室流体连通的排气管道; 其中所述排气管道包括用于第二气体源的入口和耦合到所述排气管道的后燃烧器组件，其中所述入口设置在所述处理室和加力燃烧器组件的中间，并且其中所述后燃烧器组件包括用于在所述排气管内产生等离子体的装置具有或不从第二气体源引入气体的排气导管; 以及耦合到所述排气导管的光发射光谱装置，包括聚焦在所述后燃器组件的等离子体放电区域内的收集光学器件。用于无氧和无氮等离子体工艺的端点检测方法包括监测等离子体灰化装置的排气管道中的后燃器激发物质的光发射信号。该方法和装置可以与含有低k电介质材料的碳和/或氢一起使用。

5. 发明授权

US07037846B2 Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing 有权
标题翻译：用于微喷射的方法和装置，等离子体处理中的低能离子产生和输送
公开(公告)号：US07037846B2
公开(公告)日：2006-05-02
申请号：US10752906
申请日：2004-01-06
申请人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
发明人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/32192 , H01J37/321
摘要： A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
摘要翻译：公开了一种用于产生和传送用于半导体晶片的等离子体处理的低能离子的方法。在本发明的示例性实施例中，该方法包括从气体种类产生等离子体以产生等离子体排气。然后将等离子体废气引入到包含晶片的处理室中。当等离子体被引入处理室中时，通过激活补充离子源来提高等离子体排气的离子含量，由此在其中产生初级等离子体放电。然后，将初级等离子体放电引导到挡板组件中，从而产生离开挡板组件的次级等离子体放电。施加在次级等离子体放电中包含的离子上的电场的强度降低。这样做时，电场强度的降低会使离子以不足以对晶片上形成的半导体器件造成损害的能量轰击晶片。

6. 发明授权

US06031320A Device for cooling electrodeless lamp with supersonic outlet jets and a staggered manifold 失效
标题翻译：具有超音速出口喷嘴和交错歧管的无极灯冷却装置
公开(公告)号：US06031320A
公开(公告)日：2000-02-29
申请号：US14289
申请日：1998-01-27
申请人： Mohammad Kamarehi , Aseem Kumar Srivastava , Robert D. Wooten
发明人： Mohammad Kamarehi , Aseem Kumar Srivastava , Robert D. Wooten
IPC分类号： H01J7/24 , H01J61/52 , H01J65/04 , H01J61/20 , H01J61/12
CPC分类号： H01J65/044 , H01J61/52
摘要： An apparatus for cooling an electrodeless lamp including a supersonic outlet jet for providing a stream of cooling gas. A common manifold including mounting elements for a plurality of conduits of equal length for transporting cooling gas, wherein the mounting elements are at staggered elevational positions so that the conduits provide cooling gas in the vicinity of lamp envelope at different elevational positions.
摘要翻译：一种用于冷却包括用于提供冷却气体流的超音速出口射流的无电极灯的装置。一种常见的歧管，包括用于传输冷却气体的相同长度的多个导管的安装元件，其中安装元件处于交错的高度位置，使得导管在不同高度位置处的灯壳附近提供冷却气体。

7. 发明授权

US08268181B2 Plasma ashing apparatus and endpoint detection process 有权
标题翻译：等离子灰化装置和端点检测过程
公开(公告)号：US08268181B2
公开(公告)日：2012-09-18
申请号：US12552316
申请日：2009-09-02
申请人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
发明人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01L21/67253 , G03F7/427 , H01J37/32357 , H01J37/32834 , H01J37/32935 , H01J2237/3342 , H01L21/67069
摘要： A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.
摘要翻译：一种用于从包括第一气体源的低k电介质的衬底去除有机物质的等离子体灰化装置; 与所述第一气体源流体连通的等离子体产生部件; 与所述等离子体产生部件流体连通的处理室; 与处理室流体连通的排气管道; 其中所述排气管道包括用于第二气体源的入口和耦合到所述排气管道的后燃烧器组件，其中所述入口设置在所述处理室和加力燃烧器组件的中间，并且其中所述后燃烧器组件包括用于在所述排气管内产生等离子体的装置具有或不从第二气体源引入气体的排气导管; 以及耦合到所述排气导管的光发射光谱装置，包括聚焦在所述后燃器组件的等离子体放电区域内的收集光学器件。用于无氧和无氮等离子体工艺的端点检测方法包括监测等离子体灰化装置的排气管道中的后燃器激发物质的光发射信号。该方法和装置可以与含有低k电介质材料的碳和/或氢一起使用。

8. 发明授权

US06761796B2 Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing 有权
标题翻译：用于等离子体处理中的微喷射低能量离子生成传输的方法和装置
公开(公告)号：US06761796B2
公开(公告)日：2004-07-13
申请号：US09905043
申请日：2001-07-13
申请人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
发明人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/321
摘要： A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
摘要翻译：公开了一种用于产生和传送用于半导体晶片的等离子体处理的低能离子的方法。在本发明的示例性实施例中，该方法包括从气体种类产生等离子体以产生等离子体排气。然后将等离子体废气引入到包含晶片的处理室中。当等离子体被引入处理室中时，通过激活补充离子源来提高等离子体排气的离子含量，由此在其中产生初级等离子体放电。然后，将初级等离子体放电引导到挡板组件中，从而产生离开挡板组件的次级等离子体放电。施加在次级等离子体放电中包含的离子上的电场的强度降低。这样做时，电场强度的降低会使离子以不足以对晶片上形成的半导体器件造成损害的能量轰击晶片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式