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1. 发明授权

US07037846B2 Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing 有权
标题翻译：用于微喷射的方法和装置，等离子体处理中的低能离子产生和输送
公开(公告)号：US07037846B2
公开(公告)日：2006-05-02
申请号：US10752906
申请日：2004-01-06
申请人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
发明人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/32192 , H01J37/321
摘要： A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
摘要翻译：公开了一种用于产生和传送用于半导体晶片的等离子体处理的低能离子的方法。在本发明的示例性实施例中，该方法包括从气体种类产生等离子体以产生等离子体排气。然后将等离子体废气引入到包含晶片的处理室中。当等离子体被引入处理室中时，通过激活补充离子源来提高等离子体排气的离子含量，由此在其中产生初级等离子体放电。然后，将初级等离子体放电引导到挡板组件中，从而产生离开挡板组件的次级等离子体放电。施加在次级等离子体放电中包含的离子上的电场的强度降低。这样做时，电场强度的降低会使离子以不足以对晶片上形成的半导体器件造成损害的能量轰击晶片。

2. 发明授权

US06761796B2 Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing 有权
标题翻译：用于等离子体处理中的微喷射低能量离子生成传输的方法和装置
公开(公告)号：US06761796B2
公开(公告)日：2004-07-13
申请号：US09905043
申请日：2001-07-13
申请人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
发明人： Aseem Kumar Srivastava , Herbert Harold Sawin , Palanikumaran Sakthievel
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/321
摘要： A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
摘要翻译：公开了一种用于产生和传送用于半导体晶片的等离子体处理的低能离子的方法。在本发明的示例性实施例中，该方法包括从气体种类产生等离子体以产生等离子体排气。然后将等离子体废气引入到包含晶片的处理室中。当等离子体被引入处理室中时，通过激活补充离子源来提高等离子体排气的离子含量，由此在其中产生初级等离子体放电。然后，将初级等离子体放电引导到挡板组件中，从而产生离开挡板组件的次级等离子体放电。施加在次级等离子体放电中包含的离子上的电场的强度降低。这样做时，电场强度的降低会使离子以不足以对晶片上形成的半导体器件造成损害的能量轰击晶片。

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