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    • 7. 发明授权
    • Circuit for dynamic isolation of integrated circuits
    • 用于动态隔离集成电路的电路
    • US5159207A
    • 1992-10-27
    • US618281
    • 1990-11-28
    • Antoine PavlinThierry SicardMarc Simon
    • Antoine PavlinThierry SicardMarc Simon
    • H01L21/761H01L21/822H01L27/02H01L27/04H01L27/08H01L27/088H01L29/78H03K17/081
    • H03K17/08104H01L27/0218H01L27/0251Y10T307/839
    • A dynamic isolation circuit belonging to a monolithic integrated circuit comprising lateral transistors and vertical transistors. The lateral transistors are isolated by an isolating region connected to an isolating potential (V.sub.iso), these lateral transistors being connected up to voltages of a first polarity relative to a reference voltage (GND), the power terminal connected up to the rear face normally being at a potential (V.sub.out) of the first polarity relative to the reference voltage. This circuit comprises a sign-detector (D) for detecting the sign of the potential of the rear face relative to the reference voltage, at least one lateral transistor (S1) to connect the isolating potential to the reference potential when the potential of the rear face is of the first polarity relative to the reference potential, and at least one vertical transistor (S2) to connect the isolating potential to the potential of the rear face when the potential of the rear face is of the second polarity relative to the reference potential.
    • 属于单片集成电路的动态隔离电路,其包括横向晶体管和垂直晶体管。 横向晶体管通过连接到隔离电位(Viso)的隔离区隔离,这些横向晶体管相对于参考电压(GND)连接到第一极性的电压,通常连接到后面的电源端子 处于相对于参考电压的第一极性的电位(Vout)。 该电路包括用于检测背面相对于参考电压的电位的符号的符号检测器(D),至少一个横向晶体管(S1),以在后方的电位将绝缘电位连接到参考电位 面相对于参考电位具有第一极性,以及至少一个垂直晶体管(S2),用于当背面的电位相对于参考电位具有第二极性时,将隔离电位连接到后表面的电位 。