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1. 发明授权

US5159207A Circuit for dynamic isolation of integrated circuits 失效
标题翻译：用于动态隔离集成电路的电路
公开(公告)号：US5159207A
公开(公告)日：1992-10-27
申请号：US618281
申请日：1990-11-28
申请人： Antoine Pavlin , Thierry Sicard , Marc Simon
发明人： Antoine Pavlin , Thierry Sicard , Marc Simon
IPC分类号： H01L21/761 , H01L21/822 , H01L27/02 , H01L27/04 , H01L27/08 , H01L27/088 , H01L29/78 , H03K17/081
CPC分类号： H03K17/08104 , H01L27/0218 , H01L27/0251 , Y10T307/839
摘要： A dynamic isolation circuit belonging to a monolithic integrated circuit comprising lateral transistors and vertical transistors. The lateral transistors are isolated by an isolating region connected to an isolating potential (V.sub.iso), these lateral transistors being connected up to voltages of a first polarity relative to a reference voltage (GND), the power terminal connected up to the rear face normally being at a potential (V.sub.out) of the first polarity relative to the reference voltage. This circuit comprises a sign-detector (D) for detecting the sign of the potential of the rear face relative to the reference voltage, at least one lateral transistor (S1) to connect the isolating potential to the reference potential when the potential of the rear face is of the first polarity relative to the reference potential, and at least one vertical transistor (S2) to connect the isolating potential to the potential of the rear face when the potential of the rear face is of the second polarity relative to the reference potential.
摘要翻译：属于单片集成电路的动态隔离电路，其包括横向晶体管和垂直晶体管。横向晶体管通过连接到隔离电位（Viso）的隔离区隔离，这些横向晶体管相对于参考电压（GND）连接到第一极性的电压，通常连接到后面的电源端子处于相对于参考电压的第一极性的电位（Vout）。该电路包括用于检测背面相对于参考电压的电位的符号的符号检测器（D），至少一个横向晶体管（S1），以在后方的电位将绝缘电位连接到参考电位面相对于参考电位具有第一极性，以及至少一个垂直晶体管（S2），用于当背面的电位相对于参考电位具有第二极性时，将隔离电位连接到后表面的电位。

2. 发明申请

US20110026171A1 Electronic Device for Protecting Against a Polarity Reversal of a DC Power Supply Voltage, and its Application to Motor Vehicles 有权
标题翻译：用于防止直流电源电压极性反转的电子装置及其在机动车辆上的应用
公开(公告)号：US20110026171A1
公开(公告)日：2011-02-03
申请号：US12842766
申请日：2010-07-23
申请人： Antoine Pavlin
发明人： Antoine Pavlin
IPC分类号： H02H7/06 , H02H3/00
CPC分类号： H01L27/0248 , H01L27/088 , H02H11/003
摘要： The electronic device for protecting against a polarity reversal of a DC power supply voltage comprises, produced within one and the same integrated circuit, an N-channel main transistor (TP) mounted on the line of expected positive polarity of the power supply voltage and command means (MCM) for the main transistor comprising a charging pump circuit (CP), associated with a dynamic biasing circuit (MCTRL) for the substrate regions of active components connected to the main transistor.
摘要翻译：用于防止直流电源电压的极性反转的电子装置包括在同一个集成电路内产生的N沟道主晶体管（TP），其安装在电源电压和指令的预期正极性线上用于主晶体管的装置（MCM）包括与用于连接到主晶体管的有源元件的衬底区域的动态偏置电路（MCTRL）相关联的充电泵电路（CP）。

3. 发明授权

US4894568A Gate control circuit for a switching power MOS transistor 失效
标题翻译：开关功率MOS晶体管的栅极控制电路
公开(公告)号：US4894568A
公开(公告)日：1990-01-16
申请号：US305333
申请日：1989-02-02
申请人： Antoine Pavlin
发明人： Antoine Pavlin
IPC分类号： H01L29/78 , H01L27/04 , H03K17/04 , H03K17/0412 , H03K17/042 , H03K17/567 , H03K17/687
CPC分类号： H03K17/04206 , H03K17/04123 , H03K17/567 , H03K17/6877
摘要： A gate control circuit for a power MOS transistor (1), the first main electrode (D) of which is connected to a high voltage (V.sub.CC) through a load (L), the second main electrode (S) of which is grounded and the gate (G) of which is connected, during the switching ON period, to a low voltage source (V.sub.DD), comprises a switch (S1) for connecting at the switching ON of the power MOS transistor its first main electrode to its gate.
摘要翻译：一种用于功率MOS晶体管（1）的栅极控制电路，其第一主电极（D）通过负载（L）连接到高电压（VCC），其第二主电极（S）接地，其栅极（G）在开关导通期间连接到低压源（VDD），包括开关（S1），用于在功率MOS晶体管的第一主电极的接通时与其栅极连接。

4. 发明授权

US08547671B2 Electronic device for protecting against a polarity reversal of a DC power supply voltage, and its application to motor vehicles 有权
标题翻译：用于防止直流电源电压的极性反转的电子装置及其应用于机动车辆
公开(公告)号：US08547671B2
公开(公告)日：2013-10-01
申请号：US12842766
申请日：2010-07-23
申请人： Antoine Pavlin
发明人： Antoine Pavlin
IPC分类号： H02H3/00 , H02H3/18
CPC分类号： H01L27/0248 , H01L27/088 , H02H11/003
摘要： The electronic device for protecting against a polarity reversal of a DC power supply voltage comprises, produced within one and the same integrated circuit, an N-channel main transistor (TP) mounted on the line of expected positive polarity of the power supply voltage and command means (MCM) for the main transistor comprising a charging pump circuit (CP), associated with a dynamic biasing circuit (MCTRL) for the substrate regions of active components connected to the main transistor.
摘要翻译：用于防止直流电源电压的极性反转的电子装置包括在同一个集成电路内产生的N沟道主晶体管（TP），其安装在电源电压和指令的预期正极性线上用于主晶体管的装置（MCM）包括与用于连接到主晶体管的有源元件的衬底区域的动态偏置电路（MCTRL）相关联的充电泵电路（CP）。

5. 发明授权

US5729443A Switched current regulator with improved power switch control mechanism 失效
标题翻译：开关电流调节器具有改进的电源开关控制机制
公开(公告)号：US5729443A
公开(公告)日：1998-03-17
申请号：US534497
申请日：1995-09-27
申请人： Antoine Pavlin
发明人： Antoine Pavlin
IPC分类号： H02M3/28 , H02M3/335
CPC分类号： H02M3/3385 , H02M3/3381
摘要： A flyback-type switched current regulator, comprising first and second coupled windings and a circuit for connecting the first winding to a voltage source as soon as the windings are demagnetized. The regulator further comprises a current sensor that senses the current flowing through the first winding; a switch that disconnects the first winding from the voltage source when the first current in the first winding reaches a reference value, whereby the first winding is switched according to a duty cycle; and a circuit that varies the reference value in accordance with the duty cycle.
摘要翻译：一种回扫式开关电流调节器，包括第一和第二耦合绕组以及一旦线圈退磁就将第一绕组连接到电压源的电路。调节器还包括感测流过第一绕组的电流的电流传感器; 当第一绕组中的第一电流达到参考值时，断开第一绕组与电压源的开关，由此根据占空比切换第一绕组; 以及根据占空比改变参考值的电路。

6. 发明授权

US4954728A Stabilized generator for supplying a threshold voltage to a MOS transistor 失效
标题翻译：用于向MOS晶体管提供阈值电压的稳定发生器
公开(公告)号：US4954728A
公开(公告)日：1990-09-04
申请号：US318870
申请日：1989-03-06
申请人： Antoine Pavlin
发明人： Antoine Pavlin
IPC分类号： H01L21/8234 , G05F3/24 , H01L27/088 , H03K5/08 , H03K17/30
CPC分类号： G05F3/245
摘要： A stabilized bias generator supplies a threshold voltage to a MOS transistor fabricated on a common integrated circuit device. The bias generator automatically compensates for changes in the threshold voltage of the MOS transistor caused by varying operating parameters, changes in temperature or manufacturing parameters. A first comparator of a matched pair of comparators receives a biasing voltage and includes first and second inputs respectively receiving a variable voltage and a reference voltage. The second comparator of the matched pair has first and second inputs interconnected to receive the reference voltage. One of a pair of matched inverters has in input receiving an output from the first comparator and supplies at an output thereof the threshold voltage and the MOS transistor. The other of the matched pair of inverters is connected to receive an output from the second comparator. A third inverter is connected to receive an output from the second inverter and output the biasing voltage to the MOS transistor and to the first and second comparators. The third inverter is selected to have a threshold voltage substantially equal to the threshold voltage of the MOS transistor.
摘要翻译：稳压偏压发生器为制造在公共集成电路器件上的MOS晶体管提供阈值电压。偏置发生器自动补偿由变化的工作参数，温度变化或制造参数引起的MOS晶体管阈值电压的变化。匹配的一对比较器的第一比较器接收偏置电压，并且包括分别接收可变电压和参考电压的第一和第二输入。匹配对的第二比较器具有互连的第一和第二输入以接收参考电压。一对匹配的反相器之一具有接收来自第一比较器的输出的输入，并在其输出端提供阈值电压和MOS晶体管。匹配的一对反相器中的另一个被连接以接收来自第二比较器的输出。连接第三反相器以接收来自第二反相器的输出，并将偏置电压输出到MOS晶体管以及第一和第二比较器。选择第三反相器具有基本上等于MOS晶体管的阈值电压的阈值电压。

7. 发明授权

US06696871B2 Circuit for controlling a power MOS transistor and detecting a load in series with the transistor 有权
标题翻译：用于控制功率MOS晶体管和检测与晶体管串联的负载的电路
公开(公告)号：US06696871B2
公开(公告)日：2004-02-24
申请号：US10165088
申请日：2002-06-06
申请人： Philippe Bienvenu , Antoine Pavlin
发明人： Philippe Bienvenu , Antoine Pavlin
IPC分类号： H03K406
CPC分类号： H03K17/063 , H03K17/18
摘要： The detection of the presence of a load associated with a power MOS transistor integrated with its control circuit using a filtering time delay in generating a detection signal with respect to the occurrence of a turn-off control order of the power transistor, and where the filtering time delay is controlled with the power transistor switching time.
摘要翻译：使用滤波时间延迟来检测与其控制电路集成的功率MOS晶体管相关联的负载，以产生关于功率晶体管的关断控制次序的发生的检测信号，并且其中滤波时间延迟由功率晶体管切换时间控制。

8. 发明授权

US5438286A Circuit for detecting an open load 失效
标题翻译：用于检测开路负载的电路
公开(公告)号：US5438286A
公开(公告)日：1995-08-01
申请号：US138849
申请日：1993-10-19
申请人： Antoine Pavlin , Jean-Louis Siaudeau
发明人： Antoine Pavlin , Jean-Louis Siaudeau
IPC分类号： H03K17/00 , H03K17/082 , H03K17/18 , H03K17/687 , G05F1/573 , H02H3/087
CPC分类号： H03K17/0824 , H03K17/18
摘要： A circuit for the detection of an open load for a power MOS transistor is designed to operate in a switching mode. The MOS transistor is partitioned into two transistors disposed in parallel. The second transistor has a resistance in the conductive state higher than the first transistor. The circuit includes circuitry for enabling only the second transistor when the current is within a low value range, and circuitry for detecting an open load when the circuit is operating within the low current range.
摘要翻译：用于检测功率MOS晶体管的开路负载的电路被设计为以开关模式操作。 MOS晶体管被分成两个平行布置的晶体管。第二晶体管的导通状态的电阻高于第一晶体管。该电路包括仅在第一晶体管处于低电平范围内时仅使第二晶体管实现的电路，以及当电路在低电流范围内工作时检测开路负载的电路。

9. 发明申请

US20120081092A1 LOW ELECTROMAGNETIC EMISSION DRIVER 有权
标题翻译：低电磁排放驱动器
公开(公告)号：US20120081092A1
公开(公告)日：2012-04-05
申请号：US13243268
申请日：2011-09-23
申请人： Antoine Pavlin , Philippe Bienvenu
发明人： Antoine Pavlin , Philippe Bienvenu
IPC分类号： G05F1/00
CPC分类号： G05F1/46
摘要： The disclosure concerns circuitry for controlling a power transistor of a drive circuit arranged to drive an electrical component, the circuitry comprising: a variable current source adapted to set the level of a current for charging a control terminal of said power transistor; and a control circuit adapted to control said variable current source in a continuous manner based on a feedback voltage.
摘要翻译：本公开涉及用于控制布置成驱动电气部件的驱动电路的功率晶体管的电路，该电路包括：可变电流源，适于设定用于对所述功率晶体管的控制端充电的电流电平; 以及控制电路，其适于基于反馈电压以连续的方式控制所述可变电流源。

10. 发明授权

US06483376B1 Voltage generation circuit of charge pump type, with a self-oscillating control circuit 有权
标题翻译：电荷泵型电压产生电路，具有自振荡控制电路
公开(公告)号：US06483376B1
公开(公告)日：2002-11-19
申请号：US09145674
申请日：1998-09-02
申请人： Philippe Bienvenu , Antoine Pavlin
发明人： Philippe Bienvenu , Antoine Pavlin
IPC分类号： G05F110
CPC分类号： H02M3/073 , H03K17/063
摘要： The present invention relates to a potential generation circuit of charge pump type, this circuit including at least two stages formed of capacitors and of circuitry for isolating or interconnecting the capacitors, to generate an output potential by charge transfer between the stages. The circuit is driven by two control potentials oscillating between a first and a second value. The circuit includes a self-oscillating control circuit to generate control potentials, to eliminate time delays between charge and discharge phases.
摘要翻译：本发明涉及电荷泵型的电位产生电路，该电路包括由电容器形成的至少两级和用于隔离或互连电容器的电路，以通过电荷转移产生输出电位。电路由在第一和第二值之间振荡的两个控制电位驱动。该电路包括产生控制电位的自振荡控制电路，以消除充电和放电阶段之间的时间延迟。

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