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1. 发明申请

US20130328101A1 METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP 有权
标题翻译：生产光电子半导体芯片的方法及其半导体芯片
公开(公告)号：US20130328101A1
公开(公告)日：2013-12-12
申请号：US13883782
申请日：2011-10-21
申请人： Peter Stauss , Alexander Behres
发明人： Peter Stauss , Alexander Behres
IPC分类号： H01L33/26
CPC分类号： H01L33/26 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L33/0066 , H01L33/0079 , H01L33/12 , H01L2924/0002 , H01L2933/0091 , H01S5/3201 , H01S2301/173 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.
摘要翻译：制造具有基于材料体系AlInGaP的半导体层堆叠的光电子半导体芯片的方法包括制备具有硅表面的生长衬底，在生长衬底上布置压缩松弛缓冲层堆叠，以及变质地外延生长半导体层堆叠在缓冲层堆叠上，半导体层堆叠具有产生辐射的活性层。

2. 发明授权

US08502267B2 Optoelectronic semiconductor component 有权
标题翻译：光电半导体元件
公开(公告)号：US08502267B2
公开(公告)日：2013-08-06
申请号：US13142885
申请日：2010-01-05
申请人： Alexander Behres , Matthias Sabathil
发明人： Alexander Behres , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/0062 , H01L33/0075 , H01L33/30 , H01L33/32 , H01L2924/0002 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.
摘要翻译：光电子半导体部件包括发射辐射的有源层，由包覆层包围的有源层，其中包层和/或有源层包括含铟磷化合物半导体材料，并且磷化物半导体材料包含在元素Bi或Sb中的至少一种作为主要组V的附加元素。

3. 发明授权

US07317202B2 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
标题翻译：用于制造外延结构元件层序列和光电子半导体芯片的方法
公开(公告)号：US07317202B2
公开(公告)日：2008-01-08
申请号：US10952154
申请日：2004-09-28
申请人： Alexander Behres , Norbert Linder , Bernd Mayer
发明人： Alexander Behres , Norbert Linder , Bernd Mayer
IPC分类号： H01L31/00 , H01L33/00
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02543 , H01L33/0062
摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.
摘要翻译：一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料，第二组V元件，其不同于第一组V元件。在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有不同的组合物彼此并且包含第一和第二组V元素。

4. 发明申请

US20050116242A1 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
标题翻译：用于制造外延结构元件层序列和光电子半导体芯片的方法
公开(公告)号：US20050116242A1
公开(公告)日：2005-06-02
申请号：US10952154
申请日：2004-09-28
申请人： Alexander Behres , Norbert Linder , Bernd Mayer
发明人： Alexander Behres , Norbert Linder , Bernd Mayer
IPC分类号： H01S5/343 , C30B25/02 , C30B29/40 , H01L21/20 , H01L33/00 , H01L21/00 , H01L29/22
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02543 , H01L33/0062
摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.
摘要翻译：一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料，第二组V元件，其不同于第一组V元件。在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有不同的组合物彼此并且包含第一和第二组V元素。

5. 发明授权

US09080237B2 Layer depositing device and method for operating it 有权
标题翻译：层沉积装置及其操作方法
公开(公告)号：US09080237B2
公开(公告)日：2015-07-14
申请号：US12240270
申请日：2008-09-29
申请人： Alexander Behres
发明人： Alexander Behres
IPC分类号： C23C16/44 , C23C16/54 , C23C16/455 , C23C16/458 , C23C14/50 , C23C16/30 , C30B25/08 , C30B25/12 , C30B25/14
CPC分类号： C23C16/45551 , C23C14/505 , C23C16/301 , C23C16/306 , C23C16/4584 , C30B25/08 , C30B25/12 , C30B25/14
摘要： A layer depositing device comprises a chamber (10) having a substrate carrier (12) for receiving at least one substrate (13) to be coated, and a process gas space (11), comprising a partition (23) that separates a first segment (21) of the process gas space (11) from a second segment (22) of the process gas space (11). The layer depositing device has a device (44) for moving the substrate (13) relative to the partition (23).
摘要翻译：层沉积设备包括具有用于接收待涂覆的至少一个衬底（13）的衬底载体（12）的腔室（10）和包括分隔件（23）的工艺气体空间（11）（11）的处理气体空间（11）的第二段（22）的位置（21）。层沉积装置具有用于相对于隔板（23）移动衬底（13）的装置（44）。

6. 发明申请

US20090302307A1 LED Semiconductor Body 有权
标题翻译： LED半导体
公开(公告)号：US20090302307A1
公开(公告)日：2009-12-10
申请号：US12375528
申请日：2007-07-27
申请人： Günther Grönninger , Christian Jung , Peter Heidborn , Alexander Behres
发明人： Günther Grönninger , Christian Jung , Peter Heidborn , Alexander Behres
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0079 , H01L33/30 , H01L33/46
摘要： An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.
摘要翻译： LED半导体本体包括半导体层序列，其包括旨在产生辐射的量子结构并且包括至少一个量子层和至少一个阻挡层，其中量子层和阻挡层以相互相反的数学符号应变。

7. 发明申请

US20090122823A1 Monolithically integrated laser diode chip having a construction as a multiple beam laser diode 有权
标题翻译：具有构造为多光束激光二极管的单片集成激光二极管芯片
公开(公告)号：US20090122823A1
公开(公告)日：2009-05-14
申请号：US12217100
申请日：2008-06-30
申请人： Martin Muller , Gunther Gronninger , Alexander Behres
发明人： Martin Muller , Gunther Gronninger , Alexander Behres
IPC分类号： H01S5/026 , H01S5/323
CPC分类号： H01S5/4043 , H01S5/3095 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/4018
摘要： A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.
摘要翻译：具有构造为多光束激光二极管的单片集成激光二极管芯片，其在由GaAs构成的半导体衬底（3）上具有至少两个激光堆叠（4a，4b，4c）每个都包含活动区域（7）。有源区（7）分别布置在波导层（8）之间。每个波导层（8）在远离有源区的一侧与包层（6）相邻。至少一个激光堆叠（4a，4b，4c）的至少一个波导层（8）或覆层（6）包括Al x Ga 1-x As，其中0≤x≤1，以及至少一种附加材料来自主组III或V，使得包括至少一个附加元件的至少一个波导层（8）或包层（6）与由GaAs构成的半导体衬底（3）之间的晶格失配减小。这增加了激光二极管芯片的寿命。

8. 发明申请

US20060194355A1 Laser diode bar provided with a parallel connected diode for bridging said laser siode bar in case of failure 审中-公开
标题翻译：激光二极管条带有一个并联连接的二极管，用于在发生故障的情况下桥接所述激光条形棒
公开(公告)号：US20060194355A1
公开(公告)日：2006-08-31
申请号：US10540902
申请日：2003-11-06
申请人： Franz Eberhard , Gerhard Herrmann , Josip Maric , Michael Schwind , Martin Behringer , Alexander Behres
发明人： Franz Eberhard , Gerhard Herrmann , Josip Maric , Michael Schwind , Martin Behringer , Alexander Behres
IPC分类号： H01L21/00
CPC分类号： H01S5/0261 , H01S5/0216 , H01S5/02272 , H01S5/042 , H01S5/0425 , H01S5/06825 , H01S5/4025
摘要： A laser diode component comprising a laser diode bar on which a specific operating voltage is impressed during operation and with which a bridging element is connected in parallel, which bridging element is in a current-blocking state when the specific operating voltage is impressed on the associated laser diode bar and which bridging element changes over to a current-conducting state as soon as the voltage drop across the laser diode bar exceeds the operating voltage by a predefined voltage value. A circuit arrangement comprising a plurality of such laser diode components which are connected in series is furthermore specified.
摘要翻译：一种激光二极管部件，包括激光二极管条，其中在操作期间施加特定工作电压并且并联连接桥接元件，当特定工作电压施加在相关联的该桥接元件时，该桥接元件处于电流阻断状态激光二极管条，并且一旦跨越激光二极管条的电压降超过预定电压值的工作电压，桥接元件就会转换到导通状态。进一步规定包括串联连接的多个这样的激光二极管部件的电路装置。

9. 发明授权

US09093604B2 Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip 有权
标题翻译：制造光电子半导体芯片的方法以及这种半导体芯片
公开(公告)号：US09093604B2
公开(公告)日：2015-07-28
申请号：US13883782
申请日：2011-10-21
申请人： Peter Stauβ , Alexander Behres
发明人： Peter Stauβ , Alexander Behres
IPC分类号： H01L33/26 , H01L21/02 , H01L33/00 , H01L33/12 , H01S5/32
CPC分类号： H01L33/26 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L33/0066 , H01L33/0079 , H01L33/12 , H01L2924/0002 , H01L2933/0091 , H01S5/3201 , H01S2301/173 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.
摘要翻译：制造具有基于材料体系AlInGaP的半导体层堆叠的光电子半导体芯片的方法包括制备具有硅表面的生长衬底，在生长衬底上布置压缩松弛缓冲层堆叠，以及变质地外延生长半导体层堆叠在缓冲层堆叠上，半导体层堆叠具有产生辐射的活性层。

10. 发明授权

US08405065B2 LED semiconductor body 有权
标题翻译： LED半导体体
公开(公告)号：US08405065B2
公开(公告)日：2013-03-26
申请号：US12375528
申请日：2007-07-27
申请人： Günther Grönninger , Christian Jung , Peter Heidborn , Alexander Behres
发明人： Günther Grönninger , Christian Jung , Peter Heidborn , Alexander Behres
IPC分类号： H01L31/00 , H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0079 , H01L33/30 , H01L33/46
摘要： An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.
摘要翻译： LED半导体本体包括半导体层序列，其包括旨在产生辐射的量子结构并且包括至少一个量子层和至少一个阻挡层，其中量子层和阻挡层以相互相反的数学符号应变。

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