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1. 发明授权

US08586194B2 Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same 有权
标题翻译：表现出巨磁场诱导变形的多晶泡沫体及其制造和使用方法
公开(公告)号：US08586194B2
公开(公告)日：2013-11-19
申请号：US12840203
申请日：2010-07-20
申请人： Peter Mullner , Markus Chmielus , Cassie Witherspoon , David C. Dunand , Xuexi Zhang , Yuttanant Boonyongmaneerat
发明人： Peter Mullner , Markus Chmielus , Cassie Witherspoon , David C. Dunand , Xuexi Zhang , Yuttanant Boonyongmaneerat
IPC分类号： B32B5/18
CPC分类号： C22C19/00 , B22F3/1115 , B22F3/1121 , C22C1/0433 , C22C38/00 , C22C2202/02 , H01F1/0308 , Y10T428/12479 , Y10T428/12681 , Y10T428/12771 , Y10T428/12861 , Y10T428/12931 , Y10T428/12951
摘要： Magnetic materials and methods exhibit large magnetic-field-induced deformation/strain (MFIS) through the magnetic-field-induced motion of crystallographic interfaces. The preferred materials are porous, polycrystalline composite structures of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. The materials are preferably made from magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga, formed into an open-pore foam, for example, by space-holder technique. Removal of constraints that interfere with MFIS has been accomplished by introducing pores with sizes similar to grains, resulting in MFIS values of 0.12% in polycrystalline Ni—Mn—Ga foams, close to the best commercial magnetostrictive materials. Further removal of constraints has been accomplished by introducing pores smaller than the grain size, dramatically increasing MFIS to 2.0-8.7%. These strains, which remain stable over >200,000 cycles, are much larger than those of any polycrystalline, active material.
摘要翻译：磁性材料和方法通过磁场诱导的晶体界面运动表现出大的磁场诱导的变形/应变（MFIS）。优选的材料是通过支柱连接的节点的多孔，多晶复合结构，其中支柱可以是单晶或多晶。这些材料优选由例如通过空间保持器技术形成为开孔泡沫的多晶Ni-Mn-Ga的磁性形状记忆合金制成。通过引入尺寸与颗粒大小相似的孔，可以去除干扰MFIS的约束，导致多晶Ni-Mn-Ga泡沫中的MFIS值为0.12％，接近最好的商业磁致伸缩材料。通过引入小于晶粒尺寸的孔，已经进一步去除约束，使MFIS显着提高到2.0-8.7％。这些菌株在超过20万次循环中保持稳定，远远大于任何多晶活性物质。

2. 发明申请

US20110064965A1 POLYCRYSTALLINE FOAMS EXHIBITING GIANT MAGNETIC-FIELD-INDUCED DEFORMATION AND METHODS OF MAKING AND USING SAME 有权
标题翻译：多晶胶片展示巨大的磁场诱导性变形及其制造和使用方法
公开(公告)号：US20110064965A1
公开(公告)日：2011-03-17
申请号：US12840203
申请日：2010-07-20
申请人： Peter Mullner , Markus Chmielus , Cassie Witherspoon , David C. Dunand , Xuexi Zhang , Yuttanant Boonyongmaneerat
发明人： Peter Mullner , Markus Chmielus , Cassie Witherspoon , David C. Dunand , Xuexi Zhang , Yuttanant Boonyongmaneerat
IPC分类号： B32B15/01 , H01F1/04
CPC分类号： C22C19/00 , B22F3/1115 , B22F3/1121 , C22C1/0433 , C22C38/00 , C22C2202/02 , H01F1/0308 , Y10T428/12479 , Y10T428/12681 , Y10T428/12771 , Y10T428/12861 , Y10T428/12931 , Y10T428/12951
摘要： Magnetic materials and methods exhibit large magnetic-field-induced deformation/strain (MFIS) through the magnetic-field-induced motion of crystallographic interfaces. The preferred materials are porous, polycrystalline composite structures of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. The materials are preferably made from magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga, formed into an open-pore foam, for example, by space-holder technique. Removal of constraints that interfere with MFIS has been accomplished by introducing pores with sizes similar to grains, resulting in MFIS values of 0.12% in polycrystalline Ni—Mn—Ga foams, close to the best commercial magnetostrictive materials. Further removal of constraints has been accomplished by introducing pores smaller than the grain size, dramatically increasing MFIS to 2.0-8.7%. These strains, which remain stable over >200,000 cycles, are much larger than those of any polycrystalline, active material.
摘要翻译：磁性材料和方法通过磁场诱导的晶体界面运动表现出大的磁场诱导的变形/应变（MFIS）。优选的材料是通过支柱连接的节点的多孔，多晶复合结构，其中支柱可以是单晶或多晶。这些材料优选由例如通过空间保持器技术形成为开孔泡沫的多晶Ni-Mn-Ga的磁性形状记忆合金制成。通过引入尺寸与颗粒大小相似的孔，可以去除干扰MFIS的约束，导致多晶Ni-Mn-Ga泡沫中的MFIS值为0.12％，接近最好的商业磁致伸缩材料。通过引入小于晶粒尺寸的孔，已经进一步去除约束，使MFIS显着提高到2.0-8.7％。这些菌株在超过20万次循环中保持稳定，远远大于任何多晶活性物质。

3. 发明授权

US07964290B2 Magnetic material with large magnetic-field-induced deformation 有权
标题翻译：具有大磁场诱导变形的磁性材料
公开(公告)号：US07964290B2
公开(公告)日：2011-06-21
申请号：US12203112
申请日：2008-09-02
申请人： Peter Mullner , Markus Chmielus , David C. Dunand , Yuttanant Boonyongmaneerat
发明人： Peter Mullner , Markus Chmielus , David C. Dunand , Yuttanant Boonyongmaneerat
IPC分类号： B32B5/18
CPC分类号： C22C19/00 , C22C38/00 , H01F1/0308 , H01F1/408 , Y10T428/12479 , Y10T428/12681 , Y10T428/12771 , Y10T428/12861 , Y10T428/12931 , Y10T428/12944 , Y10T428/12951 , Y10T428/249953
摘要： A magnetic materials construct and a method to produce the construct are disclosed. The construct exhibits large magnetic-field-induced deformation through the magnetic-field-induced motion of crystallographic interfaces. The construct is a porous, polycrystalline composite structure of nodes connected by struts wherein the struts may be monocrystalline or polycrystalline. If the struts are polycrystalline, they have a “bamboo” microstructure wherein the grain boundaries traverse the entire width of the strut. The material from which the construct is made is preferably a magnetic shape memory alloy, including polycrystalline Ni—Mn—Ga. The construct is preferably an open-pore foam. The foam is preferably produced with a space-holder technique. Space holders may be dissolvable ceramics and salts including NaAlO2.
摘要翻译：公开了一种磁性材料结构和一种制备该构造体的方法。该结构通过磁场诱导的晶体界面运动表现出大的磁场诱导变形。该结构是通过支柱连接的节点的多孔多晶复合结构，其中支柱可以是单晶或多晶。如果支柱是多晶的，则它们具有“竹”微结构，其中晶界穿过支柱的整个宽度。制造构造物的材料优选为包括多晶Ni-Mn-Ga的磁性形状记忆合金。该构造物优选为开孔泡沫。泡沫优选用空间保持器技术制造。空间支架可以是可溶解的陶瓷和盐，包括NaAlO 2。

4. 发明授权

US09091251B1 Actuation method and apparatus, micropump, and PCR enhancement method 有权
标题翻译：激活方法和装置，微型泵和PCR增强方法
公开(公告)号：US09091251B1
公开(公告)日：2015-07-28
申请号：US13550386
申请日：2012-07-16
申请人： Kari Ullakko , Peter Mullner , Greg Hampikian , Aaron Smith
发明人： Kari Ullakko , Peter Mullner , Greg Hampikian , Aaron Smith
IPC分类号： G01N21/75 , F03G7/06 , F04B17/00
CPC分类号： F03G7/065 , F03G7/005 , F04B19/006 , G01N21/75
摘要： An actuation apparatus includes at least one magnetic shape memory (MSM) element containing a material configured to expand and/or contract in response to exposure to a magnetic field. Among other things, the MSM element may be configured to pump fluid through a micropump by expanding and/or contracting in response to the magnetic field. The magnetic field may rotate about an axis of rotation and exhibit a distribution having a component substantially perpendicular to the axis of rotation. Further, the magnetic field distribution may include at least two components substantially orthogonal to one another lying in one or more planes perpendicular to the axis of rotation. The at least one MSM element may contain nickel, manganese, and gallium. A polymerase chain reaction (PCR) may be enhanced by contacting a PCR reagent and DNA material with the MSM element.
摘要翻译：致动装置包括至少一个磁形状存储器（MSM）元件，其包含被配置为响应于暴露于磁场而膨胀和/或收缩的材料。除此之外，MSM元件可以被配置成通过响应于磁场的膨胀和/或收缩来泵送流体通过微型泵。磁场可以围绕旋转轴线旋转并且具有基本上垂直于旋转轴线的分量的分布。此外，磁场分布可以包括在垂直于旋转轴线的一个或多个平面中彼此基本上正交的至少两个分量。至少一个MSM元件可以包含镍，锰和镓。聚合酶链反应（PCR）可以通过使PCR试剂和DNA材料与MSM元件接触来增强。

5. 发明授权

US08233314B2 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials 有权
标题翻译：多状态存储器和包括磁阻或磁弹性材料的多功能器件
公开(公告)号：US08233314B2
公开(公告)日：2012-07-31
申请号：US12773831
申请日：2010-05-04
申请人： Peter Mullner , William B Knowlton
发明人： Peter Mullner , William B Knowlton
IPC分类号： G11C11/00
CPC分类号： H01L41/12 , G11C11/14 , G11C11/5607 , H01L41/20 , Y10T29/49764
摘要： Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.
摘要翻译：公开了能够对具有大于两个状态的多状态元件进行数据写入和读取数据的装置和方法。元件可以由磁性和/或磁弹性材料制成，包括例如磁性形状记忆合金或耦合磁性和晶体状态的其它材料。写入过程优选通过施加磁场和/或机械动作来进行。读取过程优选通过原子力显微镜，磁力显微镜，自旋极化电子，磁光克尔效应，光学干涉测量或其他方法或其它方法/效果进行。多状态元件的多功能（每个表示功能的结晶学，磁学和形状状态）允许包括读取和写入，感测和指示以及感测和控制的同时操作。本发明的实施例可以用于例如用于存储，修改和访问设备，传感器，致动器，逻辑和存储器应用的数据。实施例对于非易失性存储器或计算机或其它应用中的其它读/写，感测和指示和/或感测和控制功能可能是特别有效的; 两个（或多个）所述多个功能的这种同时操作打开用于设备小型化的新途径。

6. 发明授权

US07710766B2 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials 有权
标题翻译：多状态存储器和包括磁阻或磁弹性材料的多功能器件
公开(公告)号：US07710766B2
公开(公告)日：2010-05-04
申请号：US11940316
申请日：2007-11-14
申请人： Peter Mullner , William B. Knowlton
发明人： Peter Mullner , William B. Knowlton
IPC分类号： G11C11/00
CPC分类号： H01L41/12 , G11C11/14 , G11C11/5607 , H01L41/20 , Y10T29/49764
摘要： Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.
摘要翻译：公开了能够对具有大于两个状态的多状态元件进行数据写入和读取数据的装置和方法。元件可以由磁性和/或磁弹性材料制成，包括例如磁性形状记忆合金或耦合磁性和晶体状态的其它材料。写入过程优选通过施加磁场和/或机械动作来进行。读取过程优选通过原子力显微镜，磁力显微镜，自旋极化电子，磁光克尔效应，光学干涉测量或其他方法或其它方法/效果进行。多状态元件的多功能（每个表示功能的结晶学，磁学和形状状态）允许包括读取和写入，感测和指示以及感测和控制的同时操作。本发明的实施例可以用于例如用于存储，修改和访问设备，传感器，致动器，逻辑和存储器应用的数据。实施例对于非易失性存储器或计算机或其它应用中的其它读/写，感测和指示和/或感测和控制功能可能是特别有效的; 两个（或多个）所述多个功能的这种同时操作打开用于设备小型化的新途径。

7. 发明授权

US08008816B2 Device with magnetoplastic and/or magnetoelastic thin-film transducer and pick-up coil for harvesting energy 有权
标题翻译：具有磁性和/或磁弹性薄膜换能器和拾取线圈的装置，用于收集能量
公开(公告)号：US08008816B2
公开(公告)日：2011-08-30
申请号：US11875732
申请日：2007-10-19
申请人： Greg Hampikian , Peter Mullner
发明人： Greg Hampikian , Peter Mullner
IPC分类号： H01L41/00 , H02N2/00
CPC分类号： H01L41/12
摘要： A magnetoplastic and/or magnetoelastic material transduces linear motion, delivered to it by a mechanical connection, into a change of magnetic field, via twin boundary deformation. A bias magnetic field assures a net change of magnetization during the deformation, and a coil, coaxial with the magnetoplastic/elastic material, couples the magnetic field change to an electrical output. The bias magnetic field or a device that produces strain in a reverse direction resets the magnetomechanical transducer to its initial state. Microgenerators using the magnetoplastic/elastic material may be connected in series or parallel, combined with solar cells, and used to capture energy from passive motion such as random, cyclic or vibrational motion.
摘要翻译：通过双边界变形，磁阻和/或磁弹性材料通过机械连接将线性运动转换成磁场的变化。偏置磁场确保变形期间磁化的净变化，并且与磁/弹性材料同轴的线圈将磁场变化耦合到电输出。偏置磁场或在相反方向产生应变的器件将磁力机械换能器复位到其初始状态。使用磁性/弹性材料的微发电机可以与太阳能电池串联或并联连接，并用于从诸如随机，循环或振动运动的被动运动中捕获能量。

8. 发明申请

US20080225575A1 MULTI-STATE MEMORY AND MULTI-FUNCTIONAL DEVICES COMPRISING MAGNETOPLASTIC OR MAGNETOELASTIC MATERIALS 有权
标题翻译：多状态存储器和包含磁性或磁性材料的多功能器件
公开(公告)号：US20080225575A1
公开(公告)日：2008-09-18
申请号：US11940316
申请日：2007-11-14
申请人： Peter Mullner , William Knowlton
发明人： Peter Mullner , William Knowlton
IPC分类号： G11C11/02 , G11C11/56
CPC分类号： H01L41/12 , G11C11/14 , G11C11/5607 , H01L41/20 , Y10T29/49764
摘要： Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.
摘要翻译：公开了能够对具有大于两个状态的多状态元件进行数据写入和读取数据的装置和方法。元件可以由磁性和/或磁弹性材料制成，包括例如磁性形状记忆合金或耦合磁性和晶体状态的其它材料。写入过程优选通过施加磁场和/或机械动作来进行。读取过程优选通过原子力显微镜，磁力显微镜，自旋极化电子，磁光克尔效应，光学干涉测量或其他方法或其它方法/效果进行。多状态元件的多功能（每个表示功能的结晶学，磁学和形状状态）允许包括读取和写入，感测和指示以及感测和控制的同时操作。本发明的实施例可以用于例如用于存储，修改和访问设备，传感器，致动器，逻辑和存储器应用的数据。实施例对于非易失性存储器或计算机或其它应用中的其它读/写，感测和指示和/或感测和控制功能可能是特别有效的; 两个（或多个）所述多个功能的这种同时操作打开用于设备小型化的新途径。

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