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    • 6. 发明授权
    • Many million pixel image sensor
    • 许多百万像素图像传感器
    • US07906826B2
    • 2011-03-15
    • US11904782
    • 2007-09-28
    • Peter MartinPaul JohnsonChris Sexton
    • Peter MartinPaul JohnsonChris Sexton
    • H01L31/062
    • H01L27/14634G03F7/70433G03F7/70475H01L27/14643H01L27/14647H01L27/14652H01L27/14683
    • A CMOS image sensor with a many million pixel count. Applicants have developed techniques for combining its continuous layer photodiode CMOS sensor technology with CMOS integrated circuit lithography stitching techniques to provide digital cameras with an almost unlimited number of pixels. A preferred CMOS stitching technique exploits the precise alignment accuracy of CMOS stepper processes by using specialized mask sets to repeatedly produce a single pixel array pattern many times on a single silicon wafer with no pixel array discontinuities. The single array patterns are stitched together lithographically to form a pixel array of many million pixels. A continuous multilayer photodiode layer is deposited over the top of the many million pixel array to provide a many million pixel sensor with a fill factor of 100 percent or substantially 100 percent.
    • 具有数百万像素数的CMOS图像传感器。 申请人已经开发出将连续层光电二极管CMOS传感器技术与CMOS集成电路光刻拼接技术相结合的技术,为数码相机提供几乎无限数量的像素。 优选的CMOS拼接技术利用CMOS步进工艺的精确对准精度通过使用专门的掩模组在单个硅晶片上多次重复产生单个像素阵列图案,而不存在像素阵列不连续性。 将单阵列图案光刻地缝合在一起以形成数百万像素的像素阵列。 连续的多层光电二极管层沉积在数百万像素阵列的顶部,以提供百万像素传感器,其填充因子为100%或基本为100%。
    • 8. 发明授权
    • Visible/near infrared image sensor array
    • 可见/近红外图像传感器阵列
    • US07436038B2
    • 2008-10-14
    • US10785833
    • 2004-02-23
    • Michael G. EngelmannCalvin ChaoTzu-Chiang HsiehPeter MartinMilam Pender
    • Michael G. EngelmannCalvin ChaoTzu-Chiang HsiehPeter MartinMilam Pender
    • H01L31/00
    • G01J5/02G01J5/024G01J5/026G01J5/04G01J5/046G01J5/22G01J5/52G01J2005/0077H01L27/14609H01L27/14621H01L27/1463H01L27/14632H01L27/14636H01L27/14643H01L27/14645H01L27/14649H01L27/14687H01L27/14689H01L27/14692H01L31/03685H01L31/03687H01L31/1055H01L31/109H01L31/113H04N5/2351H04N5/2353H04N5/33H04N5/332H04N5/365H04N5/3651H04N5/374H04N5/37455H04N5/378Y02E10/545Y02E10/548
    • A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.
    • 一种用于在宽光谱范围内进行高性能成像的MOS或CMOS传感器,包括红外光谱带的部分。 这些宽光谱范围还可以包括可见光谱的部分或全部,因此传感器具有日光和夜视能力。 该传感器包括在多个像素MOS或CMOS读出阵列上的连续多层光电二极管结构,其中光电二极管结构被选择为包括在近红外光谱范围内的响应。 优选实施例在CMOS读出阵列上结合微晶铜铟二硒化物/硫化镉光电二极管结构。 替代的优选实施例在CMOS读出阵列上结合了微晶硅锗光电二极管结构。 这些实施例中的每一个为增强的灵敏度,像素尺寸和像素数量提供了大大超过GEN III夜视技术的图像性能的夜视。 本发明的另外的优点包括低偏置电压,低功耗,紧凑的封装和辐射硬度。 在特别优选实施例中,CMOS拼接技术用于提供数百万像素焦平面阵列传感器。 没有拼接的本发明的一个实施例是200万像素传感器。 使用缝合技术可获得的其它优选实施例包括在单个晶片上制造的具有2.5亿(或更多)像素的传感器。 这些非常高的像素数传感器的特定应用是用于在低地球轨道卫星中的快速波束转向望远镜的焦平面阵列,其用于在分辨率为0.3米的1500米宽的轨道上进行跟踪。