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    • 8. 发明申请
    • INFRARED DETECTOR SYSTEM AND METHOD
    • 红外探测器系统和方法
    • US20140091218A1
    • 2014-04-03
    • US14118428
    • 2012-07-18
    • Peter ThornePeter Knowles
    • Peter ThornePeter Knowles
    • H04N5/33
    • H04N5/33H04N5/335H04N5/357H04N5/365H04N5/3651H04N5/367H04N5/3745
    • An infrared detector system is described which includes a detector diode array 3 and a non volatile memory 1. The non volatile memory 1 can use CMOS Silicon Fuse technology which can be polysilicon devices that are programmed using voltage-current-time profiles suitable for the silicon process technology, such that when applied will cause the polysilicon element to heat up rapidly and melt. This results in the fuse element going open circuit, just like blowing a known fuse. The fuse can act as a logic element that has a one time, user programmable and permanent logic state. An array of such memory cells is can be mapped to a sub pixel diode detector array.
    • 描述了包括检测器二极管阵列3和非易失性存储器1的红外检测器系统。非易失性存储器1可以使用CMOS硅保险丝技术,其可以是使用适合于硅的电压 - 电流 - 时间曲线编程的多晶硅器件 使得当应用时将导致多晶硅元件快速升温并熔化。 这导致保险丝元件开路,就像吹一个已知的保险丝。 保险丝可以作为具有一次,用户可编程和永久逻辑状态的逻辑元件。 这种存储器单元的阵列可以被映射到子像素二极管检测器阵列。