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1. 发明授权

US08679889B2 Hybrid polysilicon heterojunction back contact cell 有权
标题翻译：混合多晶异质结接触电池
公开(公告)号：US08679889B2
公开(公告)日：2014-03-25
申请号：US13333908
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
摘要翻译：公开了一种制造高效太阳能电池的方法。该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。镀金属指可以形成第一金属网格线。可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

2. 发明授权

US08597970B2 Hybrid polysilicon heterojunction back contact cell 有权
公开(公告)号：US08597970B2
公开(公告)日：2013-12-03
申请号：US13333904
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

3. 发明申请

US20130164879A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 有权
公开(公告)号：US20130164879A1
公开(公告)日：2013-06-27
申请号：US13333908
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

4. 发明申请

US20130164878A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 有权
公开(公告)号：US20130164878A1
公开(公告)日：2013-06-27
申请号：US13333904
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

5. 发明申请

US20160071996A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 审中-公开
公开(公告)号：US20160071996A1
公开(公告)日：2016-03-10
申请号：US14945708
申请日：2015-11-19
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0747 , H01L31/0236 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

6. 发明申请

US20130247965A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20130247965A1
公开(公告)日：2013-09-26
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

7. 发明申请

US20170012161A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 审中-公开
标题翻译：混合聚苯醚复合接触电池
公开(公告)号：US20170012161A1
公开(公告)日：2017-01-12
申请号：US15269727
申请日：2016-09-19
申请人： Peter J. Cousins , David D. Smith , Seung Bum Rim
发明人： Peter J. Cousins , David D. Smith , Seung Bum Rim
IPC分类号： H01L31/0747 , H01L31/0224 , H01L31/0216 , H01L31/0236 , H01L31/0368
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
摘要翻译：公开了一种制造高效太阳能电池的方法。该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。镀金属指可以形成第一金属网格线。可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

8. 发明授权

US09054255B2 Solar cell having an emitter region with wide bandgap semiconductor material 有权
标题翻译：太阳能电池具有宽带隙半导体材料的发射极区域
公开(公告)号：US09054255B2
公开(公告)日：2015-06-09
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0747 , H01L31/068 , H01L31/072 , H01L31/0745
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

9. 发明授权

US08134217B2 Bypass diode for a solar cell 有权
标题翻译：用于太阳能电池的旁路二极管
公开(公告)号：US08134217B2
公开(公告)日：2012-03-13
申请号：US12967976
申请日：2010-12-14
申请人： Seung Bum Rim , Taeseok Kim , David D. Smith , Peter J. Cousins
发明人： Seung Bum Rim , Taeseok Kim , David D. Smith , Peter J. Cousins
IPC分类号： H01L21/02
CPC分类号： H01L29/861 , H01L31/022441 , H01L31/0443 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.
摘要翻译：描述了用于太阳能电池的旁路二极管。在一个实施例中，用于太阳能电池的旁路二极管包括太阳能电池的衬底。第一导电区域设置在衬底上方，第一导电类型的第一导电区域。第二导电区域设置在第一导电区域上，第二导电区域具有与第一导电类型相反的第二导电类型。

10. 发明申请

US20150243803A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：具有宽带束半导体材料的发射极区域的太阳能电池
公开(公告)号：US20150243803A1
公开(公告)日：2015-08-27
申请号：US14706773
申请日：2015-05-07
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/068
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

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