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1. 发明授权

US07516427B2 Input capacitance characterization method in IP library 失效
标题翻译： IP库中的输入电容表征方法
公开(公告)号：US07516427B2
公开(公告)日：2009-04-07
申请号：US11197820
申请日：2005-08-05
申请人： Peter H. Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
发明人： Peter H. Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A methodology for characterization of an IP (Intellectual Property) component is provided. Digital pins are recognized by skipping analog pins and special IO pins. First two layers of the IP component are classified in response to connection of the input pins. Partial circuits of the IP component are extracted for simulation. Three corners of IP library are generated. Therefore, input capacitance of the IP component is simulated.
摘要翻译：提供了一个用于表征知识产权（知识产权）组件的方法。通过跳过模拟引脚和特殊IO引脚可识别数字引脚。响应于输入引脚的连接，IP组件的前两层被分类。提取IP组件的部分电路进行仿真。生成IP库的三个角落。因此，模拟IP组件的输入电容。

2. 发明申请

US20070033547A1 Input capacitance characterization method in IP library 失效
标题翻译： IP库中的输入电容表征方法
公开(公告)号：US20070033547A1
公开(公告)日：2007-02-08
申请号：US11197820
申请日：2005-08-05
申请人： Peter Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
发明人： Peter Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A methodology for characterization of an IP (Intellectual Property) component is provided. Digital pins are recognized by skipping analog pins and special IO pins. First two layers of the IP component are classified in response to connection of the input pins. Partial circuits of the IP component are extracted for simulation. Three corners of IP library are generated. Therefore, input capacitance of the IP component is simulated.
摘要翻译：提供了一个用于表征知识产权（知识产权）组件的方法。通过跳过模拟引脚和特殊IO引脚可识别数字引脚。响应于输入引脚的连接，将IP组件的前两层分类。提取IP组件的部分电路进行仿真。生成IP库的三个角落。因此，模拟IP组件的输入电容。

3. 发明申请

US20070214438A1 METHOD FOR STATIC POWER CHARACTERIZATION OF AN INTEGRATED CIRCUIT 审中-公开
标题翻译：用于集成电路静态功率表征的方法
公开(公告)号：US20070214438A1
公开(公告)日：2007-09-13
申请号：US11308154
申请日：2006-03-09
申请人： Peter H. Chen Hanping Chen , Jyh-Herng Wang , Chih-Yang Peng , Han-Chi Liu , Hsin-Hung Chen , Kun-Cheng Wu
发明人： Peter H. Chen Hanping Chen , Jyh-Herng Wang , Chih-Yang Peng , Han-Chi Liu , Hsin-Hung Chen , Kun-Cheng Wu
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A method for static power characterization of an analog integrated circuit includes detecting whether each of a plurality of input pins is electrically connected to a specific circuit; selecting a plurality of test benches of the static power characterization according to a number of the input pins electrically connected to the specific circuit; and processing the plurality of selected test benches of the static power characterization.
摘要翻译：一种用于模拟集成电路的静态功率表征的方法包括检测多个输入引脚中的每一个是否电连接到特定电路; 根据电连接到特定电路的输入引脚的数量来选择静态功率表征的多个测试台; 以及处理静态功率表征的多个选定测试台。

4. 发明授权

US08912619B2 Ultra-violet light sensing device and manufacturing method thereof 有权
标题翻译：紫外光检测装置及其制造方法
公开(公告)号：US08912619B2
公开(公告)日：2014-12-16
申请号：US13907437
申请日：2013-05-31
申请人： Han-Chi Liu , Huan-Kun Pan , Eiichi Okamoto
发明人： Han-Chi Liu , Huan-Kun Pan , Eiichi Okamoto
IPC分类号： H01L33/00 , H01L21/00 , H01L31/0248
CPC分类号： H01L31/0248 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.
摘要翻译：本发明提供一种紫外线感测装置。紫外线感测装置包括第一导电型基板，第二导电型区域和第一导电型高密度区域。第一导电型基板包括光入射面。第二导电类型区域设置在第一导电类型基板中并与光入射表面相邻。第一导电型高密度区域设置在第二导电类型区域的下方。本发明还提供另一种紫外线感测装置，其还包括夹在光入射表面和第二导电类型区域之间的第一导电类型的高密度浅区域。本发明还公开了这些紫外线感测装置的制造方法。

5. 发明授权

US08436443B2 Backside depletion for backside illuminated image sensors 有权
标题翻译：背面照明图像传感器的背面耗尽
公开(公告)号：US08436443B2
公开(公告)日：2013-05-07
申请号：US12107199
申请日：2008-04-22
申请人： Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
发明人： Tzu-Hsuan Hsu , Han-Chi Liu , Ching-Chun Wang
IPC分类号： H01L27/146 , H01L31/09
CPC分类号： H01L31/0232 , H01L27/14603 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.
摘要翻译：提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域，耗尽区的深度小于衬底厚度的20％。

6. 发明授权

US08368130B2 Method and device to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和装置
公开(公告)号：US08368130B2
公开(公告)日：2013-02-05
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/0352
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

7. 发明申请

US20120200861A1 OPTICAL DISPLACEMENT DETECTION APPARATUS AND OPTICAL DISPLACEMENT DETECTION METHOD 有权
标题翻译：光学位移检测装置和光学位移检测方法
公开(公告)号：US20120200861A1
公开(公告)日：2012-08-09
申请号：US13445639
申请日：2012-04-12
申请人： Hui-Hsuan Chen , Hsin-Chia Chen , Han-Chi Liu , Ching-Lin Chung , Yen-Min Chang
发明人： Hui-Hsuan Chen , Hsin-Chia Chen , Han-Chi Liu , Ching-Lin Chung , Yen-Min Chang
IPC分类号： G01B11/14
CPC分类号： G01B11/002 , G01S7/4815 , G01S17/58 , G06F3/0317 , G06F3/0354 , G06F3/03543
摘要： The present invention discloses an optical displacement detection apparatus and an optical displacement detection method. The optical displacement detection apparatus comprises: at least two light sources for projecting light of different spectrums to a surface under detection, respectively; an image capturing device for receiving light reflected from the surface under detection and converting it into electronic signals; and a processing control circuit for calculating displacement according to the electronic signals from the image capturing device, wherein the processing control circuit is capable of switching between the light sources.
摘要翻译：本发明公开了一种光学位移检测装置和光学位移检测方法。光学位移检测装置包括：至少两个光源，用于将不同光谱的光分别投射到被检测的表面; 用于接收从被检测表面反射的光并将其转换为电子信号的图像捕获装置; 以及处理控制电路，用于根据来自图像捕获装置的电子信号计算位移，其中处理控制电路能够在光源之间切换。

8. 发明申请

US20110134078A1 Distance-measuring device, 3D image-sensing device, and optical touch system 有权
标题翻译：距离测量装置，3D图像感测装置和光学触摸系统
公开(公告)号：US20110134078A1
公开(公告)日：2011-06-09
申请号：US12817172
申请日：2010-06-16
申请人： En-Feng Hsu , Han-Chi Liu , Chih-Hung Lu , Ming-Tsan Kao
发明人： En-Feng Hsu , Han-Chi Liu , Chih-Hung Lu , Ming-Tsan Kao
IPC分类号： G06F3/042 , G01C3/08 , H04N13/02
CPC分类号： G01C3/08 , G01S7/491 , G01S7/497 , G01S17/08 , G06F3/0428 , H04N13/254
摘要： A distance-measuring device includes a light-emitting/sensing controlling circuit, a light-emitting component, a light-sensing group, a background-calculating circuit, a frequency-adjusting circuit, and a distance-calculating circuit. The light-emitting component emits a detecting light to a measured object. The light-emitting/sensing controlling circuit controls the light-sensing group receiving and accumulating the energy of a reflective light generated by the measured object reflecting the detecting light, so that the distance-calculating circuit can calculate a measured distance between the measured object and the distance-measuring device according the accumulated energy of the light-sensing group. In addition, the distance-measuring device calculates the energy accumulated by the light-sensing group sensing the background light per unit time, by means of the background-calculating circuit. In this way, the effect of the background light is reduced so that the distance-measuring device can more correctly calculate the measured distance.
摘要翻译：测距装置包括发光/感测控制电路，发光组件，感光组，背景计算电路，频率调节电路和距离计算电路。发光部件向测量对象发射检测光。发光/感测控制电路控制感光组接收并累积反射检测光的测量对象产生的反射光的能量，使得距离计算电路可以计算测量对象和所述距离测量装置根据所述感光组的累积能量。此外，距离测量装置通过背景计算电路来计算感测每单位时间的背景光的感光组所累积的能量。以这种方式，减轻了背景光的影响，使得距离测量装置可以更准确地计算测量的距离。

9. 发明申请

US20110133260A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS 有权
标题翻译：减少图像传感器中的暗电流的方法和装置
公开(公告)号：US20110133260A1
公开(公告)日：2011-06-09
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

10. 发明申请

US20100243868A1 METHOD AND APPARATUS OF IMPROVING EFFICIENCY OF AN IMAGE SENSOR 有权
标题翻译：提高图像传感器效率的方法和装置
公开(公告)号：US20100243868A1
公开(公告)日：2010-09-30
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , B32B37/02
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的装置基板。器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。图像传感器还包括形成在器件衬底的前侧上的第一层。第一层具有第一折射率和第一折射率的函数的第一厚度。图像传感器还具有形成在第一层上的第二层。第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

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