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    • 5. 发明授权
    • Buried insulator isolation for solar cell contacts
    • 用于太阳能电池触点的绝缘绝缘体隔离
    • US08367924B2
    • 2013-02-05
    • US12360814
    • 2009-01-27
    • Peter BordenLi Xu
    • Peter BordenLi Xu
    • H01L31/00H01L21/00H01L21/469
    • H01L31/022425H01L31/03682H01L31/062H01L31/1804Y02E10/546Y02E10/547Y02P70/521
    • The present invention relates to methods and apparatuses for providing a buried insulator isolation for solar cell contacts. According to certain aspects, the invention places a buried oxide under the emitter of a polysilicon emitter solar cell. The oxide provides an excellent passivation layer over most of the surface. Holes in the oxide provide contact areas, increasing the current density to enhance efficiency. The oxide isolates the contacts from the substrate, achieving the advantage of a selective emitter structure without requiring deep diffusions. The oxide further enables use of screen printing on advanced shallow emitter cells. Positioning of the grid lines close to the openings also enables use of a very thin emitter to maximize blue response.
    • 本发明涉及用于为太阳能电池触点提供掩埋绝缘体隔离的方法和装置。 根据某些方面,本发明将掩埋氧化物放置在多晶硅发射极太阳能电池的发射极之下。 该氧化物在大部分表面上提供优异的钝化层。 氧化物中的孔提供接触面积,增加电流密度以提高效率。 该氧化物将触点与衬底隔离,实现了选择性发射极结构的优点,而不需要深度扩散。 氧化物还能够在先进的浅发射极电池上使用丝网印刷。 靠近开口的网格线的定位也使得能够使用非常薄的发射器来最大化蓝色响应。
    • 7. 发明申请
    • DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL
    • 改进的快速热氧化物钝化太阳能电池的双重方法
    • US20100210060A1
    • 2010-08-19
    • US12371090
    • 2009-02-13
    • Peter BordenLi Xu
    • Peter BordenLi Xu
    • H01L31/18
    • H01L31/1864Y02E10/50Y02P70/521
    • Embodiments of the invention generally contemplate methods for treating a semiconductor solar cell substrate to reduce the number of undesirable material defects or interface state traps on the surface or within the substrate. These defects can adversely affect the efficiency of the solar cell because electron-hole pairs tend to recombine with the defects and are essentially lost without generating any useful electrical current. In one aspect, a method of forming a solar cell on a semiconductor substrate is provided, comprising doping a front surface of the substrate, applying a passivating layer to the front surface and/or a back surface of the substrate, and annealing the substrate to reduce the interface state trap density (Dit).
    • 本发明的实施方案通常考虑用于处理半导体太阳能电池基板以减少在表面上或在基板内的不期望的材料缺陷或界面状态陷阱的数量的方法。 这些缺陷可能不利地影响太阳能电池的效率,因为电子 - 空穴对倾向于与缺陷重新组合并且基本上损失而不产生任何有用的电流。 一方面,提供一种在半导体基板上形成太阳能电池的方法,包括:对所述基板的前表面进行掺杂,向所述基板的前表面和/或后表面施加钝化层,并将所述基板退火至 降低界面态陷阱密度(Dit)。
    • 8. 发明申请
    • BURIED INSULATOR ISOLATION FOR SOLAR CELL CONTACTS
    • 绝缘绝缘子隔离太阳能电池联系
    • US20100186803A1
    • 2010-07-29
    • US12360814
    • 2009-01-27
    • PETER BORDENLi Xu
    • PETER BORDENLi Xu
    • H01L31/00H01L21/322
    • H01L31/022425H01L31/03682H01L31/062H01L31/1804Y02E10/546Y02E10/547Y02P70/521
    • The present invention relates to methods and apparatuses for providing a buried insulator isolation for solar cell contacts. According to certain aspects, the invention places a buried oxide under the emitter of a polysilicon emitter solar cell. The oxide provides an excellent passivation layer over most of the surface. Holes in the oxide provide contact areas, increasing the current density to enhance efficiency. The oxide isolates the contacts from the substrate, achieving the advantage of a selective emitter structure without requiring deep diffusions. The oxide further enables use of screen printing on advanced shallow emitter cells. Positioning of the grid lines close to the openings also enables use of a very thin emitter to maximize blue response.
    • 本发明涉及用于为太阳能电池触点提供掩埋绝缘体隔离的方法和装置。 根据某些方面,本发明将掩埋氧化物放置在多晶硅发射极太阳能电池的发射极之下。 该氧化物在大部分表面上提供优异的钝化层。 氧化物中的孔提供接触面积,增加电流密度以提高效率。 该氧化物将触点与衬底隔离,实现了选择性发射极结构的优点,而不需要深度扩散。 氧化物还能够在先进的浅发射极电池上使用丝网印刷。 靠近开口的网格线的定位也使得能够使用非常薄的发射器来最大化蓝色响应。