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    • 1. 发明授权
    • RF power amplifier integrated circuit and unit cell
    • 射频功率放大器集成电路和单元
    • US07961052B2
    • 2011-06-14
    • US12589800
    • 2009-10-28
    • Peter BaconRobert BroughtonYang LiJames BonkowskiNeil Calanca
    • Peter BaconRobert BroughtonYang LiJames BonkowskiNeil Calanca
    • H03F3/14
    • H03F3/195H01L27/0207
    • A novel RF power amplifier integrated circuit (PA IC), unit cell, and method for amplifying RF signals are disclosed. One embodiment of a PA IC includes at least two linear arrays comprising transistor device units, and at least one linear array comprising capacitors. The transistor device units include source nodes that are jointly coupled to a source bus, and selected gate nodes that are jointly coupled to a gate bus. First electrodes of the capacitors are also jointly coupled to the source bus, and second electrodes of the capacitors are jointly coupled to the gate bus. Each linear array comprising capacitors is disposed between at least two linear arrays comprising transistor device units. In one embodiment, the PA IC includes unit cells. In some embodiments, each unit cell comprises two transistor device units and one or more capacitors. The capacitors are disposed between the transistor device units. The unit cells are disposed in linear arrays so that the transistor device units are disposed in linear arrays and the capacitors are disposed in linear arrays.
    • 公开了一种用于放大RF信号的新型RF功率放大器集成电路(PA IC),单位电池和方法。 PA IC的一个实施例包括至少两个包括晶体管器件单元的线性阵列和包括电容器的至少一个线性阵列。 晶体管器件单元包括共同耦合到源极总线的源节点和联合耦合到栅极总线的选择的栅极节点。 电容器的第一电极也共同耦合到源极总线,并且电容器的第二电极共同耦合到栅极总线。 包括电容器的每个线性阵列设置在包括晶体管器件单元的至少两个线性阵列之间。 在一个实施例中,PA IC包括单元电池。 在一些实施例中,每个单元单元包括两个晶体管器件单元和一个或多个电容器。 电容器设置在晶体管器件单元之间。 单元电池以线性阵列布置,使得晶体管器件单元被布置成线性阵列,并且电容器被布置成线性阵列。
    • 2. 发明申请
    • RF POWER AMPLIFIER INTEGRATED CIRCUIT AND UNIT CELL
    • 射频功率放大器集成电路和单元电池
    • US20110095824A1
    • 2011-04-28
    • US12589800
    • 2009-10-28
    • Peter BaconRobert BroughtonYang LiJames BonkowskiNeil Calanca
    • Peter BaconRobert BroughtonYang LiJames BonkowskiNeil Calanca
    • H03F3/16
    • H03F3/195H01L27/0207
    • A novel RF power amplifier integrated circuit (PA IC), unit cell, and method for amplifying RF signals are disclosed. One embodiment of a PA IC includes at least two linear arrays comprising transistor device units, and at least one linear array comprising capacitors. The transistor device units include source nodes that are jointly coupled to a source bus, and selected gate nodes that are jointly coupled to a gate bus. First electrodes of the capacitors are also jointly coupled to the source bus, and second electrodes of the capacitors are jointly coupled to the gate bus. Each linear array comprising capacitors is disposed between at least two linear arrays comprising transistor device units. In one embodiment, the PA IC includes unit cells. In some embodiments, each unit cell comprises two transistor device units and one or more capacitors. The capacitors are disposed between the transistor device units. The unit cells are disposed in linear arrays so that the transistor device units are disposed in linear arrays and the capacitors are disposed in linear arrays.
    • 公开了一种用于放大RF信号的新型RF功率放大器集成电路(PA IC),单位电池和方法。 PA IC的一个实施例包括至少两个包括晶体管器件单元的线性阵列和包括电容器的至少一个线性阵列。 晶体管器件单元包括共同耦合到源极总线的源节点和联合耦合到栅极总线的选择的栅极节点。 电容器的第一电极也共同耦合到源极总线,并且电容器的第二电极共同耦合到栅极总线。 包括电容器的每个线性阵列被布置在包括晶体管器件单元的至少两个线性阵列之间。 在一个实施例中,PA IC包括单元电池。 在一些实施例中,每个单元单元包括两个晶体管器件单元和一个或多个电容器。 电容器设置在晶体管器件单元之间。 单元电池以线性阵列布置,使得晶体管器件单元被布置成线性阵列,并且电容器被布置成线性阵列。
    • 3. 发明授权
    • Power ranging transmit RF power amplifier
    • 功率范围发射RF功率放大器
    • US07795968B1
    • 2010-09-14
    • US12319898
    • 2009-01-12
    • Yang LiRobert BroughtonJames BonkowskiPeter Bacon
    • Yang LiRobert BroughtonJames BonkowskiPeter Bacon
    • H03F3/68
    • H03F3/195H03F1/223H03F1/56H03F3/72H03F2203/7233
    • An RF PA operable in two or more selectable power ranges is disclosed. Switches configure the circuit for each range such that an amplifier device corresponding to the range provides final amplification, and all lower power amplifier devices also amplify the signal. An exemplary design includes a low power amplifier configurable for operation solo, or in parallel with a medium power amplifier, to deliver an appropriately matched signal either directly to the RF PA output, or first to the input of a high power amplifier for the highest power range. The signal in all ranges of the exemplary design is conditioned in part by the matching circuitry disposed between the high power amplifier and the RF PA output, which traverses no switches in high power range operation. The entire RF PA, including switches, control and matching circuitry, is fabricated on a single monolithic integrated circuit, an achievement may be facilitated by UTSI CMOS processing.
    • 公开了可操作在两个或更多个可选功率范围内的RFPA。 开关为每个范围配置电路,使得对应于该范围的放大器设备提供最终放大,并且所有较低功率放大器器件也放大信号。 示例性设计包括可配置用于单独操作或与中功率放大器并联的低功率放大器,以将适当匹配的信号直接传送到RF PA输出,或者首先输送到用于最高功率的高功率放大器的输入 范围。 示例性设计的所有范围中的信号部分地由布置在高功率放大器和RF PA输出之间的匹配电路进行调节,其在高功率范围操作中不经过开关。 整个RF PA,包括开关,控制和匹配电路,在单个单片集成电路上制造,UTSI CMOS处理可以促进实现。