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1. 发明授权

US08552535B2 Trench shielding structure for semiconductor device and method 有权
标题翻译：半导体器件的沟槽屏蔽结构及方法
公开(公告)号：US08552535B2
公开(公告)日：2013-10-08
申请号：US12271068
申请日：2008-11-14
申请人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
发明人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
IPC分类号： H01L29/66
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/401 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
摘要翻译：用于半导体器件的屏蔽结构包括多个沟槽。沟槽包括形成在其中的钝化衬垫和屏蔽电极。在一个实施例中，屏蔽结构位于控制板下方。在另一个实施例中，屏蔽结构放置在控制转轮下方。

2. 发明申请

US20100123220A1 TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：用于半导体器件和方法的TRENCH SHIELDING STRUCTURE
公开(公告)号：US20100123220A1
公开(公告)日：2010-05-20
申请号：US12271068
申请日：2008-11-14
申请人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
发明人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
IPC分类号： H01L21/3205 , H01L23/58
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/401 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
摘要翻译：用于半导体器件的屏蔽结构包括多个沟槽。沟槽包括形成在其中的钝化衬垫和屏蔽电极。在一个实施例中，屏蔽结构位于控制板下方。在另一个实施例中，屏蔽结构位于控制转轮下方。

3. 发明申请

US20100123187A1 CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE AND METHOD 有权
标题翻译：具有TRENCH屏蔽电极的半导体器件的接触结构及方法
公开(公告)号：US20100123187A1
公开(公告)日：2010-05-20
申请号：US12271030
申请日：2008-11-14
申请人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
发明人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
摘要翻译：在一个实施例中，具有沟槽屏蔽电极的半导体器件的接触结构包括沟槽结构内的栅电极接触部分和屏蔽电极接触部分。在沟槽结构内部或内部对栅电极和屏蔽电极进行接触。厚的钝化层包围接触部分中的屏蔽电极。

4. 发明申请

US20120326227A1 METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE AND STRUCTURE 有权
标题翻译：制造绝缘栅半导体器件和结构的方法
公开(公告)号：US20120326227A1
公开(公告)日：2012-12-27
申请号：US13170033
申请日：2011-06-27
申请人： Peter A. Burke , Gordon M. Grivna , Balaji Padmanabhan , Prasad Venkatraman
发明人： Peter A. Burke , Gordon M. Grivna , Balaji Padmanabhan , Prasad Venkatraman
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/0869 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/4933 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7827
摘要： In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
摘要翻译：在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。栅电极使用栅极绝缘层与半导体材料隔离。在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。屏蔽绝缘层比栅极绝缘层厚。在另一个实施例中，屏蔽绝缘层具有可变的厚度。

5. 发明授权

US08362548B2 Contact structure for semiconductor device having trench shield electrode and method 有权
标题翻译：具有沟槽屏蔽电极的半导体器件的接触结构及方法
公开(公告)号：US08362548B2
公开(公告)日：2013-01-29
申请号：US12271030
申请日：2008-11-14
申请人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
发明人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
摘要翻译：在一个实施例中，具有沟槽屏蔽电极的半导体器件的接触结构包括沟槽结构内的栅电极接触部分和屏蔽电极接触部分。在沟槽结构内部或内部对栅电极和屏蔽电极进行接触。厚的钝化层包围接触部分中的屏蔽电极。

6. 发明授权

US08889532B2 Method of making an insulated gate semiconductor device and structure 有权
标题翻译：制造绝缘栅半导体器件和结构的方法
公开(公告)号：US08889532B2
公开(公告)日：2014-11-18
申请号：US13170033
申请日：2011-06-27
申请人： Peter A. Burke , Gordon M. Grivna , Balaji Padmanabhan , Prasad Venkatraman
发明人： Peter A. Burke , Gordon M. Grivna , Balaji Padmanabhan , Prasad Venkatraman
IPC分类号： H01L21/36 , H01L21/20 , H01L21/336 , H01L29/66 , H01L29/40 , H01L29/78 , H01L29/739 , H01L29/08 , H01L29/45 , H01L29/417 , H01L29/49 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/0869 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/4933 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7827
摘要： In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
摘要翻译：在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。栅电极使用栅极绝缘层与半导体材料隔离。在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。屏蔽绝缘层比栅极绝缘层厚。在另一个实施例中，屏蔽绝缘层具有可变的厚度。

7. 发明授权

US08648412B1 Trench power field effect transistor device and method 有权
标题翻译：沟槽功率场效应晶体管器件及方法
公开(公告)号：US08648412B1
公开(公告)日：2014-02-11
申请号：US13487479
申请日：2012-06-04
申请人： Peter A. Burke , Agajan Suwhanov , Prasad Venkatraman
发明人： Peter A. Burke , Agajan Suwhanov , Prasad Venkatraman
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7813 , H01L21/26506 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/4933 , H01L29/66727 , H01L29/66734
摘要： In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.
摘要翻译：在一个实施例中，具有受控的，浅的，突然的身体接触区域的沟槽功率场效应晶体管器件的结构。

8. 发明授权

US08685822B2 Semiconductor component and method of manufacture 有权
标题翻译：半导体元件及制造方法
公开(公告)号：US08685822B2
公开(公告)日：2014-04-01
申请号：US13022628
申请日：2011-02-07
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L21/336
CPC分类号： H01L29/66727 , H01L29/407 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
摘要翻译：包括栅电极和屏蔽电极的半导体部件和制造半导体部件的方法。半导体材料具有器件区域，栅极接触区域，端接区域和漏极接触区域。在器件区域中形成一个或多个器件沟槽，并且在边缘端接区域中形成一个或多个端接沟槽。屏蔽电极形成在与它们的地板相邻的器件沟槽的部分中。在器件区域中的沟槽的侧壁上形成栅极电介质材料，并且在屏蔽电极之间形成栅电极并与屏蔽电极电绝缘。器件区域中的沟槽中的栅电极连接到栅极接触区域中的沟槽中的栅电极。器件区域的沟槽中的屏蔽电极与端接区域中的屏蔽电极相连。

9. 发明授权

US07897462B2 Method of manufacturing semiconductor component with gate and shield electrodes in trenches 有权
标题翻译：在沟槽中制造具有栅极和屏蔽电极的半导体部件的方法
公开(公告)号：US07897462B2
公开(公告)日：2011-03-01
申请号：US12271083
申请日：2008-11-14
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L21/336
CPC分类号： H01L29/66727 , H01L29/407 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
摘要翻译：包括栅电极和屏蔽电极的半导体部件和制造半导体部件的方法。半导体材料具有器件区域，栅极接触区域，端接区域和漏极接触区域。在器件区域中形成一个或多个器件沟槽，并且在边缘端接区域中形成一个或多个端接沟槽。屏蔽电极形成在与它们的地板相邻的器件沟槽的部分中。在器件区域中的沟槽的侧壁上形成栅极电介质材料，并且在屏蔽电极之间形成栅电极并与屏蔽电极电绝缘。器件区域中的沟槽中的栅电极连接到栅极接触区域中的沟槽中的栅电极。器件区域的沟槽中的屏蔽电极与端接区域中的屏蔽电极相连。

10. 发明申请

US20100123192A1 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE 有权
公开(公告)号：US20100123192A1
公开(公告)日：2010-05-20
申请号：US12271083
申请日：2008-11-14
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/66727 , H01L29/407 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

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