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1. 发明授权

US08184467B2 Card-like memory unit with separate read/write unit 有权
标题翻译：带有单独读/写单元的卡状存储单元
公开(公告)号：US08184467B2
公开(公告)日：2012-05-22
申请号：US11917571
申请日：2006-06-08
申请人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
发明人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.
摘要翻译：在非易失性电存储器系统中，存储单元和读/写单元被提供为物理上分离的单元。存储器单元基于可以通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料。电极和/或触点被提供在存储器单元中或读/写单元中，并且触点至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储器单元的存储材料可以被偏振成两个可识别的偏振状态。

2. 发明申请

US20080198644A1 Data Storage Device 有权
标题翻译：数据存储设备
公开(公告)号：US20080198644A1
公开(公告)日：2008-08-21
申请号：US11917571
申请日：2006-06-08
申请人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
发明人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

3. 发明授权

US06787825B1 Data storage and processing apparatus, and method for fabricating the same 有权
标题翻译：数据存储和处理装置及其制造方法
公开(公告)号：US06787825B1
公开(公告)日：2004-09-07
申请号：US09463906
申请日：2001-01-02
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
IPC分类号： H01L2980
CPC分类号： H01L21/02686 , G11C5/02 , G11C17/06 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0001 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A data storage/processing apparatus includes ROM and/or WORM and/or REWRITEABLE memory modules and/or processing modules provided as a single main layer or multiple main layers on top of a substrate. Transistors and/or diodes operate the apparatus. In one set of embodiments, at least some of the transistors and/or diodes are provided on or in the substrate. In another set of embodiments, at least some of the layers on the top of the substrate include low-temperature compatible organic materials and/or low temperature compatible processes inorganic films, and the transistors and/or diodes need not be disposed on or in the substrate. In a related fabricating method, the memory and/or processing modules are provided on the substrate by depositing the layers in successive steps under thermal conditions that avoid subjecting an already-deposited, processed underlying layers to static or dynamic temperatures exceeding given stability limits, particularly with regard to organic materials.
摘要翻译：数据存储/处理装置包括在基板顶部上作为单个主层或多个主层提供的ROM和/或WORM和/或REWRITEABLE存储器模块和/或处理模块。晶体管和/或二极管操作该装置。在一组实施例中，晶体管和/或二极管中的至少一些设置在衬底上或衬底中。在另一组实施例中，衬底顶部上的至少一些层包括低温兼容的有机材料和/或低温兼容的无机膜，并且晶体管和/或二极管不需要被置于或基质。在相关制造方法中，存储器和/或处理模块通过在热条件下的连续步骤中沉积层而提供在衬底上，避免了已经沉积的经处理的下层在超过给定稳定极限的静态或动态温度下，特别是关于有机材料。

4. 发明授权

US07352612B2 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US07352612B2
公开(公告)日：2008-04-01
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

5. 发明申请

US20080151609A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20080151609A1
公开(公告)日：2008-06-26
申请号：US12010067
申请日：2008-01-18
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.
摘要翻译：在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

6. 发明授权

US07215565B2 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US07215565B2
公开(公告)日：2007-05-08
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Göran Gustafsson , Mats Johansson , Per Sandström , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson
发明人： Christer Karlsson , Göran Gustafsson , Mats Johansson , Per Sandström , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

7. 发明授权

US07266008B2 Bimodal operation of ferroelectric and electret memory cells and devices 失效
标题翻译：铁电和驻极体存储器单元和器件的双峰操作
公开(公告)号：US07266008B2
公开(公告)日：2007-09-04
申请号：US11105350
申请日：2005-04-14
申请人： Hans Gude Gudesen , Geirr I Leistad , Isak Engquist , Göran Gustafsson
发明人： Hans Gude Gudesen , Geirr I Leistad , Isak Engquist , Göran Gustafsson
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

8. 发明授权

US06937500B2 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
标题翻译：操作驻极体存储装置的铁电体的方法以及这种装置
公开(公告)号：US06937500B2
公开(公告)日：2005-08-30
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Per Sandström , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.
摘要翻译：说明矩阵寻址铁电或驻极体存储器件及其操作方法。该方法包括当读取数据时在存储器中的第一和第二组电极上施加第一多个电压差，以及当刷新或重写数据时施加第二多个电压差。第一和第二多个电压差对应于包括电压脉冲的时间序列的电位电平集合。指示存储器单元响应的变化的至少一个参数用于确定电压脉冲的至少一个校正因子，从而相应地调整脉冲参数。存储器件包括用于确定至少一个参数的装置，与用于确定校正因子的装置连接的校准存储器以及用于调整应用于存储器件中的读和写操作的脉冲参数的控制电路。

9. 发明授权

US07248524B2 Operating temperature optimization in a ferroelectric or electret memory 失效
标题翻译：在铁电或驻极体记忆中的工作温度优化
公开(公告)号：US07248524B2
公开(公告)日：2007-07-24
申请号：US11168375
申请日：2005-06-29
申请人： Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Hans Gude Gudesen
发明人： Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Hans Gude Gudesen
IPC分类号： G11C7/04
CPC分类号： G11C29/021 , G11C11/22 , G11C29/02 , G11C29/028 , G11C2029/5002
摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.
摘要翻译：在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

10. 发明授权

US06541869B1 Scalable data processing apparatus 失效
标题翻译：可扩展数据处理设备
公开(公告)号：US06541869B1
公开(公告)日：2003-04-01
申请号：US09601457
申请日：2000-09-18
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Rolf Magnue Berggren , Bengt Göran Gustafsson , Johan Roger Axel Karlsson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Rolf Magnue Berggren , Bengt Göran Gustafsson , Johan Roger Axel Karlsson
IPC分类号： H01L2348
CPC分类号： G11C11/22 , B82Y10/00 , G11C5/02 , H01L25/0657 , H01L2224/32145 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2225/06572 , H01L2924/3011
摘要： In a scalable data processing apparatus, particularly a data storage apparatus, one or more thin-film devices which form a substantially planar layer comprise a plurality of sublayers of thin film. Two or more thin-film devices are provided as an integrated stack of the substantially planar layers which form the thin-film devices, such that the apparatus thereby forms a stacked configuration. Each thin-film device comprises one or more memory areas which form matrix addressable memories and additionally circuit areas which form electronic thin-film circuitry for controlling, driving and addressing memory cells in one or more memories. Each memory device has an interface to every other thin-film device in the apparatus, said interfaces being realized with communication and signal lines as well as supporting circuitry for processing extending vertically through dedicated interface areas in the thin-film device.
摘要翻译：在可伸缩的数据处理装置，特别是数据存储装置中，形成基本平坦的层的一个或多个薄膜装置包括多个薄膜子层。提供两个或更多个薄膜器件作为形成薄膜器件的基本上平面的层的集成堆叠，使得该器件由此形成堆叠结构。每个薄膜器件包括形成矩阵可寻址存储器的一个或多个存储区域，以及形成用于控制，驱动和寻址一个或多个存储器中的存储器单元的电子薄膜电路的附加电路区域。每个存储器件具有与装置中的每个其它薄膜器件的接口，所述接口通过通信和信号线实现，以及用于通过薄膜器件中的专用接口区垂直延伸的处理的支持电路。

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