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1. 发明授权

US08042319B2 Vacuum packaging system 有权
标题翻译：真空包装系统
公开(公告)号：US08042319B2
公开(公告)日：2011-10-25
申请号：US12469833
申请日：2009-05-21
申请人： Peng Liu , Pi-Jin Chen , Bing-Chu Du , Cai-Lin Guo , Liang Liu , Shou-Shan Fan
发明人： Peng Liu , Pi-Jin Chen , Bing-Chu Du , Cai-Lin Guo , Liang Liu , Shou-Shan Fan
IPC分类号： B65B55/00
CPC分类号： H01J9/46 , H01J9/385 , H01J9/40
摘要： A vacuum packaging system includes a vacuum room, a delivery apparatus, a discharge device, a second heating apparatus. The delivery apparatus transport the pre-packaged container into the vacuum room. The discharge device discharges a sealing material to seal an exhaust through hole of the pre-packaged container. The discharge device includes a vessel configured for containing sealing material, a transport pipeline, a first heating, and a controlling element. The first heating apparatus softens the sealing material into viscous liquid. The second heating apparatus is mounted on the inner wall of the vacuum room between the second hatch and the transport pipeline.
摘要翻译：真空包装系统包括真空室，输送装置，排出装置，第二加热装置。输送装置将预先包装的容器运送到真空室中。排出装置排出密封材料以密封预包装容器的排气通孔。排放装置包括构造成用于容纳密封材料，运输管线，第一加热和控制元件的容器。第一加热装置将密封材料软化成粘性液体。第二加热装置安装在第二舱口与运输管线之间的真空室的内壁上。

2. 发明授权

US07353687B2 Reference leak 有权
标题翻译：参考泄漏
公开(公告)号：US07353687B2
公开(公告)日：2008-04-08
申请号：US11228821
申请日：2005-09-16
申请人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G01F25/00
CPC分类号： G01M3/007
摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译：参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。金属材料选自铜，镍和钼。泄漏层包括限定在其中的多个基本上平行的泄漏通孔。泄漏孔可以是圆柱形孔或多面孔。每个泄漏通孔的长度优选不小于其直径的20倍。每个泄漏通孔的直径通常在10nm至500nm的范围内。每个泄漏通孔的长度通常在100nm至100μm的范围内。参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。泄漏孔具有基本相同的长度和直径。

3. 发明授权

US08087219B2 Vacuum packaging system 有权
标题翻译：真空包装系统
公开(公告)号：US08087219B2
公开(公告)日：2012-01-03
申请号：US12469829
申请日：2009-05-21
申请人： Peng Liu , Pi-Jin Chen , Bing-Chu Du , Cai-Lin Guo , Liang Liu , Shou-Shan Fan
发明人： Peng Liu , Pi-Jin Chen , Bing-Chu Du , Cai-Lin Guo , Liang Liu , Shou-Shan Fan
IPC分类号： B65B31/00
CPC分类号： H01J9/40 , H01J9/385 , H01J9/46
摘要： A vacuum packaging system for packaging a vacuum apparatus includes a first accommodating room, a second container, a vacuum room, a first hatch, a second hatch, a delivery apparatus, a discharge device, and a heating apparatus. The delivery apparatus transports the vacuum apparatus from the first accommodating room to the vacuum room to the second accommodating room. The discharge device discharges a sealing element to seal an exhaust through hole of the vacuum apparatus. The heating apparatus is mounted on the inner wall of the vacuum room between the second hatch and the transport pipeline to heat and soften the sealing element.
摘要翻译：用于包装真空装置的真空包装系统包括第一容纳室，第二容器，真空室，第一舱口，第二舱口，输送装置，排放装置和加热装置。输送装置将真空装置从第一容纳室输送到真空室至第二容纳室。排出装置排出密封元件以密封真空装置的排气通孔。加热装置安装在第二舱口与运输管线之间的真空室的内壁上，以加热和软化密封元件。

4. 发明申请

US20060144120A1 Reference leak 有权
标题翻译：参考泄漏
公开(公告)号：US20060144120A1
公开(公告)日：2006-07-06
申请号：US11228821
申请日：2005-09-16
申请人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G01F25/00
CPC分类号： G01M3/007
摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译：参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。金属材料选自铜，镍和钼。泄漏层包括限定在其中的多个基本上平行的泄漏通孔。泄漏孔可以是圆柱形孔或多面孔。每个泄漏通孔的长度优选不小于其直径的20倍。每个泄漏通孔的直径通常在10nm至500nm的范围内。每个泄漏通孔的长度通常在100nm至100μm的范围内。参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。泄漏孔具有基本相同的长度和直径。

5. 发明申请

US20060143895A1 Process for manufacturing a reference leak 有权
标题翻译：制造参考泄漏的过程
公开(公告)号：US20060143895A1
公开(公告)日：2006-07-06
申请号：US11228967
申请日：2005-09-16
申请人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
发明人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
IPC分类号： B21B1/46
CPC分类号： C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要： A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.
摘要翻译：用于制造参考泄漏的方法包括以下步骤：（a）制备基底; （b）在所述衬底上形成图案化催化剂层，所述图案化催化剂层包含一个或多个催化剂块; （c）通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; （d）在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料，玻璃材料和陶瓷材料之一的泄漏层; 和（e）移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。

6. 发明授权

US08484932B2 Vacuum device and method for packaging same 有权
标题翻译：真空装置及其包装方法
公开(公告)号：US08484932B2
公开(公告)日：2013-07-16
申请号：US12387850
申请日：2009-05-07
申请人： Peng Liu , Pi-jin Chen , Cai-Lin Guo , Bing-chu Du , Liang Liu , Shou-Shan Fan
发明人： Peng Liu , Pi-jin Chen , Cai-Lin Guo , Bing-chu Du , Liang Liu , Shou-Shan Fan
IPC分类号： B65B31/00 , H01J9/385
CPC分类号： H01J9/385 , F16J15/108 , F16J15/14 , H01J9/40
摘要： A method for establishing a vacuum in a container includes the following steps. The container having an exhaust through hole defined therein is provided. A sealing cover including a connecting material located on the periphery of the sealing cover is provided. The sealing cover is spaced from the exhaust through hole for form at least gaps between the sealing cover and the exhaust through hole. A vacuum is established in the container. The connecting material is heated. The sealing cover covers the exhaust through hole and the connecting material is cooled. After that the container is packaged.
摘要翻译：用于在容器中建立真空的方法包括以下步骤。提供了具有限定在其中的排气通孔的容器。提供一种包括位于密封盖周边上的连接材料的密封盖。密封盖与排气通孔间隔开，以形成密封盖和排气通孔之间的至少间隙。在容器中建立真空。连接材料被加热。密封盖覆盖排气通孔，连接材料被冷却。之后，容器被包装。

7. 发明授权

US07757371B2 Process for manufacturing a reference leak 有权
标题翻译：制造参考泄漏的过程
公开(公告)号：US07757371B2
公开(公告)日：2010-07-20
申请号：US11228967
申请日：2005-09-16
申请人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
发明人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
IPC分类号： B21B1/46 , B21B13/22 , B22D11/126 , B22D11/128 , B23P17/00 , B23P25/00
CPC分类号： C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要： A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.
摘要翻译：用于制造参考泄漏的方法包括以下步骤：（a）制备基底; （b）在所述衬底上形成图案化催化剂层，所述图案化催化剂层包含一个或多个催化剂块; （c）通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; （d）在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料，玻璃材料和陶瓷材料之一的泄漏层; 和（e）移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。

8. 发明申请

US20090282781A1 Vacuum device and method for packaging same 有权
标题翻译：真空装置及其包装方法
公开(公告)号：US20090282781A1
公开(公告)日：2009-11-19
申请号：US12387850
申请日：2009-05-07
申请人： Peng Liu , Pi-Jin Chen , Cai-Lin Guo , Bing-Chu Du , Liang Liu , Shou-Shan Fan
发明人： Peng Liu , Pi-Jin Chen , Cai-Lin Guo , Bing-Chu Du , Liang Liu , Shou-Shan Fan
IPC分类号： B65B31/04 , B65D55/00
CPC分类号： H01J9/385 , F16J15/108 , F16J15/14 , H01J9/40
摘要： A method for establishing a vacuum in a container includes the following steps. The container having an exhaust through hole defined therein is provided. A sealing cover including a connecting material located on the periphery of the sealing cover is provided. The sealing cover is spaced from the exhaust through hole for forrn at least gaps between the sealing cover and the exhaust through hole. A vacuum is established in the container. The connecting material is heated. The sealing cover covers the exhaust through hole and the connecting material is cooled. After that the container is packaged.
摘要翻译：用于在容器中建立真空的方法包括以下步骤。提供了具有限定在其中的排气通孔的容器。提供一种包括位于密封盖周边上的连接材料的密封盖。密封盖与排气通孔间隔开，用于至少在密封盖和排气通孔之间的间隙。在容器中建立真空。连接材料被加热。密封盖覆盖排气通孔，连接材料被冷却。之后，容器被包装。

9. 发明授权

US07966787B2 Vacuum device and method for packaging same 有权
标题翻译：真空装置及其包装方法
公开(公告)号：US07966787B2
公开(公告)日：2011-06-28
申请号：US12479944
申请日：2009-06-08
申请人： Cai-Lin Guo , Peng Liu , Pi-Jin Chen , Bing-Chu Du , Liang Liu , Shou-Shan Fan
发明人： Cai-Lin Guo , Peng Liu , Pi-Jin Chen , Bing-Chu Du , Liang Liu , Shou-Shan Fan
IPC分类号： B65B31/00 , H01J9/385 , H01J9/40 , B65D81/20
CPC分类号： H01J5/24 , H01J29/862 , H01J29/94 , H01J2211/48 , H01J2211/54 , H01J2329/867 , H01J2329/941
摘要： A method for packaging the vacuum device includes providing a pre-packaged container having an exhaust through hole defined therein and a sealing element placed into the exhaust through hole, pumping the pre-packaged container to create a vacuum, heating and softening the sealing element to seal the exhaust through hole, and cooling the melted low-melting glass to package the pre-packaged container.
摘要翻译：一种用于包装真空装置的方法包括提供一个具有限定在其中的排气通孔的预先包装的容器和放置在排气通孔中的密封元件，泵送预包装的容器以产生真空，加热和软化密封元件密封排气通孔，并冷却熔融的低熔点玻璃以包装预包装的容器。

10. 发明授权

US08253314B2 Ion source having secondary electron enhancing electrode 有权
标题翻译：具有二次电子增强电极的离子源
公开(公告)号：US08253314B2
公开(公告)日：2012-08-28
申请号：US12959601
申请日：2010-12-03
申请人： Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
发明人： Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
IPC分类号： H01J27/00 , H01J27/02
CPC分类号： H01J31/127 , H01J1/3044 , H01J29/04 , H01J2201/30411 , H01J2329/0415
摘要： An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.
摘要翻译：提供了使用场发射装置的离子源。场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。电子牵引电极位于绝缘基板的表面上。二次电子发射层位于电子牵拉电极的表面上。阴极通过第一介电层与电子牵拉电极分开。阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。电子发射层位于阴极表面并且定向到电子牵引电极。

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