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    • 1. 发明授权
    • Field effect transistor
    • 场效应晶体管
    • US06707120B1
    • 2004-03-16
    • US09097991
    • 1998-06-16
    • Payman AminzadehReza ArghavaniPeter Moon
    • Payman AminzadehReza ArghavaniPeter Moon
    • H01L2976
    • H01L29/6659H01L21/3144H01L29/4983H01L29/6656
    • A method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed. An oxide is grown on the gate electrode. This oxide is strengthened by nitridation and anneal. After a lightly doped drain implant, a second side oxide and a conformal nitride layer are deposited. Then, the conformal nitride is anisotropically etched to form spacers for masking a high dose drain implant. An NMOS transitor fabricated with this process has been found to be forty percent less susceptible to hot carrier damage than a conventional lightly doped drain process. Also, this process has proven to be more manufacturable than one in which the side oxide is nitrided and re-oxidized.
    • 公开了一种制造具有增加的抗热载体损伤的场效应晶体管的方法。 在栅电极上生长氧化物。 该氧化物通过氮化和退火得到加强。 在轻掺杂漏极注入之后,沉积第二侧面氧化物和共形氮化物层。 然后,各向异性蚀刻共形氮化物以形成用于掩蔽高剂量漏极植入物的间隔物。 已经发现用该方法制造的NMOS过渡器比传统的轻掺杂漏极工艺对热载体损伤的敏感性低40%。 此外,该方法已证明比侧氧化物被氮化并再次氧化的方法更可制造。
    • 5. 发明申请
    • Apparatus for an improved air gap interconnect structure
    • 用于改进气隙互连结构的装置
    • US20070284744A1
    • 2007-12-13
    • US11893869
    • 2007-08-15
    • Valery DubinPeter Moon
    • Valery DubinPeter Moon
    • H01L23/528
    • H01L21/76843H01L21/7682H01L21/76849H01L21/7685H01L21/76879H01L23/5222H01L23/5226H01L23/53223H01L23/53238H01L2924/0002H01L2924/00
    • In one embodiment, an apparatus comprises a first layer having at least one interconnect formed in an interlayer dielectric (ILD), a second layer formed over the first layer having a second at least one interconnect, a third layer formed over the second layer, the third layer defining at least one air gap between the second at least one interconnect and the third layer, and at least one shunt selectively covering the first and second at least one interconnects. In another embodiment, a method comprises forming a first layer comprising an ILD and a first at least one interconnect, forming a second layer over the first layer, the second layer having a second at least one interconnect, depositing at least one shunt over the first and second at least one interconnects, forming a third layer over the second layer, and evaporating a portion of the second layer to create at least one air gap between the second at least one interconnect and the third layer.
    • 在一个实施例中,一种装置包括具有在层间电介质(ILD)中形成的至少一个互连的第一层,在第一层上形成的具有第二至少一个互连的第二层,在第二层上形成的第三层, 第三层限定第二至少一个互连和第三层之间的至少一个空气间隙,以及至少一个分流器,其选择性地覆盖第一和第二至少一个互连。 在另一个实施例中,一种方法包括形成包括ILD和第一至少一个互连的第一层,在第一层上形成第二层,第二层具有第二至少一个互连,在第一层上沉积至少一个分流 以及第二至少一个互连,在所述第二层上形成第三层,以及蒸发所述第二层的一部分以在所述第二至少一个互连和所述第三层之间产生至少一个空气间隙。