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    • 6. 发明授权
    • Method of making a field oxide isolation structure
    • 制作场氧化物隔离结构的方法
    • US5696021A
    • 1997-12-09
    • US474537
    • 1995-06-07
    • Tsiu Chiu ChanFrank R. Bryant
    • Tsiu Chiu ChanFrank R. Bryant
    • H01L21/316H01L21/32H01L21/76H01L21/762
    • H01L21/32H01L21/76221
    • A method for creating isolation structures in a substrate without having to increase the field implant doses to prevent punch through. This particular advantage is achieved by first growing a pad oxide on the substrate. Polysilicon is deposited on top of the pad oxide layer. Next, silicon nitride, used for masking, is deposited on the polysilicon layer. An opening, also called an isolation space, is etched into the three layers, exposing part of the substrate. A first field oxide is grown in the opening. This first field oxide layer is etched to expose a portions of the substrate along the edge of the field oxide region. Then, trenches are etched into the exposed portions of the substrate, and field implantation of dopants is performed. After implantation, a second field oxide layer is grown. The silicon nitride, polysilicon, and pad oxide are then removed, resulting in the isolation structure of the present invention.
    • 一种用于在衬底中产生隔离结构而不必增加现场注入剂量以防止穿透的方法。 通过首先在衬底上生长衬垫氧化物来实现这个特别的优点。 多晶硅沉积在衬垫氧化物层的顶部。 接下来,用于掩蔽的氮化硅沉积在多晶硅层上。 还将一个开口(也称为隔离空间)蚀刻到三层中,使基板的一部分露出。 在开口中生长第一场氧化物。 蚀刻第一场氧化物层以沿着场氧化物区域的边缘露出衬底的一部分。 然后,将沟槽蚀刻到衬底的暴露部分中,并进行掺杂剂的场注入。 植入后,生长第二场氧化物层。 然后去除氮化硅,多晶硅和衬垫氧化物,产生本发明的隔离结构。
    • 9. 发明授权
    • Pad oxide protect sealed interface isolation
    • 垫氧化物保护密封接口隔离
    • US5256895A
    • 1993-10-26
    • US863519
    • 1992-03-31
    • Frank R. BryantYu-Pin HanFu-Tai Liou
    • Frank R. BryantYu-Pin HanFu-Tai Liou
    • H01L21/32H01L21/762H01L27/12H01L23/48H01L29/40
    • H01L21/32H01L21/76205
    • Field oxide regions are formed between drive regions of a silicon substrate by forming over the substrate a sandwich of silicon dioxide, silicon nitride and silicon dioxide layers, opening the layers to expose a portion of the silicon substrate, removing a layer of the exposed substrate, forming side wall spacers on the edges of the opening, removing a layer of the silicon substrate exposed between the side wall spacers, and then reaching the exposed substrate for the thermal oxidation of the exposed substrate for forming the field oxide region. In those structures in which the field oxide is buried in the substrate as shown in FIG. 12, it may be feasible to use thicker field oxide regions and thereby to reduce the need for the heavily doped surface layer under the field oxide.
    • 通过在衬底上形成二氧化硅,氮化硅和二氧化硅层的夹层来形成在硅衬底的驱动区之间的场氧化物区域,打开这些层以暴露硅衬底的一部分,去除暴露的衬底的一层, 在开口的边缘上形成侧壁间隔物,去除暴露在侧壁间隔物之间​​的硅衬底层,然后到达暴露的衬底,用于暴露衬底的热氧化以形成场氧化物区域。 在如图1所示的那些场地氧化物埋在衬底中的那些结构中。 如图12所示,可以使用较厚的场氧化物区域,从而减少对场氧化物下的重掺杂表面层的需要。