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1. 发明授权

US08642454B2 Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch 有权
标题翻译：采用循环沉积和蚀刻的硅锗合金的低温选择性外延
公开(公告)号：US08642454B2
公开(公告)日：2014-02-04
申请号：US13475503
申请日：2012-05-18
申请人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
发明人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： H01L21/0262 , C23C16/30 , C23C16/45523 , C30B25/02 , C30B29/52 , H01L21/02532 , H01L21/02573 , H01L21/02636
摘要： Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.
摘要翻译：循环沉积和蚀刻（CDE）选择性外延生长采用采用氯化氢和含锗气体的组合的蚀刻化学法，以在低于625℃的温度下提供硅锗合金的选择性沉积。具有在400℃和550℃之间的温度范围内的锗浓度大于35原子％。具有式SinH2n + 2的高阶硅烷，其中n是大于3的整数，与锗 - 在该温度范围内的每个沉积步骤中，使用含有前体气体来沉积具有厚度均匀性和高沉积速率的硅锗合金。蚀刻化学中含锗气体的存在增强了在蚀刻步骤期间沉积的硅锗合金材料的蚀刻速率。

2. 发明申请

US20130040438A1 EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 审中-公开
标题翻译：首先使用HCl / GeH4 / H2SiCl2表面清洁的外延工艺
公开(公告)号：US20130040438A1
公开(公告)日：2013-02-14
申请号：US13206248
申请日：2011-08-09
申请人： Thomas N. Adam , Hong He , Alexander Reznicek , Devendra K. Sadana , Paul D. Brabant , Keith Chung , Manabu Shinriki
发明人： Thomas N. Adam , Hong He , Alexander Reznicek , Devendra K. Sadana , Paul D. Brabant , Keith Chung , Manabu Shinriki
IPC分类号： H01L21/205 , H01L21/322
CPC分类号： H01L21/0237 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.
摘要翻译：一种沉积外延层的方法，包括化学清洗半导体衬底的沉积表面，并在预烘烤温度下用含氢气体处理半导体衬底的沉积表面。含氢气体处理可以在外延沉积室中进行。含氢气体从半导体衬底的沉积表面去除含氧材料。然后可以用包含至少一种盐酸（HCl），锗烷（GeH4）和二氯硅烷（H 2 SiCl 2））的气流来处理半导体衬底的沉积表面，该气流随着温度从预烘烤温度达到外延沉积温度。可以将至少一种源气体施加到沉积表面，用于材料层的外延沉积。

3. 发明申请

US20130040440A1 EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 审中-公开
公开(公告)号：US20130040440A1
公开(公告)日：2013-02-14
申请号：US13613003
申请日：2012-09-13
申请人： Thomas N. Adam , Hong He , Alexander Reznicek , Devendra K. Sadana , Paul D. Brabant , Keith Chung , Manabu Shinriki
发明人： Thomas N. Adam , Hong He , Alexander Reznicek , Devendra K. Sadana , Paul D. Brabant , Keith Chung , Manabu Shinriki
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.

4. 发明申请

US20120295421A1 LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLOYING CYCLIC DEPOSIT AND ETCH 有权
标题翻译：使用循环沉积和蚀刻的硅锗合金的低温选择性外延
公开(公告)号：US20120295421A1
公开(公告)日：2012-11-22
申请号：US13475503
申请日：2012-05-18
申请人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
发明人： Paul D. Brabant , Keith Chung , Hong He , Devendra K. Sadana , Manabu Shinriki
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/30 , C23C16/45523 , C30B25/02 , C30B29/52 , H01L21/02532 , H01L21/02573 , H01L21/02636
摘要： Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.
摘要翻译：循环沉积和蚀刻（CDE）选择性外延生长采用采用氯化氢和含锗气体的组合的蚀刻化学法，以在低于625℃的温度下提供硅锗合金的选择性沉积。具有在400℃和550℃之间的温度范围内的锗浓度大于35原子％。具有式SinH2n + 2的高阶硅烷，其中n是大于3的整数，与锗 - 在该温度范围内的每个沉积步骤中，使用含有前体气体来沉积具有厚度均匀性和高沉积速率的硅锗合金。蚀刻化学中含锗气体的存在增强了在蚀刻步骤期间沉积的硅锗合金材料的蚀刻速率。

5. 发明授权

US08759200B2 Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material 有权
标题翻译：含Si材料和替代掺杂结晶含Si材料的选择性外延的方法和装置
公开(公告)号：US08759200B2
公开(公告)日：2014-06-24
申请号：US13135031
申请日：2011-06-23
申请人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, Jr. , Hong He , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
发明人： Terry Arthur Francis , Satoshi Hasaka , Paul David Brabant , Robert Torres, Jr. , Hong He , Alexander Reznicek , Thomas N. Adam , Devendra K. Sadana
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要翻译：本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速小于约550℃，压力范围为约10mTorr-200Torr。此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳。

6. 发明申请

US20200037396A1 DOWNLINK CONTROL CHANNEL SIGNALING FOR IMPROVING UE POWER CONSUMPTION 审中-公开
公开(公告)号：US20200037396A1
公开(公告)日：2020-01-30
申请号：US16520522
申请日：2019-07-24
申请人： Toufiqul Islam , Hong He , Qiaoyang Ye , Honglei Miao , Gang Xiong
发明人： Toufiqul Islam , Hong He , Qiaoyang Ye , Honglei Miao , Gang Xiong
IPC分类号： H04W88/06 , H04W88/10 , H04W76/28 , H04W76/27 , H04W72/04 , H04W52/02 , H04W24/08 , H04W80/02 , H04W76/11
摘要： Described herein are methods and apparatus for implementing discontinuous reception (DRX) states in user equipments (UE) in order to conserve battery power. In particular, methods and apparatus for signaling the UE to transition between different DRX states using L1 signaling such as over the physical downlink control channel (PDCCH) are described.

7. 发明申请

US20190222281A1 SIGNALING FOR RESOURCE ALLOCATION AND SCHEDULING IN 5G-NR INTEGRATED ACCESS AND BACKHAUL 审中-公开
公开(公告)号：US20190222281A1
公开(公告)日：2019-07-18
申请号：US16189157
申请日：2018-11-13
申请人： Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
发明人： Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
IPC分类号： H04B7/06 , H04L1/00 , H04W76/27 , H04W72/12
摘要： Embodiments of apparatus and methods for signaling for resource allocation and scheduling in 5G-NR integrated access and backhaul are generally described herein. In some embodiments, User Equipment configured for reporting a channel quality indicator (CQI) index in a channel state information (CSI) reference resource assumes a physical resource block (PRB) bundling size of two PRBs to derive the CQI index.

8. 发明授权

US10164672B2 Selection of acknowledgment timing in wireless communications 有权
公开(公告)号：US10164672B2
公开(公告)日：2018-12-25
申请号：US14440860
申请日：2013-12-03
申请人： Hong He , Seunghee Han , Jong-Kae Fwu , Debdeep Chatterjee , Rui Huang
发明人： Hong He , Seunghee Han , Jong-Kae Fwu , Debdeep Chatterjee , Rui Huang
IPC分类号： H04B1/12 , H04W72/12 , H04B1/3827 , H04W84/18 , H04W92/18 , H04W72/04 , H04L25/03 , H04W76/14 , H04W76/27 , H04W76/28 , H04L5/00 , H04W36/10 , H04W52/40 , H04J11/00 , H04W72/08 , H04W52/02 , H04L1/00 , H04W24/02 , H04L25/02 , H04B7/0452 , H04B7/06 , H04B7/155 , H04L1/18 , H04W24/10 , H04B17/24 , H04B17/26 , H04B17/345 , H04W40/16 , H04W84/04 , H04L27/00
摘要： Disclosed is a User Equipment device configured to select a suitable acknowledgement timing configuration in a time division duplex-frequency division duplex (TDD-FDD) carrier aggregation (CA) enabled wireless network, comprising establishing, by a user equipment (UE), a connection to a primary serving cell (PCell) and a secondary serving cell (SCell) of a base station, the PCell having a first TDD or first FDD configuration, the SCell having a second FDD or second TDD configuration, receiving, by the UE, downlink data through the PCell and SCell, categorizing a type of downlink data subframe in use by the SCell, selecting, by the UE, a hybrid automatic repeat request (HARQ) timing configuration based on the type of downlink data subframe for use by the SCell, and transmitting acknowledgement information associated with the downlink data according to the selected hybrid automatic repeat request (HARQ) timing configuration on PCell. Other embodiments may be described and claimed.

9. 发明申请

US20160219557A1 DEVICES AND METHODS FOR EPDCCH MONITORING IN WIRELESS COMMUNICATION SYSTEMS 审中-公开
标题翻译：无线通信系统中EPDCCH监控的设备和方法
公开(公告)号：US20160219557A1
公开(公告)日：2016-07-28
申请号：US14748802
申请日：2015-06-24
申请人： Hong He , Seunghee Han , Jong-Kae Fwu , Hwan-Joon Kwon
发明人： Hong He , Seunghee Han , Jong-Kae Fwu , Hwan-Joon Kwon
IPC分类号： H04W72/04
CPC分类号： H04W76/28 , H04L5/0007 , H04L5/001 , H04L5/0053 , H04L5/0091 , H04W52/0216 , H04W52/0229 , H04W76/15
摘要： Devices and methods of reducing blind decoding attempts of user equipment (UE) suing carrier aggregation are generally described. The UE may determine at least one subframe in a modification period to monitor for a physical downlink control channel (PDCCH) formed in accordance with a Discontinuous Transmission Downlink Control Information (DTX DCI) format. The DTX DCI format may indicate whether the serving cell is in a DTX or non-DTX state. The UE may determine the DTX state of each serving cell from the DTX DCI format and monitor an enhanced PDCCH of each serving cell in the non-DTX state to provide a scheduling assignment for the UE, without monitoring each serving cell in the DTX state. The UE may receive higher layer signaling that indicates a repetition period and subframe offset for DTX DCI format transmissions or a bitmap of the DTX DCI format transmissions for subframes within each modification period.
摘要翻译：通常描述减少用户设备（UE）对载波聚合的盲解码尝试的设备和方法。 UE可以在修改周期中确定至少一个子帧，以监视根据不连续传输下行链路控制信息（DTX DCI）格式形成的物理下行链路控制信道（PDCCH）。 DTX DCI格式可以指示服务小区是否处于DTX或非DTX状态。 UE可以从DTX DCI格式确定每个服务小区的DTX状态，并且监视非DTX状态下的每个服务小区的增强PDCCH，以便为UE提供调度分配，而不监视DTX状态下的每个服务小区。 UE可以接收指示DTX DCI格式传输的重复周期和子帧偏移的更高层信令，或者在每个修改周期内子帧的DTX DCI格式传输的位图。

10. 发明申请

US20160212734A1 DEVICES AND METHODS FOR HARQ-ACK FEEDBACK SCHEME ON PUSCH IN WIRELESS COMMUNICATION SYSTEMS 有权
标题翻译：在无线通信系统中的PUSCH上的HARQ-ACK反馈方案的装置和方法
公开(公告)号：US20160212734A1
公开(公告)日：2016-07-21
申请号：US14751054
申请日：2015-06-25
申请人： Hong He , Seunghee Han , Hwan-Joon Kwon , Gang Xiong
发明人： Hong He , Seunghee Han , Hwan-Joon Kwon , Gang Xiong
IPC分类号： H04W72/04 , H04L5/00 , H04L1/18
CPC分类号： H04L5/0048 , H04L1/1812 , H04L1/1861 , H04L5/0055
摘要： Devices and methods of reducing overall Hybrid Automatic Repeat Request-Acknowledgment (HARQ-ACK) of user equipment (UE) using a large amount of carrier aggregation are generally described. The UE may receive a subframe from an enhanced NodeB (eNB). The subframe may contain a physical downlink control channel (PDCCH) formed in accordance with a Downlink Control information (DCI) format. The DCI format may comprise a Downlink Assignment Index (DAI) for Time Division Duplexed (TDD) and Frequency Division Duplexed (FDD) operation. The UE may determine, dependent on the DAI, a number and ordering of Hybrid Automatic Repeat Request-Acknowledgment (HARQ-ACK) bits to be transmitted on a Physical Uplink Shared Channel (PUSCH) and subsequently transmit the HARQ-ACK bits.
摘要翻译：通常描述使用大量载波聚合来减少用户设备（UE）的整体混合自动重复请求确认（HARQ-ACK）的装置和方法。 UE可以从增强型节点B（eNB）接收子帧。子帧可以包含根据下行链路控制信息（DCI）格式形成的物理下行链路控制信道（PDCCH）。 DCI格式可以包括用于时分双工（TDD）和频分双工（FDD）操作的下行链路分配索引（DAI）。 UE可以根据DAI确定要在物理上行链路共享信道（PUSCH）上发送的混合自动重传请求确认（HARQ-ACK）比特的数量和顺序，并随后发送HARQ-ACK比特。

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